TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 D D D D D D 250-V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Triac Driver (Bilateral Switch) UL Recognized . . . File Number E65085 High Isolation . . . 3535 V peak Output Driver Designed for 115 Vac Standard 6-Pin Plastic DIP typical 115 Vac(rms) applications D Solenoid/Valve Controls D Lamp Ballasts D Interfacing Microprocessors to 115-Vac Peripherals D Motor Controls D Incandescent Lamp Dimmers TIL30xx PACKAGE (TOP VIEW) ANODE CATHODE NC 1 6 2 5 3 4 MAIN TERM TRIAC SUB MAIN TERM Do not connect this terminal NC - No internal connection logic diagram 1 6 2 4 description Each device consists of a gallium-arsenide infrared-emitting diode optically coupled to a silicon phototriac mounted on a 6-pin lead frame encapsulated within an electrically nonconductive plastic compound. The case withstands soldering temperature with no deformation. Device performance characteristics remain stable when operated in high-humidity conditions. absolute maximum ratings at 25C free-air (unless otherwise noted) Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 1) . . . . . . . . . . . . . . . . . . . . . . 3.535 kV Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 V Input diode forward current, continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Output repetitive peak off-state voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V Output on-state current, total rms value (50-60 Hz, full sine wave): TA = 25 . . . . . . . . . . . . . . . . . . . . 100 mA TA = 70 . . . . . . . . . . . . . . . . . . . . . 50 mA Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 7) . . . . . . 1.2 A Continuous power dissipation at (or below) 25C free-air temperature: Infrared-emitting diode (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW Phototriac (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Total device (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330 mW Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 100C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating. 2. Derate linearly to 100C free-air temperature at the rate of 1.33 mW/C. 3. Derate linearly to 100C free-air temperature at the rate of 4 mW/C. 4. Derate linearly to 100C free-air temperature at the rate of 4.4 mW/C. Copyright 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 electrical characteristics 25C free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS IR VF Static reverse current VR = 3 V IF = 10 mA IDRM dv/dt Repetitive off-state current, either direction dv/dt(c) Static forward voltage See Note 5 Critical rate of rise of off-state voltage VDRM = 250 V, See Figure 1 Critical rate of rise of commutating voltage IO = 15 mA, See Figure 1 TIL3010 Input trigger current either direction Output supply voltage = 3 V TIL3011 TYP MAX UNIT 0.05 100 A 1.2 1.5 V 10 100 nA 12 TIL3009 IFT MIN V/s 15 30 8 15 5 10 TIL3012 VTM IH V/s 0.15 5 Peak on-state voltage, either direction ITM = 100 mA 1.8 Holding current, either direction 3 100 NOTE 5: Test voltage must be applied within dv/dt rating. PARAMETER MEASUREMENT INFORMATION VCC 1 6 Vin = 30 V rms 4 2 Input (see Note A) RL 10 k 2N3904 NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula: + 2 2 p f Vin dv dt The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs can then be used to calculate the dv/dt(c) according to the formula shown above. Figure 1. Critical Rate of Rise Test Circuit 2 mA POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 V A TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS EMITTING DIODE TRIGGER CURRENT (NORMALIZED) vs FREE-AIR TEMPERATURE ON-STATE CHARACTERISTICS 800 600 I TM - Peak On-State Current - mA 1.3 1.2 1.1 1 0.9 200 0 - 200 - 400 - 25 0 25 50 75 - 800 -3 100 -2 -1 0 1 2 VTM - Peak On-State Voltage - V TA - Free-Air Temperature - C Figure 2 3 Figure 3 CRITICAL RATE OF RISE OF OUTPUT VOLTAGE OFF-STATE dv/dt AND COMMUTATING dv/dt(c) vs LOAD RESISTANCE 14 0.24 TA = 25C See Figure 1 13 0.22 Off-State 12 0.20 11 0.18 10 0.16 9 0.14 Commutating 8 0.12 7 0.10 Commutating dv/dt(c) - V/ s 0.8 - 50 400 Output tw = 80 s IF = 20 mA f = 60 Hz TA = 25C - 600 Off-State dv/dt - V/ s Emitting Diode Trigger Current (Normalized) 1.4 0.08 6 dv/dt dv/dt(c) 5 0.06 0.04 4 0 0.4 1.6 0.8 1.2 RL - Load Resistance - k 2 Figure 4 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 TYPICAL CHARACTERISTICS OFF-STATE dv/dt AND COMMUTATING dv/dt vs FREE-AIR TEMPERATURE 0.24 12 dv/dt dv/dt(c) See Figure 1 0.2 8 0.16 6 0.12 4 0.08 RL = 510 2 0 25 RL = 2 k Commutating dv/dt - V/ s Off-State dv/dt - V/ s 10 0.04 50 75 TA - Free-Air Temperature - C 0 100 Figure 5 RMS APPLIED VOLTAGE (FOR dv/dt(c) = 0.15 V/s) vs FREQUENCY Vin - RMS Applied Voltage - V 400 I TSM - Nonrepetitive Peak On-State Current - mA 1000 NONREPETITIVE PEAK ON-STATE CURRENT vs PULSE DURATION RL = 1 k TA = 25C dv/dt = 2 2f Vin See Figure 1 100 40 dv/dt = 0.15 V/s 10 4 1 100 400 1k 4k 10 k 40 k 100 k 3 TA = 25C 2 1 0 0.01 Figure 6 4 0.1 1 10 tw - Pulse Duration - ms f - Frequency - Hz Figure 7 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 100 TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 APPLICATION INFORMATION Rin VCC RL TIL3009, TIL3012 1 6 180 120 V, 60 Hz 2 4 RL Figure 8. Resistive Load Rin VCC ZL TIL3009, TIL3012 1 6 180 2.4 k 0.1 F 2 120 V, 60 Hz 4 IGT 15 mA Figure 9. Inductive Load With Sensitive-Gate Traic Rin VCC ZL TIL3009, TIL3012 1 6 180 1.2 k 0.2 F 2 120 V, 60 Hz 4 15 mA < IGT < 50 mA Figure 10. Inductive Load With Nonsensitive-Gate Triac POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 TIL3009, TIL3010, TIL3011, TIL3012 OPTOCOUPLERS/OPTOISOLATORS SOES027A - DECEMBER 1987 - REVISED APRIL 1998 MECHANICAL INFORMATION 9,40 (0.370) 8,38 (0.330) CL CL 6 5 4 1 2 3 Index Dot (see Note B) 7,62 (0.300) T.P. (see Note A) 6,61 (0.260) 6,09 (0.240) 1,78 (0.070) MAX 6 Places 5,46 (0.215) 2,92 (0.115) Seating Plane 1,78 (0.070) 0,51 (0.020) 105 90 0- 15 3,81(0.150) 3,17 (0.125) 0,25 (0.010) NOM NOTES: A. B. C. D. 2,29 (0.090) 1,27 (0.050) 4 Places 2,54 (0.100) T.P. (see Note A) 0,534 (0.021) 0,381 (0.015) 6 Places Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed. Pin 1 identified by index dot. The dimensions given fall within JEDEC MO-001 AM dimensions. All linear dimensions are given in millimeters and parenthetically given in inches. Figure 11. Packaging Specifications 6 1,01 (0.040) MIN POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER'S RISK. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI's publication of information regarding any third party's products or services does not constitute TI's approval, warranty or endorsement thereof. Copyright 1998, Texas Instruments Incorporated