VS-50WQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK (TO-252AA) * Low forward voltage drop * Guard ring for enhanced ruggedness and long term reliability 3 Anode * Halogen-free according to IEC 61249-2-21 definition * Popular D-PAK outline * Small foot print, surface mountable * High frequency operation PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 5.5 A VR 30 V VF at IF See Electrical table * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC IRM 58 mA at 125 C TJ max. 150 C Diode variation Single die EAS 10 mJ DESCRIPTION The VS-50WQ03FN-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform CHARACTERISTICS 5.5 A 30 V IFSM tp = 5 s sine 320 A VF 5 Apk, TJ = 125 C TJ Range IF(AV) VRRM 0.35 V - 40 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-50WQ03FN-M3 UNITS 30 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 5.5 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 2 A, L = 5 mH 10 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A Repetitive avalanche current Document Number: 93311 Revision: 03-Nov-10 50 % duty cycle at TC = 136 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 320 A 130 www.vishay.com 1 VS-50WQ03FN-M3 Schottky Rectifier, 5.5 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 5A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 10 A 5A TJ = 125 C 10 A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 125 C TJ = TJ maximum VALUES UNITS 0.46 0.53 V 0.35 0.46 3 mA 58 0.19 V 22.22 m Forward slope resistance rt Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 590 pF Typical series inductance LS Measured lead to lead 5 mm from package body 5.0 nH VALUES UNITS - 40 to 150 C 3.0 C/W Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 0.3 g 0.01 oz. 50WQ03FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93311 Revision: 03-Nov-10 VS-50WQ03FN-M3 100 Vishay Semiconductors 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 5.5 A 10 TJ = 150 C TJ = 125 C TJ = 25 C TJ = 150 C 100 TJ = 125 C 10 TJ = 100 C 1.0 TJ = 75 C 0.1 TJ = 50 C 0.01 TJ = 25 C 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t2 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93311 Revision: 03-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-50WQ03FN-M3 Schottky Rectifier, 5.5 A 150 3.5 145 3.0 DC Average Power Loss (W) Allowable Case Temperature (C) Vishay Semiconductors 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 2.5 2.0 RMS limit 1.5 DC 1.0 0.5 See note (1) 120 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93311 Revision: 03-Nov-10 VS-50WQ03FN-M3 Schottky Rectifier, 5.5 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 50 W Q 03 FN 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (5.5 A) 3 - Package identifier: TRL -M3 7 8 W = D-PAK 4 - Schottky "Q" series 5 - Voltage rating (03 = 30 V) 6 - FN = TO-252AA (D-PAK) 7 - None = Tube TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-50WQ03FN-M3 75 3000 Antistatic plastic tube VS-50WQ03FNTR-M3 2000 2000 13" diameter reel VS-50WQ03FNTRL-M3 3000 3000 13" diameter reel VS-50WQ03FNTRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 Document Number: 93311 Revision: 03-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) O1 4 O2 4 B Seating plane H D (5) 1 2 3 (2) L5 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail "C" Rotated 90 CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL 2 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail "C" 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 MILLIMETERS INCHES C Seating plane C O L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 1.40 1.78 0.055 0.070 2.29 BSC MIN. MAX. 0.090 BSC b 0.64 0.89 0.025 0.035 L b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.74 BSC L2 0.51 BSC NOTES 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 O 0 10 0 10 E 6.35 6.73 0.250 0.265 5 O1 0 15 0 15 E1 4.32 - 0.170 - 3 O2 25 35 25 35 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Revision: 05-Dec-12 Document Number: 95016 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000