2N5302 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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

. . . for use in power amplifier and switching circuits applications.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)

•Excellent Safe Operating Area —

200 Watt dc Power Rating to 30 Vdc (2N5303)

•Complements to PNP 2N4398, 2N4399 and 2N5745

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N5301

ÎÎÎÎ

2N5302

ÎÎÎ

2N5303

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

7.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

200

1.14

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

0.875

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Case to Ambient

ÎÎÎÎÎ

θCA

ÎÎÎÎÎÎ

ÎÎÎ

C/W

*Indicates JEDEC Registered Data.

200

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power Temperature Derating Curve

TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

150

100

8.0

6.0

4.0

2.0



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5301/D

 Motorola, Inc. 1995







20 AND 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40–60–80 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

  

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Note 1)

(IC = 200 mAdc, IB = 0) 2N5301

2N5302

2N5303

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N5301

(VCE = 60 Vdc, IB = 0) 2N5302

(VCE = 80 Vdc, IB = 0) 2N5303

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5301

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5302

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5303

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150

C) 2N5301

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150

C) 2N5302

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150

C) 2N5303

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0) 2N5301

(VCB = 80 Vdc, IE = 0) 2N5302

(VCB = 80 Vdc, IE = 0) 2N5303

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 1)

*(IC = 1.0 Adc, VCE = 2.0 Vdc) ALL TYPES

*(IC = 10 Adc, VCE = 2.0 Vdc) 2N5303

*(IC = 15 Adc, VCE = 2.0 Vdc) 2N5301, 2N5302

*(IC = 20 Adc, VCE = 4.0 Vdc) 2N5303

*(IC = 30 Adc, VCE = 4.0 Vdc) 2N5301, 2N5302

ÎÎÎÎ

hFE

ÎÎÎÎ

5.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector–Emitter Saturation Voltage (Note 1)

(IC = 10 Adc, IB = 1.0 Adc) 2N5301, 2N5302

(IC = 10 Adc, IB = 1.0 Adc) 2N5303

(IC = 15 Adc, IB = 1.5 Adc) 2N5303

(IC = 20 Adc, IB = 2.0 Adc) 2N5301, 2N5302

(IC = 20 Adc, IB = 4.0 Adc) 2N5303

(IC = 30 Adc, IB = 6.0 Adc) 2N5301, 2N5302

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.75

1.0

1.5

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Base Emitter Saturation Voltage (Note 1)

(IC = 10 Adc, IB = 1.0 Adc) ALL TYPES

(IC = 15 Adc, IB = 1.5 Adc) 2N5301, 2N5302

(IC = 15 Adc, IB = 1.5 Adc) 2N5303

(IC = 20 Adc, IB = 2.0 Adc) 2N5301, 2N5302

(IC = 20 Adc, IB = 4.0 Adc) 2N5303

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.7

1.8

2.0

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Base–Emitter On Voltage (Note 1)

(IC = 10 Adc, VCE = 2.0 Vdc) 2N5303

(IC = 15 Adc, VCE = 2.0 Vdc) 2N5301, 2N5302

(IC = 20 Adc, VCE = 4.0 Vdc) 2N5303

(IC = 30 Adc, VCE = 4.0 Vdc) 2N5301, 2N5302

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

1.7

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

Note 1: Pulse Width

300 µs, Duty Cycle

2.0%.

  

Motorola Bipolar Power Transistor Device Data

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Figure 2. Turn–On time

INPUT PULSE

≤

20 ns

PW = 10 to 100

DUTY CYCLE = 2.0%

+11 V

–2.0 V

VCC+30 V

3.0

SCOPE

≤

20 ns

Figure 3. Turn–Off time

INPUT PULSE

≤

20 ns

PW = 10 to 100

DUTY CYCLE = 2.0%

+11 V

–9.0 V

VCC+30 V

3.0

SCOPE

≤

20 ns

VBB = 7.0 V

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.03

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 2000500

JC(t) = r(t)

JC = 0.875

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

100

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 100

Secondary Breakdown Limited

Bonding Wire Limited

Thermal Limitations

Pulse Duty Cycle

≤

10%

0.2

IC, COLLECTOR CURRENT (AMP)

2N5303

TJ = 200

2N5301, 5302

100

1.0 ms

5.0 ms

Figure 6. Capacitance versus Voltage

3000

0.5 VR, REVERSE VOLTAGE (VOLTS)

100 5.0 7.0 20 30 50101.0 2.0 3.0

C, CAPACITANCE (pF)

500

300

200

TJ = 25

Cib

Cob

TC = 25

2N5301

2N5302

2N5303

2000

1000

  

4Motorola Bipolar Power Transistor Device Data

5.0

0.03 IC, COLLECTOR CURRENT (AMP)

3.0

2.0

0.7

0.5

0.3

0.1

0.05 0.05 0.1 0.2 0.5 2.0 3.0 30

tr @ VCC = 30 V

td @ VOB = 2.0 V

TJ = 25

IC/IB = 10

0.07

t, TIME ( s)

1.0

Figure 7. Turn–On Time

1.0

0.2

0.3 5.0 10 20

tr @ VCC = 10 V

3.0

0.03 IC, COLLECTOR CURRENT (AMP)

0.7

0.5

0.3

0.1 0.05 0.1 0.5 1.0 3.0 30

tf @ VCC = 30 V

TJ = 25

IB1 = IB2

IC/IB = 10

′

≈

ts – 1/8 tf

t, TIME ( s)

Figure 8. Turn–Off Time

1.0

0.3 5.0 10

tf @ VCC = 10 V

′

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

300

0.03

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

100

Figure 10. Collector Saturation Region

2.0

0.01 IB, BASE CURRENT (AMP)

00.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

1.6

1.2

0.8

0.4

IC = 2.0 A

TJ = 25

5.0 A 10 A

200

hFE, DC CURRENT GAIN

TJ = 175

–55

VCE = 10 V

VCE = 2.0 V

20 A

108

Figure 11. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

20 40 60 80 100 120 140 160 200

106

105

104

103

102180

VCE = 30 V

IC = 2 x ICES

≈

ICES

TYPICAL ICES VALUES OBTAINED

FROM FIGURE 13

107

IC = 10 x ICES

2.0

0.03

IC, COLLECTOR CURRENT (AMP)

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

1.6

0.8

0.6

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 12. “On” Voltages

1.8

1.4

1.2

1.0

0.2

VBE(on) @ VCE = 2.0 V

  

Motorola Bipolar Power Transistor Device Data

103

–0.4

Figure 13. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

, COLLECTOR CURRENT ( A)

10–2

10–3 –0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6

VCE = 30 V TJ = 175

100

REVERSE FORWARD

IC = ICES

+2.5

0.03

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB for VBE(sat)

VC for VCE(sat)

TJ = –55

C to +175

*APPLIES FOR IC/IB < hFE @ VCE

2.0 V

+1.0

  

6Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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2N5301/D

*2N5301/D*

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