BCW67, BCW68 PNP Silicon AF Transistors * For general AF applications 2 3 * High current gain 1 * Low collector-emitter saturation voltage * Complementary types: BCW66... (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B 2=E 3=C SOT23 BCW67C DCs 1=B 2=E 3=C SOT23 BCW68F DFs 1=B 2=E 3=C SOT23 BCW68G DGs 1=B 2=E 3=C SOT23 BCW68H DHs 1=B 2=E 3=C SOT23 1 Package 2011-09-15 BCW67, BCW68 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCW67 32 BCW68 45 Collector-base voltage Unit VCBO BCW67 45 BCW68 60 5 Emitter-base voltage VEBO Collector current IC Peak collector current, tp 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS 79C Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Symbol Value RthJS 215 Junction - soldering point1) 800 1 mA A mA -65 ... 150 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCW67 32 - - IC = 10 mA, IB = 0 , BCW68 45 - - IC = 10 A, IE = 0 , BCW67 45 - - IC = 10 A, IE = 0 , BCW68 60 - - 5 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 32 V, IE = 0 - - 0.02 VCB = 45 V, IE = 0 - - 0.02 VCB = 32 V, IE = 0 , TA = 150 C; BCW67 - - 20 VCB = 45 V, IE = 0 , TA = 150 C; BCW68 - - 20 - - 20 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 A, VCE = 10 V, hFE-grp.A/F 35 - - IC = 100 A, VCE = 10 V, hFE-grp.B/G 50 - - IC = 100 A, VCE = 10 V, hFE-grp.C/H 80 - - IC = 10 mA, VCE = 1 V, hFE-grp.A/F 75 - - IC = 10 mA, VCE = 1 V, hFE-grp.B/G 120 - - IC = 10 mA, VCE = 1 V, hFE-grp.C/H 180 - - IC = 100 mA, VCE = 1 V, hFE -grp.A/F 100 160 250 IC = 100 mA, VCE = 1 V, hFE -grp.B/G 160 250 400 IC = 100 mA, VCE = 1 V, hFE -grp.C/H 250 350 630 IC = 500 mA, VCE = 2 V, hFE -grp.A/F 35 - - IC = 500 mA, VCE = 2 V, hFE -grp.B/G 60 - - IC = 500 mA, VCE = 2 V, hFE -grp.C/H 100 - - 3 2011-09-15 BCW67, BCW68 DC Electrical Characteristics Parameter Symbol Values min. typ. Unit max. Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.7 IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 2 fT - 200 - MHz Ccb - 6 - pF Ceb - 60 - Base emitter saturation voltage1) VBEsat AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 4 2011-09-15 BCW67, BCW68 DC current gain hFE = (IC) VCE = 1 V 10 3 BCW 67/68 5 100 C Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 EHP00403 BCW 67/68 10 3 mA EHP00402 150 C 25 C -50 C C h FE 25 C 10 2 5 10 2 -50 C 5 10 1 5 10 1 10 5 0 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 10 -1 0 mA 10 3 200 400 600 mV 800 C VCE sat Collector cutoff current ICBO = (TA) VCBO = 25 V Base-emitter saturation voltage IC = (VBEsat), hFE = 10 10 3 BCW 67/68 EHP00401 10 5 nA mA 150 C 25 C -50 C C 10 2 CB0 BCW 67/68 EHP00400 10 4 5 5 10 3 10 max 5 1 5 10 2 5 typ 0 10 1 10 5 5 10 -1 0 1 2 3 V 10 0 4 VBE sat 0 50 100 C 150 TA 5 2011-09-15 BCW67, BCW68 Transition frequency fT = (IC) VCE = 5 V Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) BCW 67/68 10 3 EHP00398 65 pF MHz 5 55 CCB/CEB fT 50 45 40 35 10 2 30 25 5 20 CEB 15 10 CCB 5 10 1 10 0 5 10 1 5 10 2 0 0 mA 10 3 2 4 6 8 10 12 14 V 16 20 VCB/V EB C Total power dissipation P tot = (TS) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 360 V BCW 67/68 Ptot max 5 Ptot DC 300 EHP00399 D= tp T tp T 270 240 10 2 210 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 180 150 120 10 1 90 5 60 30 0 0 15 30 45 60 75 90 105 120 A 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-09-15 Package SOT23 BCW67, BCW68 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 7 2011-09-15 BCW67, BCW68 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2011-09-15