STB60N03L-10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMIRARY DATA
■TYPICAL RDS(on) = 0.0085 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPE TITIV E AVA LANCHE DATA AT 100oC
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■175 oC OPERATING TEMPERATURE
■APPLICATION ORIENTED
CHARACTERIZATION
■THRO UG H-HO LE I2PA K (TO -262) POW E R
PACKA GE IN TU BE (SUF F IX "-1")
■SURFACE-MOUNTI NG D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
■HIGH CURRE NT , HIGH SP E ED SW IT CHING
■SOLE NO ID AND RELAY DRIVER S
■REGULATORS
■DC-DC & DC-AC CO NVE RT E RS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATI C DIAG RAM
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain- gate Voltage (RGS = 20 kΩ)30V
V
GS Gate-source Voltage ± 20 V
IDDrain Current (continuous) at Tc = 25 oC60A
I
D
Drain Current (continuous) at Tc = 100 oC42A
I
DM(•) Drain Current (pulsed) 240 A
Ptot Total Dissipation at Tc = 25 oC 150 W
Derating Factor 1 W/oC
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulse width limited by safe operati ng area
March 1996
TYPE VDSS RDS(on) ID
STB60N03L-10 30 V < 0.01 Ω60 A
123
13
I2PAK
TO-262 D2PAK
TO-263
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THERMAL DATA
Rthj-case
Rthj-amb
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALAN CHE CHARACT ERI STICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%) 60 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V) 600 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%) 150 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 42 A
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA VGS = 0 30 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating x 0.8 Tc = 125 o C250
1000 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.7 2.5 V
RDS(on) Static Drain-source On
Resistance VGS = 10 V ID = 30 A
VGS = 10 V ID = 30 A Tc = 100 oC
VGS = 5 V ID = 30 A Tc = 25 oC
VGS = 5 V ID = 30 A Tc = 100 oC
0.0085
0.0012
0.01
0.02
0.015
0.03
Ω
Ω
Ω
Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V 60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance VDS > ID(on) x RDS(on)max ID = 30 A 30 50 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 3500
1200
450
pF
pF
pF
STB60N03L-10
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ELE CT RICAL CHAR ACT ERISTI CS (continued)
SWI TCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD = 15 V ID = 38 A
RG = 4.7 Ω VGS = 5 V 40
400 ns
ns
(di/dt)on Turn-on Current Slope VDD = ID =
RG = Ω VGS = V A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10 V ID = 60 A VGS = 15 V 130 nC
SWI TCHING O FF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 24 V ID = 75 A
RG = 4.7 Ω VGS = 5 V
(see test circuit, figure 5)
60
240
310
ns
ns
ns
SOUR CE DRAI N DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
60
240 A
A
VSD (∗) Forward On Voltage ISD = 60 A VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 75 A di/dt = 10 A/µs
VDD = 0 V Tj = 150 oC100
0.25
5
ns
µC
A
(∗) Pulsed: P ulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limit e d by safe operating area
STB60N03L-10
3/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
e 2.44 2.64 0.096 0.104
E 10 10.28 0.393 0.404
L 13.2 13.5 0.519 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054
L
L1
B2
B
D
EA
C2
C
A1
L2
e
TO-262 (I2PAK) MECHANICAL DATA
STB60N03L-10
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 9 9.35 0.354 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068
L2
L3
L
B2
B
G
EA
C2
D
C
A1
TO-263 (D2PAK) MECHANICAL DATA
STB60N03L-10
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in this publicat ion ar e subj ec t to change without n o t ice. This p u bli ca tion su p e rsed e s and r epla ces all inf or mat i on pr ev io us ly supplied.
SGS-THOMSO N Microelectronics products are not authorized for use as critical components in life support devices or systems without exp ress
written approv al o f SG S- THOM SON M icroele cton ics.
© 1995 SGS-TH OM SO N Microe lectronics - All Right s Reser ved
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STB60N03L-10
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