SIEMENS PNP Silicon AF Transistors BCW 67 BCW 68 @ For general AF applications @ High current gain @ Low coilector-emitter saturation voltage @ Complementary types: BCW 65, BCW 66 (NPN) VPSOS161 Type Marking Ordering Code Pin Configuration | Package) (tape and reef) 1 2 3 BCW 67 A DAs Q62702-C 1560 B E C | SOT-23 BCW 67 B DBs Q62702-C 1480 BCW 67 C DCs Q62702-C 1681 BCW 68 F DFs Q62702-C1893 BCW 68G DGs Q62702-C1322 BCW 68 H DHs Q62702-C1555 1) For detailed information see chapter Package Outlines. Semiconductor Group 875 5.91SIEMENS BCW 67 BCW 68 Maximum Ratings Parameter Symbol Vatues Unit BCW 67 BCW 68 Collector-emitter voltage Vee 32 45 Vv Collector-base voltage Vcpo 45 60 Emitter-base voltage Vepo 5 5 Collector current Ic 800 mA Peak collector current Tom 1 A Base current Is 100 mA Peak base current Tem 200 Total power dissipation, Ts = 79 C | Pict 330 mW Junction temperature Tj 150 C Storage temperature range Tstg - 68... + 150 Thermal Resistance Junction - ambient) Rtn Ja < 285 KW Junction - soldering point RinJs <215 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mnv6 em? Cu. Semiconductor Group 876SIEMENS BCW 67 BCW 68 Electrical Characteristics at Ta = 25 "GC, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vipryceo Vv Ic=10mA BCW 67 32 - - BCW 68 45 ~ - Collector-base breakdown voltage Viprycao Ic=10pA BCW 67 45 ~ _ BCW 68 60 - - Emitter-base breakdown voltage, Je = 10 pA Verena =| 5 - ~ Collector cutoff current Ice Vee = 32 V BCW 67 - - 20 nA Vea = 45 V BCW 68 - - 20 nA Vee = 32 V, Ta= 150C BCW 67 - - 20 pA Vee = 45 V, Ta = 150C BCW 68 - - 20 pA Emitter-base cutoff current, Ves = 4 V Tea - ~- 20 nA DC current gain hee - Ie = 100 pA, Vee = 10V BCW 67 A, BCW 68 F 35 - - BCW 67 B, BCW 68G 50 - - BCW 67 C, BCW 68H 80 ~ - Ie=10mA, Vee=1V BCW 67 A, BCW 68 F 75 - ~ BCW 67 B, BCW 68G 120 |- - BCW 67 C, BCW 68H 180 - - Ic = 100 mA, Vee= 1 V BCW 67 A, BCW 68 F 100 160 250 BCW 67 B, BCW 68G 160 250 400 BCW 67 C, BCW 68H 250 350 630 Ic = 500 mA, Vce = 2 V BCW 67 A, BCW 68 F 35 - - BCW 67 B, BCW 68G 60 ~ ~ BCW 67 C, BCW 68H 100 - - 1 Pulse test: rs 300 us, D = 2%. Semiconductor GroupSIEMENS BCW 67 BCW 68 Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter Symbol Unit DC characteristics Collector-emitter saturation voltage") Ie =100 mA, Ip =10mMA Ic = 500 mA, Is = 50 mA Veesat Base-emitter saturation voltage") Ic = 100 mA, Je = 10 MA Ic = 500 mA, Je = 50 mA Veesat AC characteristics Transition frequency Ic =50 MA, Vee = 5 V, f= 20 MHz MHz Output capacitance Vea = 10 V, f= 1 MHz Cobo pF Input capacitance Vee = 0.5 V, f= 1 MHz Coo 1D Pulse test: 1< 300 ps, D= 2%. Semiconductor Group 878SIEMENS BCW 67 BCW 68 Total power dissipation Pia = f (Ta*; Ts) Transition frequency ft = f (/c) * Package mounted on epoxy Vee=5V 400 rT 67/68 EHPO0397 1 03 BCW 6? EHPO0398 MHz Pret mW i 5 \ T WIN 300 \ \ | N \ 200 A i 10? aN N 5 100 0 10! 0 50 100 C 150 10 5 10! 5 102 ma 103 e Ak i Permissible pulse load Pict max/Ptot oc = f (tp) Cw 67/68 105 Ae Prat max 5 Prot oe 10 5 10" 5 1 evil! Hil Ht CU 1 Nw AT ge L | Ac TAN, 108 103 1074 103 10? 510 > fy Semiconductor Group Collector cutoff current Iceo = f (Ta) Ves = Vcemex 4195 2 67, nA !ep0 104 | 5 103 5 0 50 100 ~ Ty C 150 879SIEMENS BCW 67 BCW 68 Base-emitter saturation voltage Ic = f (Vecsat) hre = 10 103 Bw EHPO040 mA 1 25C 10? ~50C 5 10! 5 3 Yee sat v DC current gain re = f (Ic) Vee=1V 103 BCw_67 EHPOO403 5 Fre 100 10! 1 o 107! 5 10? > |, 510 510! mA 103 Semiconductor Group 880 Collector-emitter saturation voltage Ic = f (Vcesa) hre = 10 193 Bove EHPQ0402 mA 400 600 mv 800 Yer xt