160
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2562
150
150
5
15
1
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2562
100max
100max
150min
5000min∗
2.5max
3.0max
70typ
120typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=150V
VEB=5V
IC=30mA
VCE=4V, IC=10A
IC=10A, IB=10mA
IC=10A, IB=10mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
Darlington 2SD2562
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
Safe Operating Area (Single Pulse)
0
0
10
5
15
246
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
50mA
I
B
=0.3mA
0.5mA
0.8mA
2mA
1.0mA
3mA
10mA
1.5mA
VCE(sat)–IB Characteristics
(Typical)
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=.15A
IC=.10A
IC=.5A
IC–VBE Temperature Characteristics
(Typical)
0
15
5
10
0 2 2.21
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Characteristics
(Typical)
Collector Current IC(A)
02 0.5 1 10 155
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
Typ
02 0.5 1 10 155
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
hFE–IC
Temperature Characteristics (Typical)
Collector Current IC(A)
125˚C
–30˚C
25˚C
θj-a–t Characteristics
0.1
1.0
3.0
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
fT–IE Characteristics
(Typical)
(VCE=12V)
Emitter Current IE(A)
–0.05–0.02 –01 –0.5 –1 –5 –10
0
40
20
60
80
Cut-off Frequency fT(MHZ)
Pc–Ta Derating
100
80
60
40
20
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
40
RL
(Ω)
4
IC
(A)
10
VBB2
(V)
–5
IB2
(mA)
–10
ton
(
µ
s)
0.8typ
tstg
(
µ
s)
4.0typ
tf
(
µ
s)
1.2typ
IB1
(mA)
10
VBB1
(V)
10
B
C
E
(70Ω)
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
