264
Silicon Junction FETs (Small Signal)
unit: mm
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
■Features
●Low noies, high gain
●High gate to drain voltage VGDO
●Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
Ratings
55
−55
−55
±30
10
125
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
■Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
IDSS*
IGSS
VGDS
VGSC
| Yfs |
Ciss
Crss
NF
Conditions
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100kΩ
f = 100Hz
min
1
55
2.5
max
20
10
−5
Unit
mA
nA
V
V
mS
pF
pF
dB
typ
80
7.5
6.5
1.9
2.5
Marking Symbol (Example): 2B
* IDSS rank classification
Runk
IDSS (mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1: Source
2: Drain EIAJ: SC-89
3: Gate SSMini3-F2 Package
S
10 to 20
2BS
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60+0.05
– 0.03
0.12+0.05
– 0.02
0.60+0.05
– 0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3°
(0.44)(0.44)
0.88
(0.375)
+0.05
– 0.03
0.80±0.05
(0.80)
1.60±0.05
3°
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
265
Silicon Junction FETs (Small Signal)
PD Ta ID VDS ID VDS
ID VGS | Yfs | VGS | Yfs | ID
Ciss VDS Coss VDS Crss VDS
2SK2593
0 16040 12080 14020 10060
0
150
125
100
75
50
25
Ambient temperature Ta (˚C)
Allowable power dissipation P
D
(mW)
0654132
0
5
4
3
2
1
Ta=25˚C
V
GS
=0
– 0.8V
– 0.6V
– 0.4V
– 0.2V
– 1.0V
Drain to source voltage VDS (V)
Drain current ID (mA)
012108264
0
10
8
6
4
2
Ta=25˚C
V
GS
=0V
– 0.2V
– 0.4V
– 0.6V
– 0.8V
– 1.0V
– 1.2V
Drain to source voltage VDS (V)
Drain current ID (mA)
0–1.2–1.0– 0.8– 0.2 – 0.6– 0.4
0
16
12
4
10
14
8
2
6
V
DS
=10V
Ta=25˚C
Ta=–25˚C
25˚C
75˚C
Gate to source voltage VGS (V)
Drain current ID (mA)
–2.0 0– 0.4–1.6 – 0.8–1.2
0
12
10
8
6
4
2
V
DS
=10V
Ta=25˚C
Gate to source voltage VGS (V)
Forward transfer admittance |Yfs| (mS)
0108264
0
12
10
8
6
4
2
VDS=10V
Ta=25˚C
IDSS=7.5mA
Drain current ID (mA)
Forward transfer admittance |Y
fs
| (mS)
012108264
0
16
12
4
10
14
8
2
6
VGS=0
Ta=25˚C
Drain to source voltage VDS (V)
Input capacitance (Common source) C
iss
(pF)
012108264
0
8
6
2
5
7
4
1
3
V
GS
=0
Ta=25˚C
Drain to source voltage VDS (V)
Output capacitance (Common source) C
oss
(pF)
012108264
0
8
6
2
5
7
4
1
3
V
GS
=0
Ta=25˚C
Drain to source voltage VDS (V)
Reverse transfer capacitance (Common source) Crss (pF)
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
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Consult our sales staff in advance for information on the following applications:
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(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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Electric Industrial Co., Ltd.
Maintenance/
Discontinued
Maintenance/Discontinued includes following four Product lifecycle stage.
planed maintenance type
maintenance type
planed discontinued typed
discontinued type
Please visit following URL about latest information.
http://www.semicon.panasonic.co.jp/en/
