Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.800.05 Low noies, high gain High gate to drain voltage VGDO Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.12+0.05 - 0.02 (0.44) Features 3 (0.44) 0.280.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 - 0.03 1.60+0.05 - 0.03 Symbol Gate to Drain voltage VGDO Gate to Source voltage VGSO Drain current ID Gate current IG Allowable power dissipation PD Junction temperature Tj Storage temperature Tstg Ratings Unit 55 V -55 V -55 V 30 mA 10 mA 125 mW 125 C -55 to +125 C 1: Source 2: Drain 3: Gate EIAJ: SC-89 SSMini3-F2 Package Marking Symbol (Example): 2B ue VDSX (0.15) Parameter 0 to 0.1 3 Absolute Maximum Ratings (Ta = 25C) Drain to Source voltage (0.375) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1 2 1.600.05 (0.80) 3 0.88+0.05 - 0.03 M Di ain sc te on na tin nc ue e/ d 0.280.05 ce /D isc on tin Electrical Characteristics (Ta = 25C) Symbol Gate to Source leakage current IGSS VGS = -30V, VDS = 0 Gate to Drain voltage VGDS IG = -100A, VDS = 0 VGSC VDS = 10V, ID = 10A Forward transfer admittance | Yfs | VDS = 10V, ID = 5mA, f = 1kHz an VDS = 10V, VGS = 0 Ma int Gate to Source cut-off voltage Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions IDSS* en Parameter Drain to Source cut-off current NF VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100k f = 100Hz IDSS rank classification Runk P Q R S IDSS (mA) 1 to 3 2 to 6.5 5 to 12 10 to 20 Marking Symbol 2BP 2BQ 2BR 2BS 264 min typ 1 max Unit 20 mA 10 nA 55 80 V 2.5 7.5 mS 6.5 pF 1.9 pF 2.5 dB -5 V Silicon Junction FETs (Small Signal) 2SK2593 PD Ta ID VDS 5 10 Ta=25C 125 Ta=25C 100 75 8 3 Drain current ID (mA) Drain current ID (mA) 4 VGS=0 - 0.2V - 0.4V VGS=0V - 0.2V 6 - 0.4V M Di ain sc te on na tin nc ue e/ d Allowable power dissipation PD (mW) 150 ID VDS 50 1 4 - 0.6V - 0.8V 2 - 0.8V - 1.0V - 1.0V 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (C) 1 2 3 4 5 6 0 Drain to source voltage VDS (V) ID VGS Ta=-25C 25C 6 4 75C 2 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 10 ce /D isc on tin an en int 12 Ma 10 8 6 4 2 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Output capacitance (Common source) Coss (pF) VGS=0 Ta=25C 14 8 10 12 | Yfs | ID 6 4 2 8 IDSS=7.5mA 6 4 2 0 -1.6 -1.2 - 0.8 - 0.4 0 0 2 VGS=0 Ta=25C 7 6 5 4 3 2 1 0 2 4 6 8 10 12 Drain to source voltage VDS (V) 4 6 8 10 Drain current ID (mA) Coss VDS 8 0 VDS=10V Ta=25C 10 Gate to source voltage VGS (V) Ciss VDS 16 8 0 -2.0 -1.2 Gate to source voltage VGS (V) VDS=10V Ta=25C ue 0 Forward transfer admittance |Yfs| (mS) 10 6 12 Reverse transfer capacitance (Common source) Crss (pF) 12 Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25C 14 4 Drain to source voltage VDS (V) 12 8 2 | Yfs | VGS 16 - 1.2V di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 0 Drain current ID (mA) - 0.6V 25 0 Input capacitance (Common source) Ciss (pF) 2 Crss VDS 8 VGS=0 Ta=25C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) 265 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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