BACKSIDE JUNCTION ISOLATED FROM ACTIVE CONTACTS 0.032 fears ALL DIMENSIONS IN INCHES (ALL DIMENSIONS IN MILLIMETERS) monolithic dual n-channel JFET designed for... s FET Input Amplifiers = Low and Medium Frequency Amplifiers e = Impedance Converters Precision Instrumentation Amplifiers = Comparators TYPE PACKAGE Dual TO-71 Dual Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristics Low Vesioff) Unit (-1.5 Vv) 5 z = e Zz e 3 x > oO 2 q 2 ce oa I o 1 0 4 8 12 16 20 Vps ORAIN SOURCE VOLTAGE (VOLTS) Transfer Characteristics Low VGSioff) Unit (-1.5 V) 5 Vpg = 15V a 4 e g i 3 iva > oO 2 z 2 xc a ' 24 ~1.6 ~1.2 -8 ~4 9 Vas ~ GATE SOURCE (VOLTS) Ip DRAIN CURRENT (mA) Ip DRAIN CURRENT ima) Output Characteristics Medium VGSstoff} Unit (-2.2 V) 10 a 4 3 12 16 20 Vps ~ DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics Medium VGSloff) Unit (-2.2.V) 10 Vpog= 18V ~1.6 1.2 -8 -4 0 Vag GATE SOURCE VOLTAGE (VOLTS) BENEFITS: Minimum System Error and Calibra- tion 5 mV Offset Maximum (J401) 95 dB Minimum CMRR @ Low Drift With Temperature 10 wV/C (3401) @ Simplifies Amplifier Design Output Conductance < 2 umho @ Low Noise _ ey =6 nV/./H2 at 10 Hz Typical PRINCIPAL DEVICES 2N3921-2, 2N4084-5, 2N5045-7, U401-6 2N4085CHP, 2N5046CHP-47CHP, U403CHP-O6CHP Drain Current and Transconductance vs Gate-Source Cutoff Voltage o 10K =15V ats @ f= TkHZ {nsgg ~ SATURATION DRAIN CURRENT (mA} 100 (oyu) JONV_LOINGNOISNVH.L GuvMHYod 98 O17 1 10 Vesiott) - GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Forward Transconductance vs Drain Current 3 R /GS(off) = - Vesioft) = -2.16V x fs FORWARD TRANSCONDUCTANCE {umho} Ss r= o1 1 10 s Ip DRAIN CURRENT (mA) 5-17 1979 Siliconix incorporated UuNN Ss xMIUODYIiconix PERFORMANCE CURVES (Cont) (25C unless otherwise noted) Transconductance vs Gate Source Voltage Transconductance vs Gate Source Voltage Output Conductance Low Vgs(o#) Unit (-1.5 V) Medium V Gs(off) Unit (-2.2 V} vs Drain Gate Voltage 8K 10K 100 T=4 3 Vog* 15 V -55C 5 Vog= 1S V 3 & f= 1 kHz fo 1 kHz = = 0 MEDIUM Vggioft) UNIT 3 6x 3 # Vasiott) = -22V ; o 2 Z - z Vgs + 0 LOW Vgsiot) UNIT 5 5 6 8 Vesiott) * -1-52V a aK 2 3 10 Ss 5 x 8 3 8 FE z 2 < 2 z= c 2K Fs 5 ; 1 2K & ; a ; ' Vp = 200 nA -1.2 A 4 . . . -2.0 -1.6 -1.2 -8 -4 a G 5 10 15 20 25 30 Vos GATE SOURCE VOLTAGE (VOLTS) Vas GATE SOURCE VOLTAGE (VOLTS) Vog DRAIN GATE VOLTAGE (VOLTS) Gate Operating Current Gate Operating Current Equivalent Short Circuit Input Noise vs Drain Gate Voltage vs Ambient Temperature vs Frequency ~1K = -1K 10 os < Vog * 10V 2% e Ip = 200 uA _ BE a = ae & 2 8 x oe ~100 = -100 3 ca Oo a2 o w 9 LIL Vog = 10v | || gy z < Pen Ip = 200 nA eB -10 - 4 a> w g cw oa > 4 wo oO Ww S # 2 BS -1 6 -1 z 4 r 2k vog=10V i 8 2 8 Ves = 0 2? 04 lass @ Vps = 0 01 5 | LIU | 0 10 20 30 40 50 -60 -20 0 20 60 100 140 40 100 1K Vpg DRAIN GATE VOLTAGE (VOLTS) Ta AMBIENT TEMPERATURE (C) FREQUENCY (Hz} Capacitance vs Gate Source Voltage Capacitance vs Drain to Gate Voltage 12 5 10 @ Ip = 200uA zoe g 8 3g 3 a 6 a 5 E Cp @ Ip = 200 nA g gS 2 z 3 & 2 1 0 -2 -4 ~6 8-10 0 4 8 12 16 20 Vas GATE SOURCE VOLTAGE (VOLTS) Vog ORAIN GATE VOLTAGE (VOLTS) 1979 Siliconix incorporatedGATE ALSO BACKSIDE CONTACT SAND D ARE SYMMETRICAL 0.018 10.457) ALL DIMENSIONS IN INCHES FALL DIMENSIONS IN MILLIMETERS) pe n-channel JFET = Small Signal Amplifiers =) VHF Amplifiers = Oscillators a Mixers = Switches TYPE PACKAGE Single TO-72 Singte TO-92 Dual TO-71 Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic 2 16 = 6 B12 oc c 2 o Zz os | c a o04 0 Vos - DRAIN SOURCE VOLTAGE (VOLTS) Transfer Characteristic 15 =168V _ 12 <q r z uw 2 oO z < ec a ; 2 -1.0 Vas - GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics Vos = 15 V f= TkHz E 3 Hi 121 gfs - FORWARD TRANSCONDUCTANCE (umbho} -1.0 -2.0 -3.0 4.0 Vas - GATE-SOURCE VOLTAGE (VOLTS) Output Characteristic Ves =0V < = = 2 wl o is 2 Qo z 4 a : 2 1 9 2 Vps - ORAIN SOURCE VOLTAGE {VOLTS} Transfer Characteristics Vos = 15V < bE 2 w c oc 2 eo gz < rc a 1 a Vag - GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics Vos = 15 V f= tkHz ga 8 x 8 Qfs - FORWARD TRANSCONDUCTANCE {umho) Vas - GATE-SOURCE VOLTAGE Siliconix BENEFITS: a Wide Input Dynamic Range High lg Breakpoint Voltage High Gain = Low Insertion Loss Switches PRINCIPAL DEVICES 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819, 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 Drain Current & Transconductance vs Gate-Source Voltage NR o 3 is g & {s04u7) JONVLONGNOOSNV HL GHYVMHOd - 36 ~ Sts @ T= 1kHe Vestoff) 'p = 1nA - 2-3 a) 6 7 ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Ipss - SATURATION DRAIN CURRENT (mA) Leakage Currents vs Ambient Temperature =-30V, Vps= = 16 V, ID = 100 CURRENT {nA) T- TEMPERATURE (C) ON Resistance vs Ambient Temperature 15 Ip = 100 pA 14 geo 1.3 1.2 11 1.0 0.9 0.8 07 tpg - RELATIVE TO 25C VALUE 66 0.5 -55 -15. 25 CJ 105 145 T ~ TEMPERATURE (C) 5-25 1979 Siliconix incorporated TIN xiuoolNRL iconix PERFORMANCE CURVES (Cont) (25C unless otherwise noted) Equivalent Input Noise Voltage and Noise Current vs Frequency e > 100 g < F 4 o > 2 10 2 4 iF : UH 49-16 10 100 mK 10K 100K f ~ FREQUENCY (Hz) Common-Source Capacitances vs Gate-Source Voltage Vos" 15 V f=1 < 2 uw og 2 FE 9 < z eo Vas - GATE-SOURCE VOLTAGE (VOLTS) Gate Operating Current vs Drain-Gate Voltage tg - GATE CURRENT (nA) Ip = 100 o 5 10 6 20 25 30 VpG - ORAIN-GATE VOLTAGE (VOLTS) Static Drain-Source ON Resistance vs Gate-Source Cutoff Voltage 500 Ip = 100 nA =0 100 "DS(on ORAIN Sones) ON RESISTANCE 0 1.0 -2.0 -30 -4.0 -5.0 -60 -7.0 Vas (off) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 10713 (2H/YVd WV) LNIYHND 3SION Nr Common-Source Output Admittance vs Drain-Source Voltage 1000 Ves20 =1 dos ~ OUTPUT ADMITTANCE (umhos)} 0 8 16 24 32 40 Vps - DRAIN-SOQURCE VOLTAGE (VOLTS) Common-Source Forward Transadmittance vs Frequency 10 _ =9 yfs - FORWARD TRANSADMITTANCE (mmhos) 01 10 50 200 f - FREQUENCY (MHz) Common-Source Reverse Transfer Admittance vs Frequency 0 Yrs - TRANSFER ADMITTANCE {mmhos) 01 10 100 200 f - FREQUENCY (MHz) Common-Source Forward Transconductance vs Drain Current 10K 100 0.01 0.1 1.0 10 100 1p ORAIN CURRENT (mA) 9s FORWARD TRANSCONDUCTANCE (zmhos) x Common-Source Output Admittance vs Drain Current Gos - OUTPUT ADMITTANCE {umhos} Yos - OUTPUT ADMITTANCE {mmhos) VALUE RELATIVE TO 25C VALUE Yis - INPUT ADMITTANCE (mmhos} 100 0.01 0.1 10 Ip - DRAIN CURRENT (mA) Common-Source Input Admittance vs Frequency oS =1bV =o OT 10 50 100 200 f - FREQUENCY (MHz) Common-Source Output Admittance vs Frequency Ves =0 10 100 200 f - FREQUENCY (MHz) Drain Current and Transconductance vs Ambient Temperature 16 14 Vos = 15 V 13 Ves=0 @f= 1kH 12 St = ui 1.0 038 0.8 07 O6 os -65 25 65 105 145 T TEMPERATURE (C) 5-26 1979 Siliconix incorporated