2SB817P / 2SD1047P
No.6572-1/4
Features
•Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
•Wide ASO because of built-in ballast resistance.
•Goode dependence of fT on current and good HF
characteristic.
Specifications
( ) : 2SB817P
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (−)160 V
Collector-to-Emitter Voltage VCEO (−)140 V
Emitter-to-Base Voltage VEBO (−)6 V
Collector Current IC(−)12 A
Collector Current (Pulse) ICP (−)15 A
Collector Dissipation PCTc=25°C 120 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −40 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)80V, IE=0 (--)0.1 mA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)0.1 mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6572
Package Dimensions
unit : mm
2022A
[2SB817P / 2SD1047P]
82200 TS IM TA-3036
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0 20.0
15.0
1.3
3.2 4.8 2.0
0.6
5.45
5.45
1.4
123
2SB817P : PNP Epitaxial Planar Silicon Transistor
2SD1047P : NPN Triple Diffused Planar Silicon Transistor
2SB817P / 2SD1047P
140V / 12A, AF80W Output Applications
2SB817P / 2SD1047P
No.6572-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
DC Current Gain hFE1V
CE=(--)5V, IC=(--)1A 60* 200*
hFE2V
CE=(--)5V, IC=(--)6A 20
Gain-Bandwidth Product fTVCE=(--)5V, IC=(--)1A 15 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (300)210 pF
Base-to-Emitter Saturation Voltage VBE VCE=(--)5V, IC=(--)1A 1.5 V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (1.1)0.6 2.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=( --)5mA, IE=0 (--)160 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)5mA, RBE=∞(--)140 V
IC=(--)50mA, RBE=∞(--)140 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V
T urn-ON T ime ton See specified test circuit.
(0.25)0.26
µs
Fall Time tfSee specified test circuit.
(0.53)0.68
µs
Storage Time tstg See specified test circuit.
(1.61)6.88
µs
* : The 2SB817P / 2SD1047P are classified by 1A hFE as follows
Rank D E
hFE 60 to 120 100 to 200
Swicthing Time Test Circuit
Collector Current, IC -- A
IC -- VCE
0 --10--5 --15 --25 --35--20 --30 --40
0
--2
--1
--3
--5
--7
--9
--4
--6
--8
--10
0 5 10 15 25 3520 30 40
0
2
3
5
7
9
1
4
6
8
10
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Collector-to-Emitter Voltage, VCE -- V
IT02167
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
IT02169
2SB817P
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
IT02170
2SD1047P
VCE=5V
IB=0
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
IT02168
2SD1047P
IB=0
40mA
80mA
20mA
200mA
240mA
160mA
120mA
0
--1
--2
--3
--4
--5
--6
--7
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
2SB817P
VCE= --5V
--80mA
--20mA
--40mA
--200mA
--240mA
--160mA
--120mA
200VR
1Ω
VCC=20V
VBE= --2V
51Ω
INPUT
OUTPUT
20Ω
1µF1µF
PW=20µs
IB1
IB2
10IB1= --10IB2=IC=1A
For PNP, the polarity is reversed.
2SB817P / 2SD1047P
No.6572-3/4
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
IT02175
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IT02177
5
--0.1
--1.0
5
7
2
3
7
--10
5
7
2
3
2
3
--1.0--0.1 23 57 --10
23 57
2SB817P
IC / IB=10
2
100
1000
5
7
2
3
2
5
7
3
--10--1.0 23 57 --100
23 57
2SB817P
f=1MHz
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
IT02176
2
100
1000
5
7
2
3
2
5
7
3
101.0 23 57 100
23 57
2SD1047P
f=1MHz
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IT02178
5
0.1
1.0
5
7
2
3
7
10
5
7
2
3
2
3
1.00.1 23 57 10
23 57
2SD1047P
IC / IB=10
--0.1 23 57
--1.0 23 57
--10 2
10
100
1000
5
7
2
3
5
7
2
3
Collector Current, IC -- A
hFE -- IC
DC Current Gain, hFE
IT02173 0.1 23 57
1.0 23 57
10 2
10
100
1000
5
7
2
3
5
7
2
3
Collector Current, IC -- A
hFE -- IC
DC Current Gain, hFE
IT02174
2SD1047P
VCE=5V
2SB817P
VCE= --5V
fT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
IT02171
1.0
10
5
7
2
3
5
2
3
--1.0--0.1 23 57 --10
23 57
2SB817P
VCE= --5V
fT -- IC
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
IT02172
1.0
10
5
7
2
3
5
2
3
1.00.1 23 57 10
23 57
2SD1047P
VCE=5V
2SB817P / 2SD1047P
No.6572-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.
PS
DC operation
10 100
253757 2
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
A S O
0.1
1.0
5
7
3
2
10
5
7
3
2
2
IT02181
10ms
100ms
1ms
2SB817P / 2SD1047P
(For PNP minus sign is omitted)
ICICP
5
--1.0
--10
5
2
3
5
7
2
3
7
--1.0--0.1 23 57 --10
23 57
Collector Current, IC -- A
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IT02179
2SB817P
IC / IB=10
5
1.0
10
5
2
3
5
7
2
3
7
1.00.1 23 57 10
23 57
Collector Current, IC -- A
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IT02180
2SD1047P
IC / IB=10
Case Tamperature, Tc -- °C
PC -- Tc
Collector Dissipation, PC -- W
IT02182
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
2SB817P / 2SD1047P
