MBR2535CTG, MBR2545CTG SWITCHMODE Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 35 and 45 VOLTS Features * * * * http://onsemi.com Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature These are Pb-Free Devices* Mechanical Characteristics * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds TO-220AB CASE 221A 1 2, 4 3 MARKING DIAGRAM AY WW B25x5G AKA A Y WW B25x5 x G AKA = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Pb-Free Package = Diode Polarity ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 May, 2012 - Rev. 14 1 Package Shipping MBR2535CTG TO-220 (Pb-Free) 50 Units/Rail MBR2545CTG TO-220 (Pb-Free) 50 Units/Rail Publication Order Number: MBR2535CT/D MBR2535CTG, MBR2545CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CTG MBR2545CTG VRRM VRWM VR V Average Rectified Forward Current (Rated VR, TC = 160C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150C) IFRM Non-Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature (Note 1) TJ -65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s ESD Ratings: Machine Model = C Human Body Model = 3B ESD 35 45 A 30 15 A 30 A 150 V > 400 > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient (Note 2) Symbol Value RJC RJA 1.5 50 Unit C/W 2. When mounted using minimum recommended pad size on FR-4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage (Note 3) IF = 15 Amp, TJ = 25C IF = 15 Amp, TJ = 125C IF = 30 Amp, TJ = 25C IF = 30 Amp, TJ = 125C - - - - - 0.50 - 0.65 0.62 0.57 0.82 0.72 V IR Instantaneous Reverse Current (Note 3) Rated dc Voltage, TJ = 25C Rated dc Voltage, TJ = 125C - - - 9.0 0.2 25 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MBR2535CTG, MBR2545CTG 200 100 TJ = 125C 10 150C 1.0 25C 0.1 0 0.2 0.4 0.6 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.8 1.0 1.2 1.4 1.6 1.8 100C 75C 25C 10 0 20 30 50 40 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 44 40 36 32 dc 28 24 SQUARE WAVE 20 16 12 RATED VOLTAGE APPLIED RJC = 1.5C/W 120 130 140 150 160 170 48 RATED VR APPLIED 44 40 36 RJA = 16C/W (With TO-220 Heat Sink) RJA = 60C/W (No Heat Sink) dc 32 28 24 20 16 SQUARE WAVE 12 8.0 dc 4.0 0 SQUARE WAVE 0 180 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 125C VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 48 8.0 4.0 0 TJ = 150C IR , REVERSE CURRENT (mA) 100 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 32 SQUARE WAVE I (RESISTIVELOAD) PK + I 28 AV 24 I (CAPACITATIVELOAD) PK + 5.0 I 20 dc AV 16 10 12 20 8.0 TJ = 125C 4.0 0 0 4.0 8.0 12 16 20 24 28 32 IF, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation http://onsemi.com 3 36 40 180 MBR2535CTG, MBR2545CTG PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F T SEATING PLANE C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J G D N STYLE 6: PIN 1. 2. 3. 4. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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