TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
250-V Phototriac Driver Output
D
Gallium-Arsenide-Diode Infrared Source
and Optically-Coupled Silicon Triac Driver
(Bilateral Switch)
D
UL Recognized... File Number E65085
D
High Isolation... 3535 V peak
D
Output Driver Designed for 115 Vac
D
Standard 6-Pin Plastic DIP
typical 115 Vac(rms) applications
D
Solenoid/Valve Controls
D
Lamp Ballasts
D
Interfacing Microprocessors to 115-Vac
Peripherals
D
Motor Controls
D
Incandescent Lamp Dimmers
description
Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac
mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case
withstands soldering temperature with no deformation. Device performance characteristics remain stable when
operated in high-humidity conditions.
absolute maximum ratings at 25°C free-air (unless otherwise noted)†
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) 3.535 kV. . . . . . . . . . . . . . . . . . . . . .
Input diode reverse voltage 3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode forward current, continuous 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output repetitive peak off-state voltage 250 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25° 100 mA. . . . . . . . . . . . . . . . . . . .
TA = 70° 50 mA. . . . . . . . . . . . . . . . . . . . .
Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) 1.2 A. . . . . .
Continuous power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototriac (see Note 3) 300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total device (see Note 4) 330 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, TJ –40°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
6
5
4
ANODE
CATHODE
NC
MAIN TERM
TRIAC SUB†
MAIN TERM
TIL30xx PACKAGE
(TOP VIEW)
NC – No internal connection
†Do not connect this terminal
logic diagram
1
2
6
4
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics 25°C free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IRStatic reverse current VR = 3 V 0.05 100 µA
VFStatic forward voltage IF = 10 mA 1.2 1.5 V
IDRM Repetitive off-state current, either direction VDRM = 250 V, See Note 5 10 100 nA
dv/dt Critical rate of rise of off-state voltage See Figure 1 12 V/µs
dv/dt(c) Critical rate of rise of commutating voltage IO = 15 mA, See Figure 1 0.15 V/µs
TIL3009 15 30
IFT
In
p
ut trigger current either direction
TIL3010
Out
p
ut su
pp
ly voltage=3V
8 15
mA
I
FT
Inp
u
t
trigger
c
u
rrent
either
direction
TIL3011
O
u
tp
u
t
s
u
ppl
y v
oltage
=
3
V
5 10
mA
TIL3012 5
VTM Peak on-state voltage, either direction ITM = 100 mA 1.8 3 V
IHHolding current, either direction 100 µA
NOTE 5: Test voltage must be applied within dv/dt rating.
PARAMETER MEASUREMENT INFORMATION
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased
until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and
increasing the frequency of V in until the phototriac remains on (latches) after the input pulse has ceased. With no further input
pulses, the frequency of Vin is then gradually decreased until the phototriac turns of f. The frequency at which turn-of f occurs
can then be used to calculate the dv/dt(c) according to the formula shown above.
dv
ń
dt
+
22
Ǹ
p
fVin
1
24
6
RL
Vin = 30 V rms
10 kΩ
VCC
Input
(see Note A) 2N3904
Figure 1. Critical Rate of Rise Test Circuit
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
1.1
1
0.9
0.8
1.2
1.3
EMITTING DIODE TRIGGER CURRENT (NORMALIZED)
vs
FREE-AIR TEMPERATURE
1.4
–50 –25 0 25 50 75 100
TA – Free-Air Temperature – °C
Emitting Diode Trigger Current (Normalized)
Figure 3
– Peak On-State Current – mA
ON-STATE CHARACTERISTICS
800
600
400
200
0
–200
–400
–600
–800–3 –2 –1 0 1 2 3
ITM
VTM – Peak On-State Voltage – V
Output tw = 80 µs
IF = 20 mA
f = 60 Hz
TA = 25°C
Figure 4
8
6
40 0.4 0.8 1.2
Off-State dv/dt – V/
10
12
1.6 2
sµ
RL – Load Resistance – kΩ
0.12
0.08
0.04
0.16
0.20
Off-State
Commutating
dv/dt
dv/dt(c)
TA = 25°C
See Figure 1
CRITICAL RATE OF RISE OF OUTPUT VOLTAGE
OFF-STATE dv/dt AND COMMUTATING dv/dt(c)
vs
LOAD RESISTANCE
Commutating dv/dt(c) – V/ sµ
9
7
5
11
13
0.14
0.10
0.06
0.18
0.22
14 0.24
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
6
4
2
025 50
Off-State dv/dt – V/
8
10
12
75 100
0.12
0.08
0.04
0
0.16
0.2
0.24
sµ
TA – Free-Air Temperature – °C
RL = 2 kΩ
RL = 510 Ω
dv/dt
dv/dt(c)
See Figure 1
OFF-STATE dv/dt AND COMMUTATING dv/dt
vs
FREE-AIR TEMPERATURE
Commutating dv/dt – V/ sµ
400
100
10
4
1
1000
40
100 400 1 k 4 k 10 k 40 k 100 k
– RMS Applied Voltage – V
f – Frequency – Hz
RMS APPLIED VOLTAGE
(FOR dv/dt(c) = 0.15 V/µs)
vs
FREQUENCY
Vin
RL = 1 kΩ
TA = 25°C
dv/dt = 2√2πf Vin
See Figure 1
dv/dt = 0.15 V/µs
Figure 6
0
0.01 0.1 1
NONREPETITIVE PEAK ON-STATE CURRENT
vs
PULSE DURATION
3
10 100
2
1
tw – Pulse Duration – ms
TA = 25°C
– Nonrepetitive Peak On-State Current – mA
ITSM
Figure 7
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
6
4RL
1
2
RL
VCC 180 Ω
120 V, 60 Hz
Rin TIL3009, TIL3012
Figure 8. Resistive Load
6
4
1
2
ZL
VCC 180 Ω
120 V, 60 Hz
Rin TIL3009, TIL3012 2.4 kΩ
0.1 µF
IGT ≤ 15 mA
Figure 9. Inductive Load With Sensitive-Gate Traic
6
4
1
2
ZL
VCC 180 Ω
120 V, 60 Hz
Rin TIL3009, TIL3012 1.2 kΩ
0.2 µF
15 mA < IGT < 50 mA
Figure 10. Inductive Load With Nonsensitive-Gate Triac
TIL3009, TIL3010, TIL3011, TIL3012
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL INFORMATION
0,25 (0.010) NOM
1
Seating Plane
0°–15°
105°
90°
2 3
6 5 4
C
LC
L
6,61 (0.260)
6,09 (0.240)
7,62 (0.300) T.P.
(see Note A)
5,46 (0.215)
2,92 (0.115)
1,78 (0.070)
0,51 (0.020)
3,81(0.150)
3,17 (0.125)
2,29 (0.090)
1,27 (0.050)
4 Places
2,54 (0.100) T.P.
(see Note A)
1,01 (0.040) MIN
0,534 (0.021)
0,381 (0.015)
6 Places
1,78 (0.070) MAX
6 Places
Index Dot
(see Note B)
9,40 (0.370)
8,38 (0.330)
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are given in millimeters and parenthetically given in inches.
Figure 11. Packaging Specifications
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
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Copyright 1998, Texas Instruments Incorporated
