SEMICONDUCTOR TIP32C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES *Complementary to TIP31C. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse ICP -5 IB -1 A 2 W 40 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Ta=25 Dissipation Tc=25 PC Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.3 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -200 A Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -1 mA VCE=-4V, IC=-1A 25 - - DC Current Gain hFE VCE=-4V, IC=-3A 10 - 50 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-375mA - - -1.2 V Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-3A - - -1.8 V 3.0 - - MHz fT Transition Frequency 1997. 8. 13 Revision No : 0 VCE=-10V, IC=-500mA f=1MHz 1/2 TIP32C 1997. 8. 13 Revision No : 0 2/2