TC1017 150 mA, Tiny CMOS LDO With Shutdown Features General Description * Space-saving 5-Pin SC-70 and SOT-23 Packages * Extremely Low Operating Current for Longer Battery Life: 53 A (typ.) * Very Low Dropout Voltage * Rated 150 mA Output Current * Requires Only 1 F Ceramic Output Capacitance * High Output Voltage Accuracy: 0.5% (typ.) * 10 s (typ.) Wake-Up Time from SHDN * Power-Saving Shutdown Mode: 0.05 A (typ.) * Overcurrent and Overtemperature Protection * Pin-Compatible Upgrade for Bipolar Regulators The TC1017 is a high-accuracy (typically 0.5%) CMOS upgrade for bipolar Low Dropout regulators (LDOs). It is offered in a SC-70 or SOT-23 package. The SC-70 package represents a 50% footprint reduction versus the popular SOT-23 package and is offered in two pinouts to make board layout easier. Developed specifically for battery-powered systems, the TC1017's CMOS construction consumes only 53 A typical supply current over the entire 150 mA operating load range. This can be as much as 60 times less than the quiescent operating current consumed by bipolar LDOs. The TC1017 is designed to be stable, over the entire input voltage and output current range, with low-value (1 F) ceramic or tantalum capacitors. This helps to reduce board space and save cost. Additional integrated features, such as shutdown, overcurrent and overtemperature protection, further reduce the board space and cost of the entire voltage-regulating application. Applications * * * * * * Cellular/GSM/PHS Phones Battery-Operated Systems Portable Computers Medical Instruments Electronic Games Pagers Key performance parameters for the TC1017 include low dropout voltage (285 mV typical at 150 mA output current), low supply current while shutdown (0.05 A typical) and fast stable response to sudden input voltage and load changes. Package Types SC-70 SOT-23 VIN VOUT VOUT NC VOUT NC 5 4 5 4 5 4 TC1017 1 2 TC1017R 3 SHDN NC GND (c) 2005 Microchip Technology Inc. 1 2 TC1017 3 VIN GND SHDN 1 VIN 2 3 GND SHDN DS21813D-page 1 TC1017 1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE Name Absolute Maximum Ratings Input Voltage ....................................................................6.5V Power Dissipation ......................... Internally Limited (Note 7) Maximum Voltage On Any Pin ..................VIN + 0.3V to -0.3V Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Function Shutdown control input. SHDN NC No connect GND Ground terminal VOUT Regulated voltage output VIN Unregulated supply input ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C Boldface type specifications apply for junction temperatures of -40C to +125C. Parameter Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Sym Min Typ Max Units VIN 2.7 -- 6.0 V IOUTMAX 150 -- -- mA VOUT VR - 2.5% VR 0.5% VR + 2.5% V TCVOUT -- 40 -- ppm/C |(VOUT/VIN)| / VR -- 0.04 0.2 %/V Load Regulation (Note 4) |VOUT| / VR -- 0.38 1.5 % Dropout Voltage (Note 5) VIN - VOUT -- -- -- -- 2 90 180 285 -- 200 350 500 mV Line Regulation Supply Current Test Conditions Note 1 Note 2 Note 3 (VR + 1V) < VIN < 6V IL = 0.1 mA to IOUTMAX IL = 100 A IL = 50 mA IL = 100 mA IL = 150 mA IIN -- 53 90 A SHDN = VIH, IL = 0 Shutdown Supply Current IINSD -- 0.05 2 A SHDN = 0V Power Supply Rejection Ratio PSRR -- 58 -- dB f =1 kHz, IL = 50 mA tWK -- 10 -- s VIN = 5V, IL = 60 mA, CIN = COUT =1 F, f = 100 Hz Wake-Up Time (from Shutdown Mode) Note 1: 2: 3: 4: 5: 6: The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT. VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. 6 ( VOUTMAX - V OUTMIN ) x 10 TCV OUT = -------------------------------------------------------------------------------------V x T OUT Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 "Thermal Shutdown", for more details. 8: Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition. DS21813D-page 2 (c) 2005 Microchip Technology Inc. TC1017 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C Boldface type specifications apply for junction temperatures of -40C to +125C. Parameter Settling Time (from Shutdown mode) Output Short-Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Sym Min Typ Max Units Test Conditions tS -- 32 -- s VIN = 5V, IL = 60 mA, CIN = 1 F, COUT = 1 F, f = 100 Hz IOUTSC -- 120 -- mA VOUT = 0V, Average Current (Note 8) VOUT/PD -- 0.04 -- V/W Notes 6, 7 TSD -- 160 -- C TSD -- 10 -- C Output Noise eN -- 800 -- nV/Hz SHDN Input High Threshold VIH 45 -- -- %VIN VIN = 2.7V to 6.0V SHDN Input Low Threshold VIL -- -- 15 %VIN VIN = 2.7V to 6.0V Note 1: 2: 3: 4: 5: 6: f = 10 kHz The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT. VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. 6 (V -V ) x 10 OUTMAX OUTMIN TCV OUT = -------------------------------------------------------------------------------------V OUT x T Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 "Thermal Shutdown", for more details. 8: Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +6.0V and VSS = GND. Parameters Sym Min Typ Max Units Specified Temperature Range TA -40 -- +125 C Operating Temperature Range TA -40 -- +125 C Storage Temperature Range TA -65 -- +150 C Thermal Resistance, 5L-SOT23 JA -- 255 -- C/W Thermal Resistance, 5L-SC-70 JA -- 450 -- C/W Conditions Temperature Ranges Extended Temperature parts Thermal Package Resistances3 (c) 2005 Microchip Technology Inc. DS21813D-page 3 TC1017 2.0 TYPICAL PERFORMANCE CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C. 0.40 VOUT = 2.85V 0.35 TA = +125C 0.30 TA = +25C 0.25 TA = -40C 0.20 VOUT = 2.85V 0.35 Dropout Voltage (V) Dropout Voltage (V) 0.40 0.15 0.10 0.05 0.00 0.30 IOUT = 150 mA 0.25 0.20 IOUT = 100 mA 0.15 0.10 IOUT = 50 mA 0.05 0.00 0 25 50 75 100 125 150 -40 -15 10 Load Current (mA) Dropout Voltage vs. Output Load Regulation (%) -0.30 VOUT = 2.85V IOUT = 0-150 mA -0.35 -0.40 -0.45 -0.50 VIN = 6.0V -0.55 VIN = 3.85V -0.60 VIN = 3.3V -0.65 FIGURE 2-4: Temperature. 160 -0.70 110 Dropout Voltage vs. VOUT = 2.85V 140 120 100 80 60 40 20 -15 10 35 60 85 110 1 2 3 Temperature (C) FIGURE 2-2: Temperature. 4 5 6 Input Voltage (V) Load Regulation vs. FIGURE 2-5: Input Voltage. Short-Circuit Current vs. 57 VOUT = 2.85V VOUT = 2.85V 56 Supply Current (A) Supply Current (A) 85 0 -40 57 60 Temperature (C) Short Circuit Current (mA) FIGURE 2-1: Current. 35 55 TA = +125C 54 53 TA = +25C 52 51 TA = -40C 50 56 VIN = 6.0V 55 54 VIN = 3.85V 53 52 VIN = 3.3V 51 50 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 -40 -15 DS21813D-page 4 Supply Current vs. Input 35 60 85 110 Temperature (C) Input Voltage (V) FIGURE 2-3: Voltage. 10 FIGURE 2-6: Temperature. Supply Current vs. (c) 2005 Microchip Technology Inc. TC1017 Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C. 0.40 VOUT = 3.30V 0.35 0.30 TA = +125C TA = +25C 0.25 TA = -40C 0.20 VOUT = 3.30V 0.35 Dropout Voltage (V) Dropout Voltage (V) 0.40 0.15 0.10 0.05 0.00 IOUT = 150 mA 0.30 0.25 0.20 IOUT = 100 mA 0.15 0.10 IOUT = 50 mA 0.05 0.00 0 25 50 75 100 125 150 -40 -15 10 Load Current (mA) FIGURE 2-7: Current. Dropout Voltage vs. Output FIGURE 2-10: Temperature. 60 85 110 Dropout Voltage vs. 60 VOUT = 3.30V IOUT = 0-150 mA -0.35 VIN = 6.0V -0.40 -0.45 -0.50 -0.55 VIN = 4.3V -0.60 VIN = 4.0V -0.65 Supply Current (A) Load Regulation (%) -0.30 59 VOUT = 3.30V 58 57 TA = +25C 56 55 TA = +125C 54 53 -0.70 TA = -40C 52 -40 -15 10 35 60 85 110 4.0 4.5 Temperature (C) FIGURE 2-8: Temperature. FIGURE 2-11: Voltage. VIN = 6.0V 56 VIN = 4.3V 55 54 VIN = 4.0V 53 6.0 Supply Current vs. Input VOUT = 2.85V Output Voltage (V) 58 57 5.5 2.869 VOUT = 3.30V 59 5.0 Input Voltage (V) Load Regulation vs. 60 Supply Current (A) 35 Temperature (C) 2.868 2.867 TA = -40C 2.866 TA = +25C 2.865 2.864 TA = +125C 2.863 52 2.862 -40 -15 10 35 60 85 110 3.3 3.6 3.9 FIGURE 2-9: Temperature. Supply Current vs. (c) 2005 Microchip Technology Inc. 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Input Voltage (V) Temperature (C) FIGURE 2-12: Voltage. Output Voltage vs. Supply DS21813D-page 5 TC1017 Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C. 2.869 2.870 VOUT = 2.85V VOUT = 2.85V 2.868 Output Voltage (V) Output Voltage (V) 2.868 2.866 VIN = 6.0V 2.864 2.862 2.860 VIN = 3.85V 2.858 2.856 2.854 VIN = 6.0V 2.867 VIN = 3.3V 2.866 2.865 VIN= 3.85V 2.864 2.863 2.862 0 25 50 75 100 125 -40 150 -15 10 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Output Voltage vs. Output FIGURE 2-16: Temperature. 85 110 Output Voltage vs. VIN = 3.85V VOUT = 2.85V CIN = 1 F COUT = 1 F IOUT = 40 mA TA = +125C 10 1 0.1 TA = +25C 0.01 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 10 100 1000 Input Voltage (V) FIGURE 2-14: Voltage. -10 -20 Shutdown Current vs. Input FIGURE 2-17: 0 IOUT = 100 A COUT =1 F X7R Ceramic VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V -30 -40 -10 -20 -60 -60 1 10 100 1000 Frequency (KHz) FIGURE 2-15: Power Supply Rejection Ratio vs. Frequency. DS21813D-page 6 1000000 Output Noise vs. Frequency. IOUT = 1 mA COUT = 1 F X7R Ceramic VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V -40 -50 0.1 100000 -30 -50 -70 0.01 10000 Frequency (Hz) PSRR (dB) 0 PSRR (dB) 60 100 VOUT = 2.85V Noise (V/Hz) Shutdown Current (A) FIGURE 2-13: Current. 35 Temperature (C) Load Current (mA) -70 0.01 0.1 1 10 100 1000 Frequency (KHz) FIGURE 2-18: Power Supply Rejection Ratio vs. Frequency. (c) 2005 Microchip Technology Inc. TC1017 Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C. 0 -10 PSRR (dB) -20 IOUT = 50 mA COUT = 1F X7R Ceramic VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V COUT V IN = 3.85V CIN = 10 F = 1 F Ceramic V OUT = 2.85V -30 -40 -50 IOUT = 0.1 mA to 120 mA -60 -70 -80 0.01 0.1 1 10 100 1000 Frequency (KHz) FIGURE 2-19: Power Supply Rejection Ratio vs. Frequency. FIGURE 2-22: Load Transient Response. V OUT = 2.85V COUT COUT V IN = 3.85V CIN = 10 F = 1 F Ceramic Shutdow n Input FIGURE 2-20: Wake-Up Response. V OUT = 2.85V IOUT = 0.1 mA to 120 mA FIGURE 2-23: Load Transient Response. CIN = 0 F COUT = 1.0 F Ceramic ILOAD = 120 mA V OUT = 2.85V V IN = 3.85V CIN = 10 F COUT = 4.7 F Ceramic V IN = 3.85V CIN = 10 F = 4.7 F Ceramic V OUT = 2.85V V IN = 3.85V to 4.85V Shutdow n Input FIGURE 2-21: Wake-Up Response. (c) 2005 Microchip Technology Inc. FIGURE 2-24: Line Transient Response. DS21813D-page 7 TC1017 Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 A, CL = 1.0 F, SHDN > VIH, TA = +25C. CIN = 0 F COUT = 4.7 F Ceramic ILOAD = 120 mA V IN = 4.3V to 5.3V CIN = 0 F COUT = 10 F Ceramic ILOAD = 100 A V OUT = 2.85V V IN = 3.85V to 4.85V V OUT = 3.33V FIGURE 2-25: Line Transient Response. V IN = 4.3V to 5.3V FIGURE 2-27: Line Transient Response. CIN = 0 F COUT = 1 F Ceramic ILOAD = 100 A V OUT = 3.33V FIGURE 2-26: DS21813D-page 8 Line Transient Response. (c) 2005 Microchip Technology Inc. TC1017 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. 5-Pin SC-70 Pin No. 5-Pin SOT-23 5-Pin SC-70R Symbol 1 3 SHDN 2 4 NC 3 2 GND Ground Terminal 4 5 VOUT Regulated Voltage Output 5 1 VIN Unregulated Supply Input 3.1 Shutdown Control Input (SHDN) Description Shutdown Control Input No Connect 3.3 Regulated Voltage Output (VOUT) The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.05 A (typ.) Bypass the regulated voltage output to GND with a minimum capacitance of 1 F. A ceramic bypass capacitor is recommended for best performance. 3.2 The minimum VIN has to meet two conditions in order to ensure that the output maintains regulation: VIN 2.7V and VIN [(VR + 2.5%) + VDROPOUT]. The maximum VIN should be less than or equal to 6V. Power dissipation may limit VIN to a lower potential in order to maintain a junction temperature below 125C. Refer to Section 5.0 "Thermal Considerations", for determining junction temperature. Ground Terminal For best performance, it is recommended that the ground pin be tied to a ground plane. 3.4 Unregulated Supply Input (VIN) It is recommended that VIN be bypassed to GND with a ceramic capacitor. (c) 2005 Microchip Technology Inc. DS21813D-page 9 TC1017 4.0 DETAILED DESCRIPTION ature is approximately 150C and the P-channel is turned on. If the internal power dissipation is still high enough for the junction to rise to 160C, it will again shut off and cool. The maximum operating junction temperature of the device is 125C. Steady-state operation at or near the 160C overtemperature point can lead to permanent damage of the device. The TC1017 is a precision, fixed-output, linear voltage regulator. The internal linear pass element is a P-channel MOSFET. As with all P-channel CMOS LDOs, there is a body drain diode with the cathode connected to VIN and the anode connected to VOUT (Figure 4-1). The output voltage VOUT remains stable over the entire input operating voltage range (2.7V to 6.0V) and the entire load range (0 mA to 150 mA). The output voltage is sensed through an internal resistor divider and compared with a precision internal voltage reference. Several fixed-output voltages are available by changing the value of the internal resistor divider. As is shown in Figure 4-1, the output voltage of the LDO is sensed and divided down internally to reduce external component count. The internal error amplifier has a fixed bandgap reference on the inverting input and the sensed output voltage on the non-inverting input. The error amplifier output will pull the gate voltage down until the inputs of the error amplifier are equal to regulate the output voltage. Figure 4-2 shows a typical application circuit. The regulator is enabled any time the shutdown input pin is at or above VIH. It is shut down (disabled) any time the shutdown input pin is below VIL. For applications where the SHDN feature is not used, tie the SHDN pin directly to the input supply voltage source. While in shutdown, the supply current decreases to 0.006 A (typical) and the P-channel MOSFET is turned off. Output overload protection is implemented by sensing the current in the P-channel MOSFET. During a shorted or faulted load condition in which the output voltage falls to less than 0.5V, the output current is limited to a typical value of 120 mA. The current-limit protection helps prevent excessive current from damaging the Printed Circuit Board (PCB). As shown in Figure 4-2, batteries have internal source impedance. An input capacitor is used to lower the input impedance of the LDO. In some applications, high input impedance can cause the LDO to become unstable. Adding more input capacitance can compensate for this. An internal thermal sensing device is used to monitor the junction temperature of the LDO. When the sensed temperature is over the set threshold of 160C (typical), the P-channel MOSFET is turned off. When the P-channel is off, the power dissipation internal to the device is almost zero. The device cools until the junction temper- 1 SHDN VIN 5 2 NC Current Limit VIN SHDN VREF Control Error Amp 3 GND Over Temp. FIGURE 4-1: Body Diode EA + VOUT 4 R1 R2 Feedback Resistors TC1017 Block Diagram (5-Pin SC-70 Pinout). BATTERY 1 SHDN RSOURCE VIN 5 TC1017 CIN 3 GND VOUT 4 Load COUT FIGURE 4-2: DS21813D-page 10 1 F Ceramic 2 NC 1 F Ceramic Typical Application Circuit (5-Pin SC-70 Pinout). (c) 2005 Microchip Technology Inc. TC1017 4.1 Input Capacitor 4.3 Low input source impedance is necessary for the LDO to operate properly. When operating from batteries, or in applications with long lead length (> 10") between the input source and the LDO, some input capacitance is required. A minimum of 0.1 F is recommended for most applications and the capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will help reduce the input impedance and further reduce any high-frequency noise on the input and output of the LDO. 4.2 Output Capacitor A minimum output capacitance of 1 F for the TC1017 is required for stability. The Equivalent Series Resistance (ESR) requirements on the output capacitor are between 0 and 2 ohms. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 F X5R 0805 capacitor has an ESR of 50 milli-ohms. Larger output capacitors can be used with the TC1017 to improve dynamic behavior and input ripple-rejection performance. Ceramic, aluminum electrolytic or tantalum capacitor types can be used. Since many aluminum electrolytic capacitors freeze at approximately -30C, ceramic or solid tantalums are recommended for applications operating below -25C. When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. Turn-On Response The turn-on response is defined as two separate response categories, wake-up time (tWK) and settling time (tS). The TC1017 has a fast wake-up time (10 sec, typical) when released from shutdown. See Figure 4-3 for the wake-up time designated as tWK. The wake-up time is defined as the time it takes for the output to rise to 2% of the VOUT value after being released from shutdown. The total turn-on response is defined as the settling time (tS) (see Figure 4-3). Settling time (inclusive with tWK) is defined as the condition when the output is within 98% of its fully-enabled value (32 sec, typical) when released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on VOUT (RC response). The table below demonstrates the typical turn-on response timing for different input voltage power-up frequencies: VOUT = 2.85V, VIN = 5.0V, IOUT = 60 mA and COUT = 1 F. Frequency Typical (tWK) Typical (tS) 1000 Hz 5.3 sec 14 sec 500 Hz 5.9 sec 16 sec 100 Hz 9.8 sec 32 sec 50 Hz 14.5 sec 52 sec 10 Hz 17.2 sec 77 sec VIH VIL tS SHDN 98% 2% VOUT tWK FIGURE 4-3: Wake-Up Time from Shutdown. (c) 2005 Microchip Technology Inc. DS21813D-page 11 TC1017 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds approximately 160C. The regulator remains off until the die temperature drops to approximately 150C. Given the following example: 3.0V to 4.1V VOUT = 2.85V 2.5% ILOAD = 120 mA (output current) TA = 55C (max. desired ambient) Internal power dissipation: Power Dissipation: SC-70 The TC1017 is available in the SC-70 package. The thermal resistance for the SC-70 package is approximately 450C/W when the copper area used in the PCB layout is similar to the JEDEC J51-7 high thermal conductivity standard or semi-G42-88 standard. For applications with a larger or thicker copper area, the thermal resistance can be lowered. See AN792, "A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application", DS00792, for a method to determine the thermal resistance for a particular application. = Find: 1. 5.2 VIN P DMAX = ( VIN_MAX - V OUT_MIN ) x I LOAD = ( 4.1V - 2.85 x ( 0.975 ) ) x 120mA = 158.5mW 2. Maximum allowable ambient temperature: T A_MAX = T J_MAX - P x R JA DMAX = ( 125 C - 158.5mW x 450 C/W ) = ( 125 C - 71 C ) = 54 C 3. Maximum allowable desired ambient: The TC1017 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steadystate junction temperature is rated at +125C. The power dissipation within the device is equal to: EQUATION 5-1: PD = ( V IN - V OUT ) x I LOAD + V IN x I GND The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term, simplifying the power dissipation within the LDO to be: EQUATION 5-2: PD = ( VIN - VOUT ) x I LOAD To determine the maximum power capability, the following equation is used: dissipation power dissipation at T J_MAX - T A P D = ----------------------------R JA 125 C - 55 C= ---------------------------------450 C/W = 155mW In this example, the TC1017 dissipates approximately 158.5 mW and the junction temperature is raised 71C over the ambient. The absolute maximum power dissipation is 155 mW when given a maximum ambient temperature of 55C. Input voltage, output voltage or load current limits can also be determined by substituting known values in the power dissipation equations. Figure 5-1 and Figure 5-2 depict typical maximum power dissipation versus ambient temperature, as well as typical maximum current versus ambient temperature, with a 1V input voltage to output voltage differential, respectively. ( T J_MAX - T A_MAX ) P DMAX = --------------------------------------------R JA Where: TJ_MAX = the maximum junction temperature allowed TA_MAX = the maximum ambient temperature RJA = the thermal resistance from junction to air DS21813D-page 12 Power Dissipation (mW) 400 EQUATION 5-3: 350 300 250 200 150 100 50 0 -40 -15 10 35 60 85 110 Ambient Temperature (C) FIGURE 5-1: Power Dissipation vs. Ambient Temperature (SC-70 package). (c) 2005 Microchip Technology Inc. TC1017 EQUATION 5-6: Maximum Current (mA) 160 ( T J_MAX - T A_MAX ) P DMAX = ---------------------------------------------RJA VIN - VOUT = 1V 140 120 Where: 100 TJ_MAX = the maximum junction temperature allowed 80 60 40 TA_MAX = the maximum ambient temperature 20 0 -40 -15 10 35 60 85 RJA 110 = the thermal resistance from junction to air Ambient Temperature (C) FIGURE 5-2: Maximum Current vs. Ambient Temperature (SC-70 package). 5.3 Given the following example: Power Dissipation: SOT-23 The TC1017 is also available in a SOT-23 package for improved thermal performance. The thermal resistance for the SOT-23 package is approximately 255C/W when the copper area used in the printed circuit board layout is similar to the JEDEC J51-7 low thermal conductivity standard or semi-G42-88 standard. For applications with a larger or thicker copper area, the thermal resistance can be lowered. See AN792, "A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application", DS00792, for a method to determine the thermal resistance for a particular application. The TC1017 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steadystate junction temperature is rated at +125C. The power dissipation within the device is equal to: EQUATION 5-4: P D = ( V IN - V OUT ) x I LOAD + V IN x I GND VIN = 3.0V to 4.1V VOUT = 2.85V 2.5% ILOAD = TA = 120 mA (output current) +85C (max. desired ambient) Find: 1. Internal power dissipation: P DMAX = ( VIN_MAX - V OUT_MIN ) x I LOAD = ( 4.1V - 2.85 x ( 0.975 ) ) x 120mA = 158.5mW 2. Maximum allowable ambient temperature: T A_MAX = = = = 3. T J_MAX - P DMAX x R JA ( 125 C - 158.5mW x 255 C/W ) ( 125 C - 40.5 C ) 84.5 C Maximum allowable desired ambient: power dissipation at T J_MAX - T A P D = ----------------------------R JA 125 C - 85 C= ---------------------------------255 C/W = 157mW The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term, simplifying the power dissipation within the LDO to be: EQUATION 5-5: PD = ( VIN - VOUT ) x I LOAD To determine the maximum power capability, the following equation is used: (c) 2005 Microchip Technology Inc. dissipation In this example, the TC1017 dissipates approximately 158.5 mW and the junction temperature is raised 40.5C over the ambient. The absolute maximum power dissipation is 157 mW when given a maximum ambient temperature of +85C. Input voltage, output voltage or load current limits can also be determined by substituting known values in the power dissipation equations. Figure 5-3 and Figure 5-4 depict typical maximum power dissipation versus ambient temperature, as well as typical maximum current versus ambient temperature with a 1V input voltage to output voltage differential, respectively. DS21813D-page 13 TC1017 5.4 Layout Considerations Power Dissipation (mW) 700 The primary path for heat conduction out of the SC-70/ SOT-23 package is through the package leads. Using heavy wide traces at the pads of the device will facilitate the removal of the heat within the package, thus lowering the thermal resistance RJA. By lowering the thermal resistance, the maximum internal power dissipation capability of the package is increased. 600 500 400 300 200 100 0 -40 -15 10 35 60 85 SHDN 110 Ambient Temperature (C) VIN FIGURE 5-3: Power Dissipation vs. Ambient Temperature (SOT-23 Package). U1 VOUT C2 C1 Maximum Current (mA) 160 140 GND 120 VIN - VOUT = 1V 100 FIGURE 5-5: Layout. 80 60 SC-70 Package Suggested 40 20 0 -40 -15 10 35 60 85 110 Ambient Temperature (C) FIGURE 5-4: Maximum Current vs. Ambient Temperature (SOT-23 Package). DS21813D-page 14 (c) 2005 Microchip Technology Inc. TC1017 6.0 PACKAGE INFORMATION 6.1 Package Marking Information 5-Pin SC-70/SC-70R TC1017 Pinout Code TC1017R Pinout Code TC1017 - 1.8VLT CE CU TC1017 - 1.85VLT CQ DF TC1017 - 1.9VLT CB TC1017 - 2.5VLT CR CV TC1017 - 2.6VLT CF CW TC1017 - 2.7VLT CG CX TC1017 - 2.8VLT CH CY Part Number X X N Y W Bottom Side Top Side OR 5-Pin SC-70/SC-70R X X N N Legend: XX...X Y YY WW NNN e3 * Note: W TC1017 - 2.85VLT CJ CZ TC1017 - 2.9VLT CK DA TC1017 - 3.0VLT CL DB TC1017 - 3.2VLT CC DC TC1017 - 3.3VLT CM DD TC1017 - 4.0VLT CP DE Customer-specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2005 Microchip Technology Inc. DS21813D-page 15 TC1017 6.1 Package Marking Information (Continued) 5-Lead SOT-23 XXNN DS21813D-page 16 Part Number Code TC1017 - 1.8VCT DA TC1017 - 1.85VCT DK TC1017 - 2.6VCT DB TC1017 - 2.7VCT DC TC1017 - 2.8VCT DD TC1017 - 2.85VCT DE TC1017 - 2.9VCT DF TC1017 - 3.0VCT DG TC1017 - 3.3VCT DH TC1017 - 4.0VCT DJ Example: DANN (c) 2005 Microchip Technology Inc. TC1017 5-Lead Plastic Small Outline Transistor (LT) (SC-70) E E1 D p B n 1 Q1 A2 c A A1 L Units Dimension Limits n p Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Top of Molded Pkg to Lead Shoulder Lead Thickness Lead Width A A2 A1 E E1 D L Q1 c B MIN .031 .031 .000 .071 .045 .071 .004 .004 .004 .006 INCHES NOM 5 .026 (BSC) MAX .043 .039 .004 .094 .053 .087 .012 .016 .007 .012 MILLIMETERS* NOM 5 0.65 (BSC) 0.80 0.80 0.00 1.80 1.15 1.80 0.10 0.10 0.10 0.15 MIN MAX 1.10 1.00 0.10 2.40 1.35 2.20 0.30 0.40 0.18 0.30 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEITA (EIAJ) Standard: SC-70 Drawing No. C04-061 (c) 2005 Microchip Technology Inc. DS21813D-page 17 TC1017 5-Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 p B p1 n D 1 c A Units Dimension Limits n Number of Pins p Pitch p1 Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic L A A2 A1 E E1 D L c B MIN .035 .035 .000 .102 .059 .110 .014 0 .004 .014 0 0 A2 A1 INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5 MAX .057 .051 .006 .118 .069 .122 .022 10 .008 .020 10 10 MILLIMETERS NOM 5 0.95 1.90 0.90 1.18 0.90 1.10 0.00 0.08 2.60 2.80 1.50 1.63 2.80 2.95 0.35 0.45 0 5 0.09 0.15 0.35 0.43 0 5 0 5 MIN MAX 1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091 DS21813D-page 18 (c) 2005 Microchip Technology Inc. TC1017 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X.XX X XXXX Device Voltage Options Temperature Range Package Examples: a) b) Device: Voltage Options:* (Standard) TC1017: 150 mA Tiny CMOS LDO with Shutdown TC1017R:150 mA Tiny CMOS LDO with Shutdown (SC-70 only) 1.8V 1.85V 2.5V 2.6V 2.7V 2.8V 2.85V 2.9V 3.0V 3.2V 3.3V 4.0V c) d) SC-70 only e) f) SC-70 only g) * Other voltage options available. Please contact your local Microchip sales office for details. h) Temperature Range: V i) Package: LTTR = 5-pin SC-70 (Tape and Reel) CTTR = 5-pin SOT-23 (Tape and Reel) = -40C to +125C j) TC1017-1.8VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017R-1.8VLTTR:150mA, Tiny CMOS LDO with Shutdown, SC-70R package. TC1017-2.6VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-2.7VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-2.8VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-2.85VLTTR:150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-2.9VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-3.0VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-3.3VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-4.0VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com) to receive the most current information on our products. (c) 2005 Microchip Technology Inc. DS21813D-page 19 TC1017 NOTES: DS21813D-page 20 (c) 2005 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2005 Microchip Technology Inc. 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