2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES * Low RDS(on) * Ease of Paralleling * Qualified to MIL-PRF-19500/543 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25C PART NUMBER 2N6764 2N6766 2N6768 2N6770 V DS, Volts 100 200 400 500 S C H E M ATIC R DS(on) .055 .085 .30 .40 ID, A m p s 38 30 14 12 MECHANICAL OUTLINE 1.197 1.53 REF. 1.177 0.875 MAX. 0.675 0.655 0.188 R. MAX. 0.135 MAX. 0.440 0.420 0.450 0.250 0.312 MIN. SEATING PLANE 0.043 0.038 0.225 0.205 0.161 0.151 0.525 R. MAX. Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate 2 PLCS. Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above except the lead diameter is 0.058 min to 0.063 max. 7 03 R0 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N6764 Units Continuous Drain Current 38 A ID @ VGS = 10V, TC = 100C Continuous Drain Current 24 A 1 ID M Pulsed Drain Current 152 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C VG S Gate-Source Voltage 20 EA S Single Pulse Avalanche Energy IA R TJ TS T G Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature 2 150 38 V 4 4 mJ A -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 100 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 24 A 3 VG S = 10 V, ID = 38 A 3 VDS = VG S,ID = 250 A VD S = 80 V, VG S = 0V VD S = 80 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 38A VD S = 50 V See note 4 VD D = 50 V, ID = 38A, RG =2.35 See note 4 ----------------------------- 0.055 0.065 4.0 25 250 100 -100 125 22 65 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.9 500 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 --------50 8 25 --------- Units Min. ------- V A Test Conditions TJ = 25C, IS = 38A 3,VG S = 0 V TJ = 25C, IF= 38A,di/dt< 100A/s 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50V, Starting TJ = 25C, L = 100 H + 10%, RG = 25 , Peak IL = 38A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/543 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N6766 Continuous Drain Current ID @ VGS = 10V, TC = 100C Continuous Drain Current Units 30 A 19 A ID M Pulsed Drain Current 120 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy 20 IA R TJ TS T G Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature 2 V 60 4 mJ 30 4 A -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 200 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 19 A 3 VG S = 10 V, ID = 30 A 3 VDS = VG S,ID = 250 A VD S = 160 V, VG S = 0V VD S = 160 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 30A VD S = 100V See note 4 VD D = 100 V, ID = 30A, RG =2.35 See note 4 ----------------------------- .085 .090 4.0 25 250 100 -100 115 22 60 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.9 950 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 --------55 8 30 --------- Units Min. ------- V A Test Conditions TJ = 25C, IS = 30 A 3,VG S = 0 V TJ = 25C, IF= 30 A,di/dt<100A/s 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25C, L = 100 H + 10%, RG = 25 , Peak IL = 30 A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/543 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N6768 Units Continuous Drain Current 14 A ID @ VGS = 10V, TC = 100C Continuous Drain Current 9.0 A Pulsed Drain Current 56 A Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 ID M P D @ TC = 25C VG S Gate-Source Voltage EA S 20 Single Pulse Avalanche Energy 2 11.3 1 IA R TJ TS T G Avalanche Current Operating Junction Storage Temperature Range Lead Temperature 14 V 4 4 mJ A -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 400 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 9.0 A 3 VG S = 10 V, ID = 14 A 3 VDS = VG S,ID = 250 A VD S = 320 V, VG S = 0V VD S = 320 V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 14A VD S = 200 V See note 4 VD D = 200 V, ID = 14 A, RG = 2.35 See note 4 ----------------------------- .300 .400 4.0 25 250 100 -100 110 18 65 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.7 1200 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 --------52 5.0 25 --------- Units Min. ------- V A Test Conditions TJ = 25C, IS = 14 A 3,VG S = 0 V TJ = 25C, IF= 14 A,di/dt<100A/s 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25C, L = 100 H + 10%, RG = 25 , Peak IL = 14 A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/543 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25C JANTXV, JANTX, 2N6770 Continuous Drain Current ID @ VGS = 10V, TC = 100C Continuous Drain Current Units 12 A 7.75 A ID M Pulsed Drain Current 48 A P D @ TC = 25C Maximum Power Dissipation 150 W Linear Derating Factor 1.2 W/C 1 VG S Gate-Source Voltage EA S Single Pulse Avalanche Energy 20 IA R TJ TS T G Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature 2 V 8.0 4 mJ 12 4 A -55 to 150 300(.06 from case for 10 sec) C C ELECTRICAL CHARACTERISTICS @ TJ = 25C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain ("Miller") Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 500 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 7.75 A 3 VG S = 10 V, ID = 12 A 3 VDS = VG S,ID = 250 A VD S = 400 V, VG S = 0V VD S = 400V, VG S = 0V, TJ = 125C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 12 A VD S = 250 V See note 4 VD D = 250 V, ID = 12 A, RG = 2.35 See note 4 ----------------------------- .400 .500 4.0 25 250 100 -100 120 19 70 35 190 170 130 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.7 1600 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 0.83 --48 Units Test Conditions C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 --------55 5.0 27 --------- Units Min. ------- V A Test Conditions TJ = 25C, IS = 12A 3,VG S = 0 V TJ = 25C, IF= 12A,di/dt<100A/s 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25C, L = 100 H + 10%, RG = 25 , Peak IL = 12A Pulse width < 300 s; Duty Cycle < 2 % See MIL-S-19500/543 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246