MJ11032 (NPN) & MJ11033 (PNP)
Silicon Darlington Transistors
High Current, General Purpose
TO−3 Type Package
Description:
The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors in a TO−3
type package designed for use as output devices in general purpose amplifier applications.
Features:
DHigh Gain Darlington Performance
DHigh DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A
DMonolithic Construction w/Built−In Base−Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 120V.....................................................
Collector−Base Voltage, VCB 120V........................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous 50A..................................................................
Peak 100A......................................................................
Continuous Base Current, IB2A..........................................................
Total Power Dissipation (TC = +25C), PD300W...........................................
Derate Above 25C @ TC = +100C 1.71W/C.......................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.584C/W...................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 120 − − V
Collector Cutoff Current ICEO VCE = 50V, IB = 0 − − 2 mA
Collector−Emitter Leakage Current ICER VCE = 120V, RBE = 1k− − 2 mA
VCE = 120V, RBE = 1k, TC = +125C− − 10 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 5 mA
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 25A, VCE = 5V 1000 −18000
IC = 50A, VCE = 5V 400 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 25A, IB = 250mA − − 2.5 V
IC = 50A, IB = 500mA − − 3.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 200mA − − 3.0 V
IC = 50A, IB = 300mA − − 4.5 V
Dynamic Characteristics
Small−Signal Current Gain |hfe| IC = 10A, VCE = 3V, f = 1.0MHz 4− −
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Note 2. fT = |hfe| ftest
Schematic Diagram
NPN PNP
B
C
E
B
C
E
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.061 (1.55) Max.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max