EM ELI & nme MOTOROLA SC {DIODES/OPTOF MOTOROLA = SEMICONDUCTOR ox TECHNICAL DATA Designers Data Sheet SURMETIC RECTIFIERS ...subminiature size, axial lead-mounted rectifiers for general- purpose, low-power applications. Designers Data for Worst Case Conditions The Designers Data Sheets permit the design of most circuits entirely from the information presented. Limits curvesrepresenting boundaries on device characteristicsare given to facilitate worst-case design. *MAXIMUM RATINGS cejaloe jw [nr als isle |e) 8 | 8 giggle l2/ 2/8 Rating symbot | 2) 2/2/42 [2] = | S| unit Peak Repetitive Reverse Voltage Vrram | 50 |100]200/400/600] 800 1000 | Volts Working Peak Reverse Voltage VRWM DC Blocking Voltage Vr Nonrepetitive Peak Reverse Voltage] Vast |100]200}300/525}800}1000}1200 | Volts (Halfwave, Single Phase, 60 Hz) RMS Reverse Voltage - |VRiRMs)| 35 | 70 [140] 280}420) 560 | 700 | Volts - Average Rectified Forward Curren lo 1.5 - Amp {Single Phase, Resistive Load, 60 Hz, Ty = 70C, 1/2" From Body) Nonrepetitive Peak Surge Current lesa [-t- 50 {for 1 cycle) -->} Amp {Surge Applied at Rated Load Conditions, See Figure 2) Storage Temperature Range Tstg _|-< -65 to +175 __ c Operating Temperature Range Te -65 to +170 _| C DC Blocking Voltage Temperature TL 150 C *ELECTRICAL CHARACTERISTICS Characteristic and Conditions Symbo! Typ Max Unit Maximum Instantaneous Forward Voltage Drop VE - 1.4 Volts (ip = 4.7 Amp Peak, Ty ~ 170C, 1/2 inch Leads} Maximum Reverse Current (Rated de Voltage) In 250 300 HA (TE = 150C) Maximum Full-Cycle Average Reverse Current (1) | IR(AV) -_ 300 BA (ig = 1.5 Amp, TL = 70C, 1/2 Inch Leads) *Indicates JEDEC Registered Data. NOTE 1: Measured in a single-phase, halfwave circuit such as shown in Figure 6.25 of EIA RS-282, November 1963. Operated at rated load conditions !9 = 1.5 A. Vr = VRWM- Ty = 70C. MECHANICAL CHARACTERISTICS CASE: Transfer molded plastic MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 240C, 1/8" from case for 10 seconds at 5 Ibs. tension FINISH: All external surfaces are corrosion-resistant, leads are readily solderable POLARITY: Cathode indicated by color band WEIGHT: 0.40 grams (approximately) L2E D J 6367255 0079Sb? b T-O1- 1S 1N5391 thru 1N5399 LEAD-MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC 00-41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED 8Y CATHODE BAND. 4. LEAD DIAMETER NOT CONTROLLED WITICN F OIMENSION. CASE 59-04 PLASTIC 3-41ARN NRA EE HL 8 * MOTOROLA SC {DIODES/OPTO} Toy yoy L2E D Ph b3b7255 DO7GSKS af at 1N5391 thru 1N5399 FIGURE 1 FORWARD VOLTAGE INSTANTANEOUS FORWARD CURRENT (AMP) ir, 6 24 28 32 36 ve. INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIGURE 2 MAXIMUM NONREPETITIVE SURGE CURRENT \pgm, PEAK SURGE CURRENT (AMP) TEMPERATURE COEFFICIENT (mV/C) 100 70 50 30 20 10 1.0 1 CYCLE Vasm SURGE APPLIED AT RATED LOAD CONDITIONS Ty = 470C, { = 60 Hz 2.0 5.0 10 20 50 NUMBER OF CYCLES FIGURE 3 FORWARD VOLTAGE TEMPERATURE COEFFICIENT 0005001002 005 61 02 0510 20 50 10 20 1g. INSTANTANEQUS FORWARD CURRENT (AMP) FIGURE 4 TYPICAL TRANSIENT THERMAL RESISTANCE OUTY CYCLE D tgiry PEAK POWER, Pp, st peak of an THE equrvatent suite powel pubte s =_ N44 Tat Poe Paytted D+ 0-0) Anse y+ tp) > Bustttgl - Rance where ST yy > increase sa junction temperatzre above the bead temperatute Bayr ti) = value af tranvent thermal cestance at time 19 Rag irperph + eHue st RagL ay at bere Uboly Roseity) + value of Ary (y) al end at gube ved th tp Rasegug) * value of Ragein at tune ty Raji. JUNCTION-TO-LEAD TRANSIENT THERMAL RESISTANCE (C/W) 1, TIME (m1) The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady- t= L=1/2" L = 1/32" 50 state conditions are achieved. Using the measured value of Ty, the junction temperature may be determined by: 3-42 T= t Ate'o | A eT Ae A No NE 1N5391 thru 1N5399 FIGURE 5 FORWARD POWER DISSIPATION es os fe 2 ocUmUCTOlmUmUmUCOTOlCOCUDEtC DS DISSIPATION (WATTS) tnd o Peiav), AVERAGE FORWARD POWER CAPACITIVE LOADS 0 0.8 10 1.5 20 25 3.0 35 40 IF(Ay). AVERAGE FORWARD CURRENT (AMP) FIGURE 7 1/2 LEAD LENGTH, VARIOUS LOADS v = RESISTIVE/ INDUCTIVE \pxytiavy=* LOADS a 5 10 | CAPACITIVE 29 | LOAOS 2 - > bo 2 - Ig(av), AVERAGE FORWARD CURRENT (AMP) 70 90 110 130 150 170 Ty, LEAD TEMPERATURE (C) Ss & FIGURE 9 STEADY-STATE THERMAL RESISTANCE 8 g MAXIMUM - o 3 TYPICAL o We We 38 Wz 5/8 3/4 78 10 L, LEAO LENGTH (INCHES) ReJL. THERMAL RESISTANCE JUNCTION-TO-LEAD (C/W) 3-43 MOTOROLA SC {DIODES/OPTO} Filps bee D i b367255 0079569 T i FIGURE 6 ~ EFFECT OF LEAD LENGTHS, RESISTIVE LOAD N bo 21/8" 38" 12" LOADS. BOTH LEADS TO HEAT SINK WITH LENGTHS SHOWN eS - = 3M RB >-,cUCUCUNDlUlUlUlCUCUMOD OD 2 = 'e(ayy. AVERAGE FORWARD CURRENT (AMP) aoe S 50 70 90 HO 130 150 70 T,, LEAD TEMPERATURE (C) FIGURE 8 PRINTED CIRCUIT BOARD MOUNTING, VARIOUS LOADS RESISTIVE/INDUCTIVE hexvltav)=* LOADS CAPACITIVE 20 LOADS Roja ~ (SEE NOTE 1) Ig(ay). AVERAGE FORWARD CURRENT (AMP) 30 50 10 90 110 130 160 170 Ta. AMBIENT TEMPERATURE (C) NOTE 1 Data shove for thermal resistance junction-to-ambient (044) for the mountings shown is to be used as typical guidetine values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR 844 IN STILL AIR MOUNTING METHOO ? MOUNTING METHOD 3 pry _bt P.C. Boaed with 1-1/2" x 1-1/2" copper surtace = Me" MOUNTING METHOD 2 - ik a Vector pin mounting Board Ground = PlaneMOTOROLA SC {DIODES/OPTO} T-Ol- (5 BFE? i b3b7255 0079570 b fj 1N5391 thru 1N5399 tie. FORWARD RECOVERY TIME (zs) C, CAPACITANCE (pF} o, EFFICIENCY FACTOR FIGURE 10 FORWARD RECOVERY TIME a t 1N5391/7 50 7.0 10 os 02 03 05 07 40 | 20 30 if, FORWARD CURRENT (AMP} FIGURE 12 JUNCTION CAPACITANCE ye 1N5391/7 1N5392/7 1N5398/9 Ot 02 05 0 20 5.0 10) (20 50100 Va, REVERSE VOLTAGE {VOLTS} FIGURE 174 RECTIFICATION WAVEFORM EFFICIENCY FOR SQUARE WAVE 07 05 BATA ~ 03 my 2590 Ty PE otsquare) = 1NS398/9 20 50 70 100 200 0 7.0 10 REPETITION FREQUENCY (kHz) O1 20 3.0 FIGURE 11 REVERSE RECOVERY TIME pte 1N6398/9 t,, f Ty = 26C Oi<ip<1.0Amp 1N539 1/7 tr, REVERSE RECOVERY TIME (us) 05 07 10 20 30 5.0 7.0 10 lallg, ORIVE CURRENT RATIO Ol 02 03 FIGURE 13 RECTIFICATION WAVEFORM EFFICIENCY FOR SINE WAVE 1.0 1N5391/7 07 0.5 1N5398/9 Ty? em Ty = 170C Po oEPEbrds B.3 1N391/7 a, EFFICIENCY FACTOR Yo t Poet Range sing = (V2? ALA 4A 0. .0 7.0 10 2030 50 70 100 200 REPETITION FREQUENCY (kHz) A 2.0. 3.0 RECTIFIER EFFICIENCY NOTE The rectification efficiency factor o shown in Figures 13 and 14 was catculated using the formula: v2otde) > v2 afde, Pe, = Yale). 00% a) Prms V2 o(rms) v2olach + V29tde) oO oO Ri For a sine wave input Vmsin (wt) to the diode, assumed lossless, the maximum theoretical efficiency factor becomes 40%; for a square wave input of amplitude Vj, the efficiency factor becomes 50%. (A full wave circuit has twice these efficiencies). As the frequency of the input signat is increased, the reverse recovery time of the diode (Figure 11) becomes significant, result- ing in an increasing ac voltage component across Ry which is opposite in polarity to the forward current thereby seducing the value of the efficiency factor o, as shown in Figures 13 and 14. It should. be emphasized that Figures 13 and 14 show wave- form efficiency only; they do not account for diode losses. Data was obtained by measuring the ac component of Vo with a true tms voltmeter and the dc component with adc voltmeter. The data was used in Equation 1 to obtain points for the Figures. 3-44