BAV70 BAV70 Surface Mount Small Signal Double-Diodes Kleinsignal-Doppel-Dioden fur die Oberflachenmontage Version 2005-9-28 1.1 2.9 0.1 0.4 1 1.30.1 2.5 max 3 Type Code Power dissipation - Verlustleistung 310 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 70 V Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.9 Dimensions - Mae [mm] 1 = A1 2 = A2 3 = C1/C2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) per diode / pro Diode BAV70 Power dissipation - Verlustleistung 1) Ptot 310 mW 2) Max. average forward current (dc) Dauergrenzstrom IFAV 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom IFRM 300 mA 2) IFSM IFSM IFSM 0.5 A 1A 2A VRRM 70 V Tj TS -55...+150C -55...+150C Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s tp 1 ms tp 1 s Repetitive peak reverse voltage Periodische Spitzensperrspannung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Forward voltage Durchlass-Spannung Leakage current 3) Sperrstrom 1 2 3 IF IF IF IF = = = = 1 mA 10 mA 50 mA 150 mA VF VF VF VF < 715 mV < 855 mV < 1.0 V < 1.25 V Tj = 25C VR = 25 V IR < 5 A Tj = 150C VR = 25 V VR = 70 V IR IR < 60 A < 100 A Total power dissipation of both diodes - Summe der Verlustleistungen beider Dioden Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BAV70 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz CT 1.5 pF Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA trr < 6 ns RthA < 420 K/W 1) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Pinning - Anschlussbelegung 3 1 Marking - Stempelung Double diode, common cathode Doppeldiode, gemeinsame Kathode 1 = A1 2 2 = A2 BAV70 = A4 3 = C1/C2 10 120 [%] [A] 100 1 80 Tj = 125C 60 10-1 40 Tj = 25C -2 10 20 IF IFAV 0 0 TA 50 100 150 [C] 10-3 Rated forward current versus ambient temperature ) 1 Zul. Richtstrom in Abh. von der Umgebungstemp. ) 1 1 2 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG