UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 1 TO-220 TO-262 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. TO-220F FEATURES * V CEO(SUS) = 400 V * Reverse bias SOA with inductive loads @ T C = 100 * Inductive switching matrix 2 to 4 Amp, 25 and 100 t C @ 3A, 100 is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information TO-251 1 1 TO-126 TO-263 APPLICATIONS * Switching regulator's, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 1 1 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13005L-x-T60-K MJE13005G-x-T60-K MJE13005L-x-TA3-T MJE13005G-x-TA3-T MJE13005L-x-TF3-T MJE13005G-x-TF3-T MJE13005L-x-TM3-T MJE13005G-x-TM3-T MJE13005L-x-TN3-T MJE13005G-x-TN3-T MJE13005L-x-TN3-T MJE13005G-x-TN3-T MJE13005L-x-TQ3-R MJE13005G-x-TQ3-R MJE13005L-x-TQ3-T MJE13005G-x-TQ3-T MJE13005L-x-T2Q-T MJE13005G-x-T2Q-T MJE13005L-x-T60-K Package TO-126 TO-220 TO-220F TO-251 TO-252 TO-252 TO-263 TO-263 TO-262 Pin Assignment 1 2 3 B C E B C E B C E B C E B C E B C E B C E B C E B C E Packing Bulk Tube Tube Tube Tube Tape Reel Tape Reel Tube Tube (1)T: Tube, K: Bulk, R: Tape Reel (1)Packing Type (2)Package Type (3)Rank (4)Lead Free www.unisonic.com.tw Copyright (c) 2013 Unisonic Technologies Co., Ltd (2) T60: TO-126, TA3: TO-220, TF3: TO-220F, (2) TM3: TO-251, TQ3: TO-263, T2Q: TO-262 (2) TN3: TO-252 (3) x: refer to Classification of hFE1 (4) L: Lead Free, G: Halogen Free 1 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (V BE =0) Collector-Base Voltage Emitter Base Voltage SYMBOL V CEO(SUS) V CES V CBO V EBO IC I CM IB I BM IE I EM RATINGS 400 700 700 9 4 8 2 4 6 12 40 50 UNIT V V V V A A A A A A SYMBOL RATINGS 89 110 UNIT Continuous Peak (1) Continuous Base Current Peak (1) Continuous Emitter Current Peak (1) TO-126/TO-220F TO-251/TO-252 Power Dissipation at T A =25 W TO-220/TO-263 75 TO-262 PD TO-126/TO-220F 320 TO-251/TO-252 400 Derate above 25 mW/ TO-220/TO-263 600 TO-262 Operating and Storage Junction Temperature T J , T STG -65 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Collector Current THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-126 TO-251/TO-252 TO-220/TO-263 TO-262/TO-220F TO-126/TO-220F TO-251/TO-252 TO-220/TO-263 TO-262 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw JA /W 62.5 JC 3.125 2.5 /W 1.67 2 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (T C =25, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (Note 1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with Base Reverse Biased ON CHARACTERISTICS (Note 1) SYMBOL V CEO(SUS) I C =10mA , I B =0 V CBO =Rated Value, V BE(OFF) =1.5V I CBO V CBO =Rated Value, V BE(OFF) =1.5V, T C =100 I EBO V EB =9V, I C =0 TYP MAX UNIT 400 V 1 mA 5 1 mA See Fig. 11 RBSOA See Fig. 12 Collector-Emitter Saturation Voltage V CE(SAT) Base-Emitter Saturation Voltage V BE (SAT) I C =0.5A, V CE =5V I C =1A, V CE =5V I C =2A, V CE =5V I C =1A, I B =0.2A I C =2A, I B =0.5A I C =4A, I B =1A I C =2A, I B =0.5A, Ta=100 I C =1A, I B =0.2A I C =2A, I B =0.5A I C =2A, I B =0.5A, T C =100 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fT I C =500mA, V CE =10V, f=1MHz Output Capacitance C OB V CB =10V, I E =0, f=0.1MHz SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tD V CC =125V, I C =2A, Rise Time tR I B1 =I B2 =0.4A, Storage Time tS t P =25s, Duty Cycle1% Fall Time tF Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle10% Note: 2. Pulse Test: P W =300s, Duty Cycle2% MIN I S/B h FE1 h FE2 h FE3 DC Current Gain TEST CONDITIONS 15 10 8 50 60 40 0.5 0.6 1 1 1.2 1.6 1.5 4 MHz pF 65 0.025 0.3 1.7 0.4 V V V V V V V s s s s 0.1 0.7 4 0.9 CLASSIFICATION OF h FE1 RANK RANGE A 15 ~ 20 B 20 ~ 25 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 25 ~ 30 D 30 ~ 40 E 40 ~ 50 3 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching +5V Vcc 33 1N4933 MJE210 L Test Circuits 0.001F 33 1N4933 5V Pw 2N2222 DUTY CYCLE10% tr, tf10ns +125V 1k +5V 1N4933 Vclamp Ic RB 1k 68 IB Rc 5.1k *SELECTED FOR1kV T.U.T. -4.0V MJE200 47 100 1/2W Coil Data : V CC =20V FERROXCUBE core #6656 Full Bobbin ( ~ 16 Turns) #16 SCOPE D1 51 2N2905 Note: PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 TUT RB VCE 1k 0.02F 270 Circuit Values MR826* -VBE(off) GAP for 200H/20 A L COIL =200H V CLAMP =300V V CC =125V R C =62 D1=1n5820 or Equiv. RB=22 OUTPUT WAVEFORMS Test Waveforms tF CLAMPED IC IC(PK) t1 VCE t1 Adjusted to Obtain Ic t tf LCOIL(ICPK) t 1= VCC VCE or VCLAMP TIME +10 V tF UNCLAMPED t2 t2 t LCOIL(ICPK) t2= VCLAMP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25S 0 Test Equipment Scope-Tektronics 475 or Equivalent -8V tR, tF<10ns Duty Cycly=1.0% RB and RC adjusted for desired IB and IC 4 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE Fig. 1 Turn-On Time Fig. 2 Turn-Off Time 1 10 Vcc=125V Ic/IB=5 TJ=25 0.5 2 Time, t () Time, t () tR 0.2 Vcc=125V Ic/IB=5 TJ=25 tS 5 0.1 0.05 tD @ VBE(OFF)=5V 1 0.5 tF 0.3 0.2 0.02 0.01 0.04 0.2 0.1 0.4 1 0.1 0.04 4 2 0.2 0.1 Collector Current, IC (A) 0.5 1 2 4 Collector Current, IC (A) Transient Thermal Resistance, r(t) (Normalized) Fig. 3 Typical Thermal Response [ ZJC(t)] 1 0.7 D=0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 P (PK) ZJC(t)=r(t) RJC RJC=1.67/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 Tj(pk)-TC=P(pk) ZJC(t) 0.2 1 0.5 2 5 10 20 t1 t2 DUTY CYCLE, D=t1/t2 10 0 50 Time, t (ms) Fig. 4 Forward Bias Safe Operating Area 20 0 4 clamp TC V100 IB1=2.0A 5 2 5 ms 500s Collector Current, IC(PK) (A) Collector Current, IC (A) 1k Fig. 5 Reverse Bias Switching Safe Operating Area 10 dc 1 0.5 1ms 0.2 0.1 0.05 0.02 0.01 50 0 3 2 VBE(OFF)=9V 1 UTC MJE13005 5V 3V UTC MJE13005 5 7 10 20 30 50 70 100 500 200 300 0 1.5V 0 100 200 300 400 500 600 700 800 400 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector-Emitter Clamp Voltage, VCE (V) 5 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE(Cont.) Fig. 6 Forward Bias Power Derating 1 SECOND BREAKDOWN DERATING Power Derating Factor 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC () UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C -V CE limits of the transistor that must be observed for reliable operation; e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 4 is based on T C = 25; T J(PK) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C 25. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case temperature by using the appropriate curve on Fig. 6. T J(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete RBSOA characteristics. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 8. Collector Saturation Region Figure 7. DC Current Gain 2 100 DC Current Gain, hFE 50 Collector-Emitter Voltage, VCE (V) TJ=150 70 25 30 20 -55 1 0 VCE=2V - - - - - -VCE=5V 7 5 0.04 0.06 0.2 0.1 0.4 0.6 2 1 TJ=25 1.6 2A Ic=1A 0.4 0 4 0.03 0.05 Figure 9. Base-Emitter Voltage 25 0.7 25 0.5 150 0.3 0.2 0.4 0.6 2 1 4 Collector-Emitter Saturation Voltage, VCE(SAT) (V) Base-Emitter Voltage, VBE (V) TJ=-55 0.1 3 Ic/IB=4 0.45 TJ=-55 0.35 25 0.25 0.15 150 0.05 0.04 0.06 0.2 0.1 0.4 0.6 1 2 4 Figure 12. Capacitance Figure 11. Collector Cutoff Region 2k VCE=250V Cib 1k 1k Tj=150 Capacitance, C (pF) Collector Current, IC (A) 2 Collector Current, IC (A) 10k 125 100 75 10 50 300 200 100 50 25 0 +0.2 +0.4 +0.6 Base-Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Cob 30 FORWARD REVERSE -0.2 700 500 70 1 0.1 -0.4 1 0.55 Collector Current, IC (A) 100 0.5 0.7 Figure 10. Collector-Emitter Saturation Voltage VBE(SAT) @ IC/IB=4 - - - - - -VBE(ON) @ VCE=2V 0.04 0.06 0.2 0.3 0.1 Base Current, IB (A) 1.3 0.9 4A 0.8 Collector Current, IC (A) 1.1 3A 1.2 20 0.3 0.5 1 3 5 10 30 50 100 300 Reverse Voltage, VR (V) 8 of 9 QW-R203-018. K MJE13005 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R203-018. K