Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 - 60 - 80 VOLTS 200 WATTS * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) * Excellent Safe Operating Area -- 200 Watt dc Power Rating to 30 Vdc (2N5303) * Complements to PNP 2N4398, 2N4399 and 2N5745 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc VCB 40 60 80 Vdc IC 30 30 20 Adc Collector-Base Voltage Collector Current -- Continuous Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 Watts W/_C TJ, Tstg - 65 to + 200 _C Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 0.875 _C/W Thermal Resistance, Case to Ambient CA 34 _C/W * Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 160 180 200 Figure 1. Power Temperature Derating Curve Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 40 60 80 -- -- -- -- -- -- 5.0 5.0 5.0 -- -- -- 1.0 1.0 1.0 -- -- -- 10 10 10 -- -- -- 1.0 1.0 1.0 -- 5.0 40 15 15 5.0 5.0 -- 60 60 -- -- -- -- -- -- -- -- 0.75 1.0 1.5 2.0 2.0 3.0 -- -- -- -- -- 1.7 1.8 2.0 2.5 2.5 -- -- -- -- 1.5 1.7 25 3.0 fT hfe 2.0 -- MHz 40 -- -- tr ts tf -- 1.0 s -- 2.0 s -- 1.0 s *OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5301 2N5302 2N5303 Vdc ICEO mAdc ICEX mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) *(IC = 1.0 Adc, VCE = 2.0 Vdc) *(IC = 10 Adc, VCE = 2.0 Vdc) *(IC = 15 Adc, VCE = 2.0 Vdc) *(IC = 20 Adc, VCE = 4.0 Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) ALL TYPES 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 hFE *Collector-Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) 2N5301, 2N5302 2N5303 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 *Base Emitter Saturation Voltage (Note 1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 15 Adc, IB = 1.5 Adc) (IC = 20 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) ALL TYPES 2N5301, 2N5302 2N5303 2N5301, 2N5302 2N5303 *Base-Emitter On Voltage (Note 1) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 15 Adc, VCE = 2.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 -- VCE(sat) Vdc VBE(sat) Vdc VBE(on) Vdc *DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) *SWITCHING CHARACTERISTICS Rise Time Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Fall Time * Indicates JEDEC Registered Data. Note 1: Pulse Width 300 s, Duty Cycle 2 2.0%. Motorola Bipolar Power Transistor Device Data SWITCHING TIME EQUIVALENT TEST CIRCUITS INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% INPUT PULSE tr 20 ns PW = 10 to 100 s DUTY CYCLE = 2.0% VCC + 30 V 3.0 VCC + 30 V 3.0 +11 V +11 V - 2.0 V TO SCOPE tr 20 ns 10 TO SCOPE tr 20 ns 10 0 D - 9.0 V VBB = 7.0 V r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 2. Turn-On time 1.0 0.7 0.5 0.3 0.2 Figure 3. Turn-Off time D = 0.5 0.2 0.1 0.1 0.07 0.05 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.01 0.02 0.03 0.02 0.01 0.02 SINGLE PULSE 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME (ms) 20 30 50 100 200 300 500 1000 2000 Figure 4. Thermal Response 3000 100 s 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 2000 2N5303 2N5301, 5302 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 100 5.0 ms 1.0 ms dc TJ = 200C Secondary Breakdown Limited Bonding Wire Limited TC = 25C Thermal Limitations Pulse Duty Cycle 10% 2N5301 2N5302 2N5303 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area Motorola Bipolar Power Transistor Device Data TJ = 25C 1000 Cib 500 Cob 300 200 100 100 0.5 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 6. Capacitance versus Voltage 3 3.0 5.0 3.0 TJ = 25C IC/IB = 10 2.0 ts 1.0 t, TIME ( s) t, TIME ( s) 1.0 0.7 0.5 tr @ VCC = 30 V 0.3 0.7 0.5 tf @ VCC = 30 V 0.3 0.2 tf @ VCC = 10 V tr @ VCC = 10 V td @ VOB = 2.0 V 0.1 0.07 0.05 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 0.1 0.03 0.05 20 30 0.1 1.0 3.0 0.3 0.5 5.0 IC, COLLECTOR CURRENT (AMP) 300 hFE, DC CURRENT GAIN VCE = 10 V VCE = 2.0 V TJ = 175C 200 25C 100 70 50 - 55C 30 20 10 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 30 2.0 TJ = 25C 1.6 IC = 2.0 A 10 A 20 A 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 10. Collector Saturation Region 108 2.0 VCE = 30 V 1.6 IC = 10 x ICES 106 IC = 2 x ICES 105 IC ICES 104 103 20 40 60 80 100 1.4 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 0.4 TYPICAL ICES VALUES OBTAINED FROM FIGURE 13 0 TJ = 25C 1.8 107 V, VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 5.0 A 1.2 Figure 9. DC Current Gain 4 30 10 Figure 8. Turn-Off Time VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Turn-On Time 102 TJ = 25C IB1 = IB2 IC/IB = 10 ts ts - 1/8 tf VCE(sat) @ IC/IB = 10 0.2 120 140 160 180 200 0 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (AMP) Figure 11. Effects of Base-Emitter Resistance Figure 12. "On" Voltages 10 Motorola Bipolar Power Transistor Device Data 30 IC, COLLECTOR CURRENT ( A) VCE = 30 V 102 V, TEMPERATURE COEFFICIENTS (mV/C) 103 TJ = 175C 100C 101 25C 100 IC = ICES 10-1 10- 2 10- 3 - 0.4 - 0.3 REVERSE - 0.2 - 0.1 FORWARD 0 0.1 0.2 0.3 0.4 0.5 0.6 + 2.5 TJ = - 55C to +175C + 2.0 + 1.5 *APPLIES FOR IC/IB < + 1.0 + 0.5 hFE @ VCE 2 + 2.0 V *VC for VCE(sat) 0 - 0.5 - 1.0 VB for VBE(sat) - 1.5 - 2.0 - 2.5 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) Figure 13. Collector Cut-Off Region Figure 14. Temperature Coefficients Motorola Bipolar Power Transistor Device Data 30 5 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5301/D* 2N5301/D