Mar ki ng 5D
1.9
0.950.951.0
2. 4
1. 3
2.9
0.4
SOT-23 Plastic-Encapsulated Diodes
MMBD914LT1 SWITCHING DIODE
FEATURES
Power dissipation
P
D: 225 mW (Tamb=25℃)
Forward Current
I
F: 200 mA
Reverse Voltage
V
R: 75 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 75 V
Reverse voltage leakage current IR V
R=75V 2.5
µA
Forward voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode capacitance CD V
R=0V, f=1MHz 20 pF
Reverse recovery time t r r
IF=IR=10mA
VR=5V
RC=100Ω
4
nS
Unit: mm
SOT -23
Transys
Electronics
LI
M
ITE
D
