BYG23T-M3/TR3 - Vishay Presicion Group

BYG23T

www.vishay.com Vishay General Semiconductor

Revision: 13-Oct-11 1Document Number: 89429

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Voltage Ultrafast Avalanche SMD Rectifiers

TYPICAL APPLICATIONS

For use in high voltage, high frequency rectification specially

suited for freewheeling, clamping, snubbering in power

supply, ignition drive of HID, UHP and industrial ballast and

snubber for PDP TV power supply application.

FEATURES

• Glass passivated junction

• Low profile package

• Ideal for automated placement

• Low reverse current

• High reverse voltage

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

•Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

Note

• Free air, mounted on recommended copper pad area

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 1300 V

IFSM 18 A

trr 75 ns

ER5 mJ

VF at IF = 1.0 A (TA = 125 °C) 1.39 V

TJ max. 150 °C

DO-214AC (SMA)

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYG23T UNIT

Device marking code BYG23T

Maximum repetitive peak reverse voltage VRRM 1300 V

Maximum DC forward current (fig.1) IF (1) 1.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 18 A

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C ER5mJ

Maximum operating junction temperature TJ150 °C

Storage temperature range TSTG - 55 to + 150 °C

BYG23T

www.vishay.com Vishay General Semiconductor

Revision: 13-Oct-11 2Document Number: 89429

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

Note

(1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount.

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Instantaneous forward voltage (1) IF = 1.0 A TA = 25 °C VF

1.74 1.9 V

TA = 125 °C 1.39 1.65

Reverse current (2) VR = 1300 V TA = 25 °C IR

-5.0

μA

TA = 125 °C 2.9 50

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 25 °C trr 65 75 ns

Forward recovery time IF = 1.5 A, dI/dt = 12 A/μs,

VF = 1.1 x VF max. TA = 25 °C tfr 620 -

Peak forward voltage VFP 9.0 - V

Typical junction capacitance 4.0 V, 1 MHz CJ9.0 - pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYG23T UNIT

Typical thermal resistance (1) RJA 120 °C/W

RJM 20

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE

BYG23T-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel

BYG23T-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel

0.2

0.4

0.6

0.8

1.0

1.2

1007550250 125 150 175

- Mount Temperature (°C)

DC Forward Current (A)

TM - Measured

at the Lead terminal

2.0

0.8

0.6

0.4

0.2

00.20.1 0.4 0.5

0.3 0.6 0.7 0.8 0.9 1.0 1.1

Average Forward Current (A)

Average Power Loss (W)

1.8

1.6

1.4

1.2

1.0

1.2

D = t

/T t

D = 0.1

D = 0.2

D = 0.3

D = 0.5 D = 0.8

D = 1.0

BYG23T

www.vishay.com Vishay General Semiconductor

Revision: 13-Oct-11 3Document Number: 89429

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TA = 150 °C

TA = 125 °C

TA = 25 °C

100

10 20 30 40 50 60 70 9080 100

0.1

0.01

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (mA)

TA = 150 °C

TA = 125 °C

TA = 25 °C

100

0.1 1 10 100

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vstg = 50 mVp-p

1000

100

0.10.01 1 10 100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Ambient

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)

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Revision: 02-Oct-12 1Document Number: 91000

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