SFH 4211
GaAs-IR-Lumineszenzdiode in SMT-Gehäuse
GaAs Infrared Emitter in SMT Package
2001-02-22 1
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Gute Linearität (Ie = f [IF]) bei hohen Strömen
• Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
• Hohe Zuverlässigkeit
• Hohe Impulsbelastbarkeit
• Oberflächenmontage geeignet
• Gegurtet lieferbar
• SFH 4211 Gehäusegleich mit SFH 320
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 4211 Q62702-P1825
Kathodenkennzeic hnung: abgese t zte Ecke
cathode marking: bevelled edge
TOPLED®
Features
•Very highly efficient GaAs-LED
•Good Linearity (Ie = f [IF]) at high currents
•DC (with modulation) or pulsed operations are
possible
•High reliability
•High pulse handling capability
•Suitable for surface mounting (SMT)
•Available on tape and reel
•SFH 4211 same package as SFH 320
Applications
•Miniature photointerrupters
•Industrial electronics
•For drive and control circuits
•Automotive technology
•Sensor technology
•Alarm and safety equipment
•IR free air transmission
2001-02-22 2
SFH 4211
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF100 mA
Stoßstrom, τ = 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 160 mW
Wärmewiderstand Sperrs chicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
∆λ 55 nm
Abstrahlwinkel
Half angle ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.3 ×0.3 mm
SFH 4211
2001-02-22 3
Schaltzeiten, Ιe von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf0.5 µs
Kapazität,
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.3 (≤ 1.5)
1.9 (≤ 2.5) V
V
Sperrstrom,
Reverse current
VR = 5 V
IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe20 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.55 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-02-22 4
SFH 4211
Radiation Characteristics
Srel = f (ϕ)
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie>2.5 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 45 mW/sr
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚ OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
SFH 4211
2001-02-22 5
Relati ve Sp ectral Emi ssi o n
Irel = f (λ)
Forward Curren t
IF = f (VF), single pulse, tp = 20 µs
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
10
OHR01554
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
Radiant Intensity
Single pulse , tp = 20 µs
Max. Permissible Forward Current
IF = f (TA)
Ιe
Ιe 100 mA = f (IF)
OHR01551
10
-3
Ι
F
-2
10
10
-1
10
0
10
1
10
2
Ι
e 100 mA
e
Ι
-2
10
-1
10
0
10
1
10A
A
OHR00883
0
F
I
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
Permissible Pulse Handling
Capability IF = f (tp), duty cycle
D= parameter, TA = 20 °C
t
OHR00860
p
-5
10
10 2
Ι
F
10 3
10 4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
tp
T
Ι
F
tp
T
D=
5
mA
-4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10s
D=
2001-02-22 6
SFH 4211
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / D im ensions are s pecified as follo w s: mm (inch).
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
SFH 4211
2001-02-22 7
Zusätzliche Informationen über allgem eine Lötbedingungen erhalten S ie auf Anf rage.
For additional information on general soldering conditions please contact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured char ac te ris tic s .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail, it is reaso nable to assume that the health of the user m ay be enda ngered.
Löthinweise
Soldering Conditions
Bauform
Types Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering Reflowlötung
Reflow Soldering
Lötbad-
temperatur
Temperature
of the
Soldering Bath
Maximal
zulässige
Lötzeit
Max. Perm.
Soldering Time
Abstand
Lötstelle –
Gehäuse
Distance
between
Solder Joint
and Case
Lötzonen-
temperatur
Temperature
of Soldering
Zone
Maximale
Durchlaufzeit
Max. Transit
Time
TOPLED®260 °C 10 s –245 °C10s
