PD - 95038 IRF7304PbF HEXFET(R) Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V RDS(on) = 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -4.7 -4.3 -3.4 -17 2.0 0.016 12 -5.0 -55 to + 150 A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units 62.5 C/W 10/6/04 IRF7304PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Min. Typ. Max. Units Conditions -20 V VGS = 0V, ID = -250A -0.012 V/C Reference to 25C, ID = -1mA 0.090 VGS = -4.5V, ID = -2.2A 0.140 VGS = -2.7V, ID = -1.8A -0.70 V VDS = VGS, ID = -250A 4.0 S VDS = -16V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 22 ID = -2.2A 3.3 nC VDS = -16V 9.0 VGS = -4.5V, See Fig. 6 and 12 8.4 VDD = -10V 26 ID = -2.2A ns 51 RG = 6.0 33 RD = 4.5, See Fig. 10 Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance 6.0 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 610 310 170 IGSS 4.0 D nH Between lead tip and center of die contact pF VGS = 0V VDS = -15V = 1.0MHz, See Fig. 5 G S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units -2.5 -17 56 71 -1.0 84 110 A V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -1.8A, VGS = 0V TJ = 25C, IF = -2.2A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -2.2A, di/dt - 50A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. IRF7304PbF 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V 10 1 -1.5V 20s PULSE WIDTH TJ = 25C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 0.1 1 10 10 1 -1.5V 20s PULSE WIDTH TJ = 150C 0.1 0.01 100 0.1 Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 150C 1 VDS = -15V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics A 100 Fig 2. Typical Output Characteristics 100 TJ = 25C 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 10 1 5.0 A I D = -3.6A 1.5 1.0 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRF7304PbF 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500 Ciss 1000 Coss Crss 500 0 1 10 100 A I D = -2.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 0 -VDS , Drain-to-Source Voltage (V) 10 15 20 A 25 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 5 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.5 10 1ms 1 TA = 25 C TJ = 150 C Single Pulse 1 10ms 10 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRF7304PbF V DS V GS 5.0 D.U.T. RG -ID , Drain Current (A) 4.0 RD - + V DD -4.5 V Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( C) 10% VGS 150 td(on) Fig 9. Maximum Drain Current Vs. Ambient Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7304PbF Current Regulator Same Type as D.U.T. 50K QG -4.5 V QGS .2F 12V .3F D.U.T. QGD +VDS VGS VG -3mA IG Charge Fig 12a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 12b. Gate Charge Test Circuit IRF7304PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* + - * V DD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS [ ISD ] IRF7304PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 0.25 [.010] MIN .0532 .0688 1.35 1.75 MAX A1 .0040 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b MILLIMET ERS MAX A 5 INCHES MIN y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER IRF7304PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04