1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
28
TIP32, TIP32A ... C General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Version 2004-06-29
Collector current – Kollektorstrom 3 A
Plastic case TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca. 2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1 = B 2 = C 3 = E Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
TIP32 TIP32A TIP32B TIP32C
Collector-Emitter-voltage B open - VCE0 40 V 60 V 80 V 100 V
Collector-Emitter-voltage B shorted - VCES 40 V 60 V 80 V 100 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung Ptot 2 W 1)
with cooling – mit Kühlung TC =25°C Ptot 40 W
Collector current – Kollektorstrom - IC3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom - ICM 5 A
Base current – Basisstrom - IB1 A
Junction temp. – Sperrschichttemp. Tj150°C
Storage temp. – Lagerungstemperatur TS- 65…+ 150°C
Characteristics, Tj = 25°C Kennwerte, Tj = 25°C
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 3 A, - IB = 375 mA - VCEsat – – 1.2 V
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 4 V, - IC = 3 A - VBEon – – 1.8
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 4 V, - IC = 1 A
- VCE = 4 V, - IC = 3 A hFE
hFE
25
10 –
––
50
1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 29
General Purpose Transistors TIP32, TIP32A ... C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 30 V TIP32
TIP32A - ICE0
- ICE0
–
––
–300 nA
300 nA
- VCE = 60 V TIP32B
TIP32C - ICE0
- ICE0
–
––
–300 nA
300 nA
- VCE = rated VCE0 - ICES – – 200 nA
h-Parameters at - VCE = 10 V, - IC = 0.5 A, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung hfe 20 – –
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 0.5 A, f = 1 MHz fT3 MHz – –
Switching times – Schaltzeiten
turn-on time - ICon = 1 A,
- IBon = IBoff = 100 mA ton – 300 ns –
turn-off time toff –1 µs–
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse RthA 62 K/W 1)
RthC 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment M 4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren TIP31, TIP31A
TIP31B, TIP31C
