BAT46W-V
Document Number 85663
Rev. 1.4, 05-Aug-10
Vishay Semiconductors
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17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features very low turn-on
voltage and fast switching.
• This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharges.
• This diode is also available in the DO-35 case with
the type designation BAT46 and in the MiniMELF
case with the type designation LL46.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Part Ordering code Type Marking Remarks
BAT46W-V BAT46W-V-GS18 or BAT46W-V-GS08 L6 Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 100 V
Forward continuous current IF1501) mA
Repetitive peak forward current tp < 1 s, δ < 0.5 IFRM 3501) mA
Surge forward current tp < 10 ms IFSM 7501) mA
Power dissipation1) Tamb = 65 °C Ptot 1501) mW
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Document Number 85663
Rev. 1.4, 05-Aug-10
BAT46W-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
2) Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 3001) K/W
Junction temperature Tj125 °C
Ambient operating temperature range Tamb - 55 to + 125 °C
Storage temperature range Tstg - 55 to + 150 °C
Parameter Test condition Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 100 µA (pulsed) V(BR) 100 V
Leakage current2)
VR = 1.5 V IR0.5 µA
VR = 1.5 V, Tj = 60 °C IR5µA
VR = 10 V IR0.8 µA
VR = 10 V, Tj = 60 °C IR7.5 µA
VR = 50 V IR2µA
VR = 50 V, Tj = 60 °C IR15 µA
VR = 75 V IR5µA
VR = 75 V, Tj = 60 °C IR20 µA
Forward voltage2)
IF = 0.1 mA VF250 mV
IF = 10 mA VF450 mV
IF = 250 mA VF1000 mV
Diode capacitance VR = 0 V, f = 1 MHz CD10 pF
VR = 1 V, f = 1 MHz CD6pF
Figure 1. Typical Instantaneous Forward Characteristics
I - Forward Current (mA)
F
1000
100
10
1
0.1
0.01 1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F - Forward Voltage (V)
= 60 °CT
j
25 °C
Figure 2. Typical Reverse Characteristics
18547
I- Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
VR- Reverse Voltage (V)
Tj= 60 °C
Tj= 25 °C
BAT46W-V
Document Number 85663
Rev. 1.4, 05-Aug-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Package Dimensions in millimeters (inches): SOD-123
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
200
18548T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P - Power Dissipation (mW)
tot
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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Revision: 12-Mar-12 1Document Number: 91000
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