UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-051,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* High Voltage: BC556, VCEO=-65V
TO-92
1
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage
: BC556
: BC557
: BC558
VCBO
-80
-50
-30
V
V
V
Collector-emitter voltage
: BC556
: BC557
: BC558
VCEO
-65
-45
-30
V
V
V
Emitter-base voltage VEBO -5 V
Collector current (DC) Ic -100 mA
Collector dissipation Pc 500 mW
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 -15 nA
DC current gain hFE VCE=-5V, Ic=2mA 110 800
Collector-emitter saturation voltage VCE(sat) Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
-90
-250
-300
-650
mV
mV
Base-emitter saturation voltage VBE(sat) Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
-700
-900
mV
Base-emitter on voltage VBE(on) VCE=-5V, Ic=-2mA
VCE=-5V, Ic=-10mA
-600 -660 -750
-800
mV
mV
Current gain bandwidth product fT VCE=-5V, Ic=-10mA, f=10MHz 150 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 6 pF