1. Product profile
1.1 General description
NPN medium power tran sistor series in Surface-Mo unted Device (SMD) plastic p ackages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Two curren t gai n sele ct ion s
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plas tic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
Rev. 8 — 18 October 2011 Product data sheet
Table 1. Product overview
Type number[1] Package PNP complement
Nexperia JEITA JEDEC
BCP68 SOT223 SC-73 - BCP69
BC868 SOT89 SC-62 TO-243 BC869
BC68PA SOT1061 - - BC69PA
Linear voltage regulators Power management
Low-side switches MOSFET drivers
Battery-driven devices Amplifiers
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
ICcollector current - - 2 A
ICM peak collector current single pulse; tp1ms - - 3 A
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 2 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
[1] Pulse test: tp300 s; = 0.02.
2. Pinning information
hFE DC current gain VCE =1V; I
C=500mA [1] 85 - 375
hFE selection -25 VCE =1V; I
C=500mA [1] 160 - 375
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
SOT1061
1base
2emitter
3 collector
132
4
sym016
2, 4
3
1
321
sym042
1
2
3
Transparent top view
12
3
sym021
3
2
1
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 3 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Tabl e 4. Ordering information
Type number[1] Package
Name Description Version
BCP68 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BC868 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads SOT89
BC68PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 20.65 mm SOT1061
Table 5. Marking codes
Type number Marking code
BCP68 BCP68
BCP68-25 BCP68/25
BC868 CAC
BC868-25 CDC
BC68PA AR
BC68-25PA AS
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 4 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 2 A
ICM peak collector current single pulse;
tp1ms -3A
IBbase current - 0.4 A
IBM peak base current single pulse;
tp1ms -0.4A
Ptot total power dissipation Tamb 25 C
BCP68 [1] -0.65W
[2] -1.00W
[3] -1.35W
BC868 [1] -0.50W
[2] -0.95W
[3] -1.35W
BC68PA [1] -0.42W
[2] -0.83W
[3] -1.10W
[4] -0.81W
[5] -1.65W
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 5 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves S OT 10 6 1
Tamb (°C)
–75 17512525 75–25
006aac674
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac675
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 6 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BCP68 [1] --192K/W
[2] --125K/W
[3] --93K/W
BC868 [1] --250K/W
[2] --132K/W
[3] --93K/W
BC68PA [1] --298K/W
[2] --151K/W
[3] --114K/W
[4] --154K/W
[5] --76K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BCP68 - - 16 K/W
BC868 - - 16 K/W
BC68PA - - 20 K/W
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 7 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junc tio n to ambient as a function of pul se duration for SOT223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junc tio n to ambient as a function of pul se duration for SOT223;
typical values
006aac677
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac678
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 8 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junc tio n to ambient as a function of pul se duration for SOT223;
typical values
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac679
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac680
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 9 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac681
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac682
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1
0.2 0.33
0.5 0.75
0.02
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 10 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac683
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac684
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 11 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac685
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac686
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 12 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 13 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =25V; I
E= 0 A - - 100 nA
VCB =25V; I
E=0A;
Tj= 150 C--10A
IEBO emitter-base cut-of f
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =10V
IC=5mA 50 - -
DC curren t ga in VCE =1V
IC=500mA [1] 85 - 375
IC=1 A [1] 60 - -
IC=2 A [1] 40 - -
DC curren t ga in VCE =1V
hFE selection -25 IC=500mA [1] 160 - 375
VCEsat collector-emitter
saturation voltage IC=1A; I
B= 100 mA [1] --0.5V
IC=2A; I
B= 200 mA [1] --0.6V
VBE base-emitter vo ltage VCE =10V; I
C=5mA [1] --0.7V
VCE =1V; I
C=1A [1] --1V
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz -22-pF
fTtransition frequency VCE =5V; I
C=50mA;
f=100MHz 40 170 - MHz
© Nexperia B.V. 2017. All rights reserved
BCP68_BC868_BC68PA All information provided in this document is subject to legal disclaimers. .
Product data sheet Rev. 8 — 18 October 2011 14 of 23
Nexperia BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
VCE =1V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 15. DC current gain as a function of collector
current; typical values Fig 16. Collector current as a function of
collector-emitter voltage; typical values
VCE =1V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 17. Ba se-emitter voltage as a function of collector
current; typical values Fig 18. Collector- em itter saturatio n voltage as a
function of collector current; typical values
006aac694
200
100
300
400
hFE
0
IC (A)
10–4 10110–3 10–1
10–2
(1)
(2)
(3)
VCE (V)
054231
006aac710
0.8
1.6
2.4
IC
(A)
0.0
IB (mA) = 10
9
87
65
4
3
2
1
006aac695
0.4
0.8
1.2
VBE
(V)
0
IC (A)
10–1 104
103
110
2
10
(1)
(2)
(3)
006aac696
10–1
10–2
1
VCEsat
(V)
10–3
IC (mA)
10–1 104
103
110
2
10
(1)
(2)
(3)