1N746
THRU
1N759
0.5W Silicon Planar
Zener Diodes
Features
Zener Voltage 3.3V to 12V
Silicon Planar Power Zener Diodes
Standard zener voltage tolerance is ±10%, Add suffix A for
±5% tolerance, "C" for
Maximum Ratings
Symbol Value Units
Zener Current See Table 1
Power Dissipation
@T
A=50oCPtot 500 mW
Junction Temperature TJ200 o
C
Storage Temperature
Range TSTG -65 to 200 o
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Maximum Unit
Thermal resistance 300 oC/W
Forward Voltage
@I
F=200mA VF1.5 V
NOTE:
1) Valid provided that a distance of 8mm from case are kept
at ambient temperature
2) Power derating: 4.0mW/oC above 50oC
Case: DO-35 glass case
Marking : Cathode band and type number
Weight: Approx. 0.13 gram
A
B
C
D
D
Cathode
Mark
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
DO-35
R
q
JA
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MCC
Revision: 8 2008/01/01
TM
Micro Commercial Components
±2% tolerance, "D" for ±1% tolerance,
www.mccsemi.com
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Mechanical Data
A part number suffix "P" means RoHs Compliant
NORMAL
ZENER
VOLTAGE
Vz@ Izt
TEST
CURRENT
Izt
MAXIMUM
ZENER
IMPEDANCE
Zzt @ Izt
MAXIMUM REVERSE
LEAKAGE CURRENT
Ir @ Vr=1V
MAXIMUM
ZENER
CURRENT
I
ZM
TYPICAL TEMP.
COEFFICIENT
MCC PART
NUMBER
VOLTS mA OHMS uA @25oC uA @125oCmA %/
oC
1N746 3.3 20 28 10 30 110 -.066
1N747 3.6 20 24 10 30 100 -.058
1N748 3.9 20 23 10 30 95 -.046
1N749 4.3 20 22 2 30 85 -.033
1N750 4.7 20 19 2 30 75 -.015
1N751 5.1 20 17 1 20 70 ±.010
1N752 5.6 20 11 1 20 65 +.030
1N753 6.2 20 7.0 0.1 20 60 +.049
1N754 6.8 20 5.0 0.1 20 55 +.053
1N755 7.5 20 6.0 0.1 20 50 +.057
1N756 8.2 20 8.0 0.1 20 45 +.060
1N757 9.1 20 10 0.1 20 40 +.061
1N758 10 20 17 0.1 20 35 +.062
1N759 12 20 30 0.1 20 30 +.062
Note:
1) Tested with pulses t p
= 20ms
2) Valid provided that leads are kept at ambient temperature at a
distance of 8mm from case.
3) Zener impedance derived by superimposing on IZT, a 60 Hz, rms
ac current equal to 10% IZT (2 mA ac)
4) Allowance has been made for the increase in VZdue to ZZand for
the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400mW.
MCC
1N746 thru 1N759
Revision: 8 2008/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: 8 2008/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
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Ordering Information
Device Packing
(Part Number)-TP Tape&Reel; 10Kpcs/Reel
(Part Number)-AP Ammo Packing;5Kpcs/AmmoBox
(Part Number)-BP Bulk;500pcs/Bag