lithic dual | _s |8 MOnNnoOlmMic aqua Giliconix | @ n-channel JFETs 8 anil des i in ed f r Performance Curves NNR wy dg Or .ee See Section 5 > e e eve = Differential Amplifiers BENEFITS 8 Minimum System Error and Calibra- ww) tion 5 mV Offset Maximum (2N3921) NO Simplifies Amplifier Design Low Output Conductance TO-71 g See Section 7 10 O02 i] *ABSOLUTE MAXIMUM RATINGS (25C) a G2 Gate-Drain or Gate-Source Voltage ......... tease, -5OV S10 O82 & Gate Current 0.0.0.0... ccc cece cere ee eee ... 50mA Total Device Dissipation (Derate 1.7 mW/C to 200C) .......... eee ee 300 mW Storage Temperature Range.............. -65 to +200C $2 yP2 G2 BOTTOM VIEW & oo * *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) Characteristic Min Max Unit Test Conditions a} |, Gate Reverse C - nA | Veg =-30v, Vps=0 ite Re ent = . = ra GSS ate Reverse Curren 7 HA GS OS 700C 3 | S$ | BVpGo _ Drain-Gate Breakdown Voltage 50 Ip =1HA, lg =0 4 I VGS(off) _Gate-Source Cutoff Voltage -3 v Vos = 10 V, Ip =1nA _5 | T{YGs Gate-Source Voltage 0.2 -2.7 Vps = 10 V, ip = 100 uA Hel Gate Operating C 0 Pe Vog = 10 V, Ip = 700 wa ti t = 'D* a G ate Operating Curren 25 nA 0G D a 100C 8 ipss Saturation Drain Current (Note 1) 1 10 mA | Vos=10V,Vqs=0 9 | fs Common-Source Forward Transconductance (Note 1) 1500 7500 ymho [10 | D | Gos Common-Source Output Conductance 3 Vine = 10 V, Vee =0 1 x Ciss Common-Source Input Capacitance 18 pF ps* GS* f=1kHz 12 | a | Crss Common-Source Reverse Transfer Capacitance 6 aM - 13 | } Sts Common-Source Forward Transconductance 1500 : umho | Vpg=10V,Ip=700uA | f= 1kHz 14 [Sos Common-Source Output Conductance 20 16 NF Spot Noise Figure 2 dB | Vpg=10V,Vgg 0 f= 1 kHz, Rg = 1 meg a 2N3921 2N3922 2N4084 2N4085, Characteristic Unit Test Conditions Min | Max | Min | Max | Min |Max | Min {| Max 16 \Vgs1-VGs2! Differential Gate-Source Voltage 5 5 15 15 mV IM AWee1-Vae9! Gate-Source Differential Voltage = 0 17| A] ~GSIGS2" Change with Temperature 10 25 10 25 |uvc| Voe= tov.) A> OC Lt AT (Note 2) ip = 700 pA | TB = 100C OF. i ie |W] 28 Transconductancs Ratio 0.95] 1.0 |0.95] 1.0 |o95]10 |o95|10 | f=1kHz 9fs2 {Note 3) 0 ome *JEDEC registered data. NNR i NOTES: NRL-D 0 1. Pulse test duration = 2 ms. 0 2. Measured at end points; Ta and Tg. 2 3. Assumes smaller value in numerator. x 1979 Siliconix incorporated 3-13