UNISONIC TECHNO LOGIES CO., LTD
MJE13005 NPN SILICON TRAN SISTOR
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Copyright © 2013 Unisonic Technologies Co., Ltd QW-R203-018. K
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-
speed
power switching inductive circuits where fall time is critical.
They are particularly suited f or 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 an d 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
TO-263
TO-126
1
TO-262
1
TO-220
TO-220F
1
1
TO-251
1
1
1
TO-252
ORDERING INFORMATION
Ordering Number
Package
Pin Assignment
Packing
Lead Free
Halogen Free
1
2
3
MJE13005L-x-T60-K MJE13005G-x-T60-K TO-126 B C E Bulk
MJE13005L-x-TA3-T MJE13005G-x-TA3-T TO-220 B C E Tube
MJE13005L-x-TF3-T
MJE13005G-x-TF3-T
B
C
E
Tube
MJE13005L-x-TM3-T
MJE13005G-x-TM3-T
B
C
E
Tube
MJE13005L-x-TN3-T MJE13005G-x-TN3-T TO-252 B C E Tube
MJE13005L-x-TN3-T MJE13005G-x-TN3-T TO-252 B C E Tape Reel
MJE13005L-x-TQ3-R
MJE13005G-x-TQ3-R
B
C
E
Tape Reel
MJE13005L-x-TQ3-T
MJE13005G-x-TQ3-T
B
C
E
Tube
MJE13005L-x-T2Q-T MJE13005G-x-T2Q-T TO-262 B C E Tube
(1)T: Tube, K: Bulk, R: Tape Reel
(2) T60: TO-126, TA3: TO-220, TF3: TO-220F,
(2) TM3: TO-251, TQ3: TO-263, T2Q: TO-262
(2) TN3: TO-252
(3) x: refer to Classification of hFE1
(4) L: Lead Free, G: Halogen Free
MJE13005L-x-T60-K
(1)Packing Type
(2)Package Type
(4)Lead Free
(3)Rank
MJE13005 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIM UM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Base Voltage
VCBO
700
V
Emitter Base Voltage
VEBO
9
V
Collector Curr ent
Continuous
IC
4
A
Peak (1)
ICM
8
A
Base Current
Continuous
IB
2
A
Peak (1)
IBM
4
A
Emitter Current
Continuous
IE
6
A
Peak (1)
IEM
12
A
Power Dissipation at TA=25°С
TO-126/TO-220F
PD
40
W
TO-251/TO-252 50
TO-220/TO-263
TO-262
75
Derate above 25°С
TO-126/TO-220F
320
mW/°С
TO-251/TO-252
400
TO-220/TO-263
TO-262
600
Operating and Storage Junct ion Temperature
TJ , TSTG
-65 ~ +150
°С
Note: Absol ute maximum rat ings are those val ues beyond which t he device coul d be permanentl y damaged.
Absolute ma ximum ratings ar e s tress ratings only and functi onal device operation is not im pl ied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-126
θJA
89
°С/W
TO-251/TO-252
110
TO-220/TO-263
TO-262/TO-220F
62.5
Junction to Case
TO-126/TO-220F
θJC
3.125
°С/W
TO-251/TO-252
2.5
TO-220/TO-263
TO-262
1.67
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ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=10mA , IB=0
400
V
Collector Cutoff Current ICBO
VCBO=Rated Value,
VBE(OFF)=1.5V
1 mA
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
5
Emitter Cutoff Current
IEBO
VEB=9V, IC=0
1
mA
SECOND BREAKDOWN
Second Break down Collector Current
with bass forward biased
IS/B See Fig. 11
Clamped Inductive SOA with Base
Reverse Biased
RBSOA See Fig. 12
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE1
I
C
=0.5A, V
CE
=5V 15 50
hFE2
IC=1A, VCE=5V
10
60
hFE3
IC=2A, VCE=5V
8
40
Collector-Em itter Saturation Voltage VCE(SAT)
IC=1A, IB=0.2A
0.5
V
I
C
=2A, I
B
=0.5A 0.6 V
IC=4A, IB=1A
1
V
IC=2A, IB=0.5A, Ta=100°С
1
V
Base-Emitter Sat ur ation Voltage VBE (SAT)
IC=1A, IB=0.2A
1.2
V
I
C
=2A, I
B
=0.5A 1.6 V
IC=2A, IB=0.5A, TC=100°С
1.5
V
DYNAMIC CHARACTERIS TICS
Current-Gain-Bandwidth Product
fT
IC=500mA, VCE=10V, f=1MHz
4
MHz
Output Capacitance C
OB
V
CB
=10V, I
E
=0, f=0.1MHz 65 pF
SWITCHING CH ARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
VCC=125V, IC=2A,
IB1=IB2=0.4A,
tP=25μs, Duty Cycle≤1%
0.025
0.1
μs
Rise Time t
R
0.3 0.7 μs
Storage Time
tS
1.7
4
μs
Fall Time
tF
0.4
0.9
μs
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Note: 2. Puls e Test: PW=300μs, Duty Cycle≤2%
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
RANGE
15 ~ 20
20 ~ 25
25 ~ 30
30 ~ 40
40 ~ 50
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APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching Resistive
Switching
Test Circuits
P
w
5V
DUTY CYCLE≦10%
t
r
, t
f
≦10ns 68
0.001μF
1k
1N4933
0.02μF270
+5V
1k
1k
33 1N4933
1N4933 33
+5V
R
B
MJE210
I
B
2N2222
2N2905
47
1/2W
100 MJE200
-V
BE
(off)
T.U.T.
V
cc
MR826*
Vclamp
*SELECTED FOR≧1kV
5.1k
51 V
CE
L
I
c
Note:
P
W
and V
cc
Adjusted for Desired I
c
R
B
Adjusted for Desired I
B1
+125V
RB
D1
-4.0V
SCOPE
Rc
TUT
Circuit Values
Coil Data : GAP for 200μH/20 A
VCC=20V
FERROXCUB E core #6656 LCOIL=200μH VCLAMP=300V
Full Bobbin ( ~ 16 Turns) #16
VCC=125V
RC=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
Test Waveforms
OUTPUT WAVEFORMS
I
C
I
C(PK)
t
F
UNCLAMPED＞t2
t
tft1
V
CE
TIME t2
t
VCE or
V
CLAMP
t
F
CLAMPED
t1 Adjusted to
Obtain Ic
Test Equipment
Scope-Tektronics
475 or Equivalent
t1=L
COIL
(I
CPK
)
V
CC
t2=L
COIL
(I
CPK
)
V
CLAMP
+10 V 25μS
0
-8V
t
R
, t
F
<10ns
Duty Cycly=1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
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RESISTIVE SWITCHING PERFORMANCE
Time, t (°С)
0.04
Fig. 1 Turn-On Time
0.1 2
1
0.5
0.2
0.1
0.05
0.01
0.2 0.4 1
Collector Current, IC (A)
t
R
4
t
D
@ VBE(OFF)=5V
Vcc=125V
Ic/IB=5
TJ=25°С
0.02
Time, t (°С)
0.04
Fig. 2 Turn-Off Time
0.1 2
10
5
2
1
0.5
0.2
0.2 0.5 1
Collector Current, IC (A)
t
F
4
Vcc=125V
Ic/IB=5
TJ=25°С
0.3
0.1
t
S
Transient Thermal Resistance, r(t)
(Normalized)
0.01
Fig. 3 Typical Thermal Response [ Z
θJC
(t)]
0.02 2
1
0.7
0.5
0.1
0.07
0.01
0.1
0.05 0.2 0.5
Time, t (ms)
1
0.3
0.2
0.05
0.03
0.02
5 10 20 50 10
0
20
0
50
01k
P
(PK)
t
1
t
2
DUTY CYCLE, D=t
1
/t
2
Z
θJC(t)
=r(t) R
θJC
R
θJC
=1.67°С/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
j(pk)
-T
C
=P
(pk)
Z
θJC(t)
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Collector Current, I
C
(A)
5
Fig. 4 Forward Bias Safe Operating Area
7 200
10
5
2
1
0.5
0.1
20 30 100
Collector-Emitter Voltage, V
CE
(V)
300
UTC MJE13005
0.2
0.05
0.02
0.01
10 50 70
400
500
1ms
500μs
5 ms
dc
Fig. 5 Reverse Bias Switching Safe Operating Area
Collector-Emitter Clamp Voltage, V
CE
(V)
V
clamp
VBE(OFF)=9V
TC＞100°С
IB1=2.0A
5V
UTC MJE13005
Collector Current, I
C(PK)
(A)
3V
1.5V
4
3
2
1
0
0 100 200 300 400 500 600 700 800
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RESISTIVE SWITCHING PERFORMANCE(Cont.)
Fig. 6 Forward Bias Power Derating
Case Temperature, T
C
(°С)
Power Derating Factor
1
0.8
0.6
0.4
0
20 40 60 80 100 120 140 160
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
0.2
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SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be sub jected to greater dissipation than the c urves indicat e.
The data of Fig. 4 is based on TC = 25°С; T J(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when T C≥25°С. Second breakdown limitations do not
derate the sam e as thermal lim itations. Allo wable current at the voltages sho wn on Fig. 4 ma y be found at any cas e
temperature by using the appropriate curve on Fig. 6.
TJ(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the li m i tations impos ed by second breakdown.
REVERSE BIAS
For inductive l oads , high v o lta ge and h igh cu rr ent m ust be s ust ain ed simultaneously d urin g tur n-off , i n most cas es,
with the base t o emitter j unction reverse biased. Under th ese conditio ns the collector voltage must be held to a saf e
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the dev ice is never subjec ted to an avalanche mo de. Figure 5 gives the c omplete
RBSOA characteristics.
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TYPICAL CH ARACTERIS TICS
DC Current Gain, h
FE
0.04
Figure 7. DC Current Gain
0.06 0.1 4
100
70
50
30
20
1
0
7
5
0.2 0.4 0.6 12
T
J
=150°С
25°С
-55°С
Collector Current, I
C
(A)
V
CE
=2V
- - - - - -V
CE
=5V
Collector-Emitter Voltage, V
CE
(V)
0.03
Figure 8. Collector Saturation Region
0.05 0.1 2
2
1.6
1.2
0.8
0.4
0
0.2 0.3 0.5 0.7 1
T
J
=25°С
Ic=1A 2A
Base Current, I
B
(A)
3A 4A
3
Base-Emitter Voltage, V
BE
(V)
0.04
Figure 9. Base-Emitter Voltage
0.06 0.1 4
1.3
1.1
0.9
0.7
0.5
0.3 0.2 0.4 0.6 12
T
J
=-55°С
25°С
25°С
Collector Current, I
C
(A)
V
BE(SAT)
@ I
C
/I
B
=4
- - - - - -V
BE(ON)
@ V
CE
=2V
150°С
Collector-Emitter Saturation Voltage, V
CE(SAT)
(V)
0.04
Figure 10. Collector-Emitter Saturation Voltage
0.06 0.1 4
0.55
0.45
0.35
0.25
0.15
0.05 0.2 0.4 0.6 12
T
J
=-55°С
150°С
Collector Current, I
C
(A)
25°С
Ic/I
B
=4
Collector Current, I
C
(μA)
-0.4
Figure 11. Collector Cutoff Region
-0.2 +0.6
10k
1k
100
10
1
0.1
0 +0.2 +0.4
Base-Emitter Voltage, V
BE
(V)
V
CE
=250V
100°С
T
j
=150°С
75°С
50°С
25°С
REVERSE FORWARD
125°С
Capacitance, C (pF)
0.3
Figure 12. Capacitance
0.5 50
2k
1k
700
500
300
100
70
20
1 3 5 10 30
Reverse Voltage, V
R
(V)
100 300
Cib
Cob
200
50
30
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other par ameter s) li sted i n products specif ic ations of any and all UTC products descri bed or cont ained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alf uncti on of these products can be reasonably expect ed to result in personal injur y. Reproduct ion in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented i n thi s docum ent does not f orm part of any quot ation or c ontract, is bel iev ed to be accurat e
and rel iable and may be c hanged without noti c e.