Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 1 Publication Order Number:
MMPQ2222A/D
1
MMPQ2222A
Preferred Device
Quad General Purpose
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCB 75 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current − Continuous IC500 mAdc
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD1.0
8.0
Watts
mW/°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD2.4
19.2
Watts
mW/°C
Operating and Storage
Junction Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SO−16
CASE 751B
STYLE 4
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMPQ2222A SO−16 48 Units/Rail
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
MMPQ2222A
AWLYWW
MMPQ2222A = Specific Device Code
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) V(BR)CEO 40 − − Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0) V(BR)CBO 75 − − Vdc
Emitter−Base Breakdown Voltage
(IB = 10 Adc, IC = 0) V(BR)EBO 5.0
−−
−−
−Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO −
−−
−50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO − − 100 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 100 A, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
hFE 35
50
75
100
40
50
−
−
−
−
−
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) −
−−
−0.3
1.0
Vdc
Base−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) −
−−
−1.2
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT200 350 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 4.5 − pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 17 − pF
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton − 25 − ns
Turn−Off Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) toff − 250 − ns
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
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Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
−2 V < 2 ns
0
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 kΩ
+30 V
200
CS* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
−55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
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Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t′s = ts − 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
f = 1.0 kHz
IC = 50 µA
100 µA
500 µA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current−Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
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Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
−0.5
0
+0.5
COEFFICIENT (mV/ C)
−1.0
−1.5
−2.5
°
RVC for VCE(sat)
RVB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
−2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
MMPQ2222A
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
18
16 9
SEATING
PLANE
F
J
M
RX 45
G
8 PLP
−B−
−A−
M
0.25 (0.010) B S
−T−
D
K
C
16 PL
S
B
M
0.25 (0.010) A S
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A9.80 10.00 0.386 0.393
B3.80 4.00 0.150 0.157
C1.35 1.75 0.054 0.068
D0.35 0.49 0.014 0.019
F0.40 1.25 0.016 0.049
G1.27 BSC 0.050 BSC
J0.19 0.25 0.008 0.009
K0.10 0.25 0.004 0.009
M0 7 0 7
P5.80 6.20 0.229 0.244
R0.25 0.50 0.010 0.019

SO−16
CASE 751B−05
ISSUE J
STYLE 4:
PIN 1. COLLECTOR, DYE #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. COLLECTOR, #3
6. COLLECTOR, #3
7. COLLECTOR, #4
8. COLLECTOR, #4
9. BASE, #4
10. EMITTER, #4
11. BASE, #3
12. EMITTER, #3
13. BASE, #2
14. EMITTER, #2
15. BASE, #1
16. EMITTER, #1
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6 0.050
1.270
0.155
4.0
SOLDERING FOOTPRINT
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MMPQ2222A/D
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