MOSFET - P-Channel, QFET) -200 V, -11.5 A, 470 mW FQB12P20 General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. www.onsemi.com VDSS RDS(ON) MAX ID MAX -200 V 0.47 @ -10 V -11.5 A S Features * * * * * * * G -11.5 A, -200 V, RDS(on) = 0.47 @ VGS = -10 V Low Gate Charge (Typical 31 nC) Low Crss (typical 30 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability These Devices are Pb-Free and are RoHS Compliant D P-CHANNEL MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol VDSS ID IDM VGSS Parameter FQB12P20 Unit Drain-Source Voltage -200 V Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) -11.5 A -7.27 A Drain Current - Pulsed (Note 1) -46 A Gate-Source Voltage +30 V 810 mJ -11.5 A EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (TA = 25C) * 3.13 W Power Dissipation (TC = 25C) - Derate above 25C 120 W 0.96 W/C -55 to +150 C 300 C PD TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *When mounted on the minimum pad size recommended (PCB Mount) 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2 mH, IAS = -11.5 A, VDD = -50 V, RG = 25 , Starting TJ = 25C 3. ISD -11.5 A, di/dt 300 A/s, VDD BVDSS, Starting TJ = 25C (c) Semiconductor Components Industries, LLC, 2008 December, 2019 - Rev. 2 1 D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FQB 12P20 FQB12P20 $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = Digit Date Code = Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: FQB12P20/D FQB12P20 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Typ Max Unit RJC Thermal Resistance, Junction-to-Case Parameter - 1.04 C/W RJA Thermal Resistance, Junction-to-Ambient * - 40 C/W RJA Thermal Resistance, Junction-to-Ambient - 62.5 C/W *When mounted on the minimum pad size recommended (PCB Mount) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current -200 - - V ID = -250 A, Referenced to 25C - - - V/C VDS = -200 V, VGS = 0 V - - -1 A VDS = -160 V, TC = 125C - - -10 A VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V - - -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V - - 100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -3.0 - -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.75 A - 0.36 0.47 Forward Transconductance VDS = -40 V, ID = -5.75 A (Note 4) - 6.4 - S VDS = -25 V, VGS = 0 V, f = 1.0 MHz - 920 1200 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance - 190 250 pF Crss Reverse Transfer Capacitance - 30 40 pF - 20 50 ns - 195 400 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDD = -100 V, ID = -11.5 A, RG = 25 (Note 4, 5) Turn-Off Delay Time - 40 90 ns tf Turn-Off Fall Time - 60 130 ns Qg Total Gate Charge - 31 40 nC Qgs Gate-Source Charge - 8.1 - nC Qgd Gate-Drain Charge - 16 - nC VDS = -160 V, ID = -11.5 A, VGS = -10 V (Note 4, 5) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current - - -11.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - -46 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.5 A - - -5.0 V trr Reverse Recovery Time - 180 - ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -11.5 A, dIF / dt = 100 A/s (Note 4) - 1.44 - C IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature www.onsemi.com 2 FQB12P20 TYPICAL CHARACTERISTICS VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom: -5.5 V 101 -ID, Drain Current (A) -ID, Drain Current (A) Top: 100 101 150C -55C 100 25C Notes: 1. VDS = -40 V 2. 250 s Pulse Test Notes: 1. 250 s Pulse Test 2. TC = 25C 10-1 10-1 100 10-1 101 2 4 -VDS, Drain-Source Voltage (V) 10 Figure 2. Transfer Characteristics 2.0 -IDR, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance () 8 -VGS, Gate-Source Voltage (V) Figure 1. On Characteristics 1.5 VGS = - 10 V 1.0 VGS = - 20 V 0.5 101 100 150C Notes: 1. VGS = 0 V 2. 250 s Pulse Test 25C Note: TJ = 25C 0.0 0 10 20 30 10-1 0.0 40 0.5 -ID, Drain Current (A) 2400 2.0 2.5 3.0 12 -VGS, Gate-Source Voltage (V) 1600 Ciss 1200 Coss 800 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 1.0 -VSD, Source-Drain Voltage (V) Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance (pF) 6 Crss 400 VDS = -40 V 10 VDS = -100 V VDS = -160 V 8 6 4 2 Note: ID = 11.5 A 0 10-1 100 0 101 -VDS, Drain-Source Voltage (V) 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 35 FQB12P20 TYPICAL CHARACTERISTICS (continued) 2.5 RDS(on), (Normalized) Drain-Source On-Resistance () -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 Notes: 1. VGS = 0 V 2. ID = 250 A 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 Notes: 1. VGS = -10 V 2. ID = -5.75 A 0.0 -100 200 -50 0 50 100 150 TJ, Junction Temperature (C) TJ, Junction Temperature (C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 200 12 Operation in This Area is Limited by RDS(on) -ID, Drain Current (A) 10 100 s 1 ms 101 10 ms DC 100 Notes: 1. TC = 25C 2. TJ = 150C 3. Single Pulse 10-1 100 8 6 4 2 101 0 102 25 50 75 100 125 -VDS, Drain-Source Voltage (V) TC, Case Temperature (C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 ZJC (t), Thermal Response ID, Drain Current (A) 102 D = 0.5 0.2 10-1 Notes: 1. ZJC (t) = 1.04C/W Max. 2. Duty Factor, D = t1 / t2 3. TJM - TC = PDM * ZJC (t) 0.1 0.05 0.02 P DM 0.01 single pulse t1 10-2 10-5 10-4 10-3 10-2 10-1 t1, Square Wave Pulse Duration (s) Figure 11. Capacitance Characteristics www.onsemi.com 4 t2 100 101 150 FQB12P20 12 V 200 nF V GS Same Type as DUT 50 k Qg -10 V 300 nF V DS V GS Q gs Q gd DUT -3 mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL V DD VGS t on td(on) VGS t off tr t d(off) tf 10% DUT -10 V VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + VDS tp ID RG VDD DUT -10 V BV DSS 1 2 LI 2 AS BV DSS * V DD VDD VDS (t) ID (t) IAS tp BVDSS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 5 Time FQB12P20 + VDS DUT _ I SD L Driver RG Compliment of DUT (N-Channel) VGS VGS (Driver) VDD S dv/dt controlled by RG S ISD controlled by pulse period D= Gate Pulse Width Gate Pulse Period 10 V Body Diode Reverse Current ISD IRM (DUT) di/dt IFM , Body Diode Forward Current VSD VDS (DUT) Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms PACKAGE MARKING AND ORDERING INFORMATION Device FQB12P20TM Marking Package Reel Size Tape Width Shipping FQB12P20 D2PAK (Pb-Free) 330 mm 24 mm 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb-Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. D2PAK-3 (TO-263, 3-LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 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