DS30058 Rev. 7 - 2 1 of 4 MMBT4403
www.diodes.com ã Diodes Incorporated
MMBT4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available (MMBT4401)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-600 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
C
B
H
G
D
K
E
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K2T
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SPICE MODEL: MMBT4403
DS30058 Rev. 7 - 2 2 of 4 MMBT4403
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO -40 ¾VIC= -100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾VIC= -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -100mA, IC = 0
Collector Cutoff Current ICEX ¾-100 nA VCE = -35V, VEB(OFF) = -0.4V
Base Cutoff Current IBL ¾-100 nA VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
30
60
100
100
20
¾
¾
¾
300
¾
¾
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -150mA, VCE = -2.0V
IC = -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.40
-0.75 VIC= -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) -0.75
¾
-0.95
-1.30 VIC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾8.5 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ¾30 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.5 15 kW
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 60 500 ¾
Output Admittance hoe 1.0 100 mS
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -10V, IC = -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾15 ns VCC = -30V, IC = -150mA,
VBE(off) = -2.0V, IB1 = -15mA
Rise Time tr¾20 ns
Storage Time ts¾225 ns VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K2T = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2T
YM
Marking Information
Device Packaging Shipping
MMBT4403-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 4)
Note: 3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4403-7-F.
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30058 Rev. 7 - 2 3 of 4 MMBT4403
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0.1 110 100
V , BASE EMITTER V
O
LTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Base-Emitter Voltage
vs. Collector Current
T = 25°C
A
T = -50°C
A
V=5V
CE
T = 150°C
A
0.2
0.3
0.4
0.5
0.9
0.8
0.7
0.6
1.0
110 100 1000
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Collector Emitter Saturation Voltage
vs. Collector Current
T= 25°C
A
T= 50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
IC
IB
= 10
I ,BASE CURRENT (mA)
B
Fig. 2 Typical Collector Saturation Region
V,C
O
LLECT
O
R-EMITTER V
O
LTAGE (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I=1mA
C
I=10mA
C
I=30mA
C
I = 100mA
CI = 300mA
C
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
CAPACITANCE (pF)
REVERSE VOLTS (V)
Fig.1 TypicalCapacitance
Cobo
Cibo
DS30058 Rev. 7 - 2 4 of 4 MMBT4403
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1
100
1000
110 100 1000
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 5 DC Current Gain vs. Collector Current
10
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
100
1000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fi
g
.
6
Ga
in B
a
n
d
wi
dt
h Pr
oduct
v
s
.
Co
ll
ecto
r
Cu
rr
e
n
t
10
V = 5V
CE
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
