ON 328 Phi Thy =BRY 39 5g 10-72 >BRY 39 ON 595 Phi Si-N =BD 135 14h 70-126 >BD 135 BD 135 ON 611 Phi Si-N =BF 480 BF 480 >BF 480 ON 796 Phi Si-N =BC 548 >BC 548 BC 548 ON 974 Phi Si-N_ =BU 508 . . 18j TO-3P BU 508 A 18) ~BU 508 ON 1128 Phi Opto Opto-Koppler/Coupler ee ON 4046 Phi Si-N = 2000A, ~BU 508A 5 2000 A,A3 18) BU 508A, BU 908, $ 2000 A ON 4147 Phi Si-N = 2000A, ~BU 508A 2000 A,A3 16) BU 508A, BU 908, 5 2000 A ON 4152 Phi Si-N =S 2000A, =BU 508A S$ 2000 A,A3 16) BU 508A, BU 908, S 2000 A ON 4213 Phi Si-N =BUT 56A BUT 56A 17) >BUT 56A ON 4223 Phi Si-N+Di =BU 508D BU 508D 18) >BU 508D ON 4302 Phi Si-N = 2000A, ~BU 508A 2000 A,A3 16) BU 508A, BU 908, S 2000 A ON 4337 Phi Si-N =BUT 11A BUT 11A 17] >BUT 11A ON 4341 Phi Si-N ~BUT 76A BUT 76A 17] BUT 76A ON 4359 Phi Si-N-Darl+Di =BD 683 BD 683 BD 683 ON 4437 Phi Si-N TV-HA BU 508 A 18) BU 508 ON 4466 Phi Si-N =BUZ 90A BUZ 90A *BUZ 90A ON 4521 Phi MOS-N-FET-e =BUZ 90 BUZ 90 BUZ 90 ON 4542 Phi Si-N =BU 508A ; BU 508,S 2000A_18), 16) BU 508A 00 Si-P =28A1255-0 (SMD-Marking) ce S0T-23 28A1255 OP-07(C,D,E)D Tix OP-IC =0P-07...UG,P: SMD 8-MDIP NJMOP 07..., WA 714LSC OP-07 CUG,CP Tix OP-IC lo-offset(<150uV), #22V, 0,6MHz, 0...+70 8-DIC/DIP NJMOP 07..., WA 714... OP-07 DJG,DP Tix OP-IC lo-offset(<150pV), +22V, 0,6MHz, 0...+70 8-DIC/DIP NJMOP 07..., uA 714... QP-O7 EJGEP Tk OPC lo-ffset(<75yV), +22V, 0,8MHz, 0...+70 8-DIC/DIP NJM 07..., UA 714... _ OP-27(A,B,C)J Mot OP-IC lo-noise, hi-speed, +22V, -55...+125 TO-99 - OP-27(A,B,C)Z Mot OP-IC =OP-27(A,B,C)J: Fig. 8-DIC OP-27(E,F.G)J Mot OP-IC =OP-27(A,B,C)u: -25...485 70-99 QP-27(E,G)P Mot OP-IC =OP-27(A,B,C)u: 0...+70 8-DIP OP-27(E,F,G)Z Mot OP-IC =OP-27(A,B,C)u: -25...485 8-DIC OP-37(A,B,C)J Mot OP-IC lo-noise, hi-speed, +22V, -55...+125 10-99 OP-37(A,B,C)Z Mot OP-IC =OP-37(A,B,C)J: Fig. 8-DIC OP-37(E,F.G)J Mot OP-IC =OP-37(A,B,C)u: -25,..485 T0O-99 OP-37(E,FG)P Mot OP-IC =OP-37(A,B,C)u: 0...+70 8-DIP OP-37(E,FG)Z Mot OP-IC =0P-37(A,B,C)J: -25...485 8-DIC ee OP160, . Opto LED re OR 100 Aeg Diac =U = 28... 36V, Ib<0,1mA, Itsm=2A 31 00-14 BR 100 31 1N5761, N413M, BR 100, D3202Y, DO201YR ORP 60 Opto CdS Foto-Wdst./Resistor be . _ oT Si-N =2804364 (SMD-Marking) 35 SOT-23 2804364 OT Si-N =28C4001 (SMD-Marking) 35 S$OT-23 28C4001 OT Z-Di =SM 6T 2000 (SMD-Marking) 71a(6x4mm} SOD-6 >$M 6T.... or129 EthysDi=BT129 TD FP OOH TE BT 129 WU . 2D =$M 6T 200CA(SMD-Marking) _ 71a(6x4mm) SOD-6 SM 6T.... . _ OVR-121 Org Hybrid-Z-1C = +12V, 30mA : OVR-126 Org Hybrid-Z-IC +12, 200mA - OVR-241 Org Hybrid-Z-IC +24, 30mA . OVR246 Org Hybrid-Z-IC +24V, 200mA : oY Si-P =2SA1255-Y (SMD-Marking} 35 SOT-23 >28A1255 oy Si-N =2803775 (SMD-Marking) 35 SOT-23 28C3775 Ov Si-N =2804005 (SMD-Marking) 35 SOT-23 28C4005 OY 100 Si-Di =OY 101 BY 133 31a >OY 101 OY 101 Aeg Si-Di Rr, Uni, 800V, 0,54 34a DO-13 BY 133 31a BY 127, BY 133, BY 227, 1N4006...07. ++ OY 102 Aeg Si-Di =OY 101: 400V 34a DO-13 BY 133 Sta BY 126, BY 134, BY 226, 1N4004...07. ++ oY 241 Sie Si-Di_____R&, Uni, 800V, 0,454, Ufc 3V(0,45A) 34a DOS BY 198 ata BY 427, BY 123, BY 227, 1N4006...07. 45 OY 1011 Aeg S-Di Rr, Uni, 800/1000V, 0,6A, Uf<1,3V(5A) 34a DO-13 BY 133 31a BY 127, BY 133, BY 227, 1N4007, ++ OY 1011/3 Aeg Si-Di =OY 1011: 1,5A, Uf<1 3V(3A) 3ia DO-13 BY 255 Sta BY 227, BY 255, GP 15M, 1N5399, +4 OY 1011/4 Aeg Si-Di =OY 1011: 0,95 Sta BO-13 BY 133 3ia BY 127, BY 133, BY 227, 1N4007, ++ OY 1021 Aeg Si-Di =OY 1011: 400/600V 34a DO-13 BY 133 31a BY 126, BY 134, BY 226, 1N4006...07, ++ OY 5061 Itt Si-Di P Rr, 100V, 4A(Tc=50} 32a DO-4 BYX 38/300, (BY 229/200, BY 249/300,++)4 OY 5062 Itt Si-Di =OY 5061: 200V 32a DOo-4 BYX 38/300, (BY 229/200, BY 249/300,++)4 OY 5063 Itt Si-Di =0Y 5061: 300V 32a Do-4 BYX 38/300, (BY 229/400, BY 249/600,++)4 OY 5064 Itt Si-Di =OY 5061: 400V 32a DO-4 BYX 38/600, (BY 229/400, BY 249/600,++)4 OY 5065 Itt S-Di =0Y 5061: 500V 32a DO-4 BYX 38/600, (BY 229/600, BY 249/600, ++}4 OY 5066 Itt Si-Di =0Y 5061: 600V 32a DO-4 BYX 38/600, (BY 229/600, BY 249/600, ++)4 oY 5067 it S-Di =O 5061: 700V sea DO BYX 38/900, (BY 229/800)* 072... Z-Di Z-Diode ....V 3ia P P GaAs-N-FET =28K1964 (SMD-Marking) 51 SOT-173 28K1964 PO ; Si-N =BFP90A (Marking) 51 SOT-173 >BFP 90A ee Plo : Sie LIN-IC Aktiver Matrixpunkt/Cross Point TO-100 - Pd C-Di =BB 131 (SMD-Marking) 71(1,7mm} SOD-323 >BB 131 P1 Si-N =BFP 91A (Marking) 51 SOT-193 >BFP 91A P 1(p) Si-N =BFR 92 (SMD-Marking} 35 SOT-23 >BFR 92 Pq Si-N =BFS 42 (SMD-Marking) 35(2mm) SOT-323 >BFS 42 P4 Si-N =D70Y.8T1 (SMD-Marking) 39 SOT-89 >D70Y.8T1 P41 Si-P+R =RT 1P137P (SMD-Marking) 39 SOT-89 RT 1P137P Pt Si-P+R =RT 1P141G (SMD-Marking) 35 SOT-23 >RT 1P141C P1 Si-P+R =RT 1P141M (SMD-Marking) 35(2mm} - SOT-323 >RT 1P141M PO Si-P =S0 2906 (SMD-Marking) 35 SOT-23 SO 2906 P4 N-FET =28K1577-1 (SMD-Marking) 35 SOT-23 28K1577 PiA Si-N =PZT 3904 (SMD-Marking) ~39 SOT-223 PZT 3904 PtA Si-N =PMBT 3904 (SMD-Marking) 35 SOT-23 PMBT 3904 P1A(p1A) Si-N =PXT 3904 (SMD-Marking) 39 SOT-89 PXT 3904 PIA Si-N =PMST 3904 (SMD-Marking) 35(2mm) - SOT-323 >PMST 3904 P1B Si-N =PMBT 2222 (SMD-Marking) 35 S0T-23 PMBT 2222 P1B (p48) Si-N =PXT 2222 (SMD-Marking) 39 SOT-89 >PXT 2222 PiD Si-N =PZTA 42 (SMD-Marking) =39 SOT-223 PZTA 42 P1D Si-N =PMBTA 42 (SMD-Marking) 35 SOT-23 PMBTA 42 P1D (p10) Si-N =PXTA 42 (SMD-Marking) 39 SOT-89 >PXTA 42 PIE Si-N =PZTA 43 (SMD-Marking} =39 SOT-223 PZTA 43 PIE Si-N =PMBTA 43 (SMD-Marking) 35 S0T-23 >PMBTA 43 PIE (pte) Si-N =PXTA 43 (SMD-Marking) 39 SOT-89 >PXTA 43 PIF Si-N =PMBT 5550 (SMD-Marking) 35 SOT-23 PMBT 5550 345