SPA11N60C3 - Infineon Technologies

2009-11-27

Rev.3.2 Page 1

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

RDS(on) 0.38 Ω

ID11 A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• High peak current capability

• Improved transconductance

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

PG-TO262PG-TO220FP PG-TO220

P-TO220-3-31

123

Marking

11N60C3

Type Package Ordering Code

SPP11N60C3 PG-TO220 Q67040-S4395

SPI11N60C3 PG-TO262 Q67042-S4403

SPA11N60C3 Q67040-S4408

Maximum Ratings

Parameter Symbol Value Unit

SPA

Continuous drain current

= 25 °C

= 100 °C

Pulsed drain current, t

limited by T

jmax

Dpuls

33 33 A

Avalanche energy, single pulse

=5.5A, V

=50V

340 340 mJ

Avalanche energy, repetitive t

limited by T

jmax2)

=11A, V

=50V

0.6 0.6

Avalanche current, repetitive t

limited by T

jmax

11 11 A

Gate source voltage static V

±20 ±20 V

Gate source voltage AC (f >1Hz) V

±30 ±30

Power dissipation,

= 25°C

tot

125 33 W

SPP_I

Operating and storage temperature T

stg

-55...+150 °C

Reverse diode dv/dt dv/dt 15 V/ns

11N60C3

PG-TO220FP Q67040-S4408

SPA11N60C3E8185

11N60C3

PG-TO220

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Rev.3.2 Page 2

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 1 K/W

Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s 4)

Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=11A - 700 -

Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1 3 3.9

Zero gate voltage drain current IDSS VDS=600V, VGS=0V,

Tj=25°C

Tj=150°C

0.1

100

µA

Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=7A

Tj=25°C

Tj=150°C

0.34

0.92

0.38

Ω

Gate input resistance RGf=1MHz, open drain - 0.86 -

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=7A

- 8.3 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 1200 - pF

Output capacitance Coss - 390 -

Reverse transfer capacitance Crss - 30 -

Effective output capacitance,5)

energy related

Co(er) VGS=0V,

VDS=0V to 480V

- 45 -

Effective output capacitance,6)

time related

Co(tr) - 85 -

Turn-on delay time td(on) VDD=380V, VGS=0/10V,

ID=11A,

RG=6.8Ω

- 10 - ns

Rise time tr- 5 -

Turn-off delay time td(off) - 44 70

Fall time tf- 5 9

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=11A - 5.5 - nC

Gate to drain charge Qgd - 22 -

Gate charge total QgVDD=480V, ID=11A,

VGS=0 to 10V

- 45 60

Gate plateau voltage V(plateau) VDD=480V, ID=11A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Soldering temperature for TO-263: 220°C, reflow

5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 11 A

Inverse diode direct current,

pulsed ISM - - 33

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=480V, IF=IS ,

diF/dt=100A/µs

- 400 600 ns

Reverse recovery charge Qrr - 6 - µC

Peak reverse recovery current Irrm - 41 - A

Peak rate of fall of reverse

recovery current

dirr/dt Tj=25°C - 1200 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPA SPA

Rth1 0.015 0.15 K/W Cth1 0.0001878 0.0001878 Ws/K

Rth2 0.03 0.03 Cth2 0.0007106 0.0007106

Rth3 0.056 0.056 Cth3 0.000988 0.000988

Rth4 0.197 0.194 Cth4 0.002791 0.002791

Rth5 0.216 0.413 Cth5 0.007285 0.007401

Rth6 0.083 2.522 Cth6 0.063 0.412

SPP_I SPP_I

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

100

110

120

140

SPP11N60C3

Ptot

2 Power dissipation FullPAK

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

Ptot

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

4 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

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Rev.3.2 Page 6

2SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

5 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1

-4

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

6 Transient thermal impedance FullPAK

ZthJC = f(tp)

parameter: D = tp/t

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

-4

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

7 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 3 6 9 12 15 18 21 V27

VDS

4,5V

5,5V

6,5V

20V

10V

8 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 5 10 15 V 25

VDS

4.5V

5.5V

20V

7.5V

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Rev.3.2 Page 7

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 2 4 6 8 10 12 14 16 A 20

0.4

0.6

0.8

1.2

1.4

1.6

Ω

RDS(on)

4V 4.5V 5V 5.5V 6V

6.5V

20V

10 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 7 A, VGS = 10 V

-60 -20 20 60 100 °C 180

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

Ω

2.1 SPP11N60C3

RDS(on)

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 2 4 6 8 10 12 V 15

VGS

25°C

150°C

12 Typ. gate charge

VGS =f (QGate)

parameter: ID = 11 A pulsed

0 10 20 30 40 50 nC 70

QGate

16 SPP11N60C3

VGS

0,8 VDS max

DS max

0,2

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

13 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

SPP11N60C3

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

14 Typ. switching time

t = f(ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=6.8Ω

0 2 4 6 8 A 12

td(off)

td(on)

15 Typ. switching time

t = f (RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=11 A

0 10 20 30 40 50 Ω70

100

150

200

250

350

td(off)

td(on)

16 Typ. drain current slope

di/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=11A

0 20 40 60 80 Ω120

500

1000

1500

2000

A/µs

3000

di/dt

di/dt(on)

di/dt(off)

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Rev .3.2 Page 9

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

17 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=11A

0 10 20 30 40 50 Ω70

100

110

120

V/ns

140

dv/dt

dv/dt(off)

dv/dt(on)

18 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=6.8Ω

0 2 4 6 8 A 12

0.005

0.01

0.015

0.02

0.025

0.03

mWs

0.04

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

19 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=11A

0 10 20 30 40 50 Ω70

0.04

0.08

0.12

0.16

mWs

0.24

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

20 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

IAR

Tj(START)=125°C

Tj(START)=25°C

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

21 Avalanche energy

EAS = f(Tj)

par.: ID = 5.5 A, VDD = 50 V

20 40 60 80 100 120 °C 160

100

150

200

250

350

EAS

23 Avalanche power losses

PAR = f (f )

parameter: EAR=0.6mJ

10 410 510 6

100

150

200

300

PAR

22 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

540

560

580

600

620

640

660

680

720

SPP11N60C3

V(BR)DSS

24 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 400 V 600

VDS

Ciss

Coss

Crss

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SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

25 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 400 V 600

VDS

0.5

1.5

2.5

3.5

4.5

5.5

µJ

7.5

Eoss

Definition of diodes switching characteristics

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2009-11-27Rev. 3.2 Page 12

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

PG-TO-220-3-1, PG-TO-220-3-21

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2009-11-27

Rev. 3.2 Page 13

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

PG-TO-220-3-31/3-111: Outline/ Fully isolated package (2500VAC; 1 minute).

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2009-11-27Rev. 3.2 Page 14

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

PG-TO-262-3-1 (I²-PAK)

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2009-11-27Rev. 3.2 Page 15

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

PG-TO220-3-36:Outline fully isolated package (2500VAC; 1 minute)

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2009-11-27

Rev.3.2 Page 16

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

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