re . - wore 25C D M 8235605 OOO4b93 3 MMSIEG. NPN Silicon RF Transistors BFS 18 oe - BFS 18R SIEMENS AKTIENGESELLSCHAF 0-7-3 ~/F- ote 19 BFS 19R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package (23-A 3 DIN 41869). These transistors were especially designed for use in RF circuits in thick and thin film technology. For identification purposes, the transistors are marked as follows: BFS 18 = CA; BFS 19 = "CB"; The transistors are also available upon request with changed terminal sequence (emitter and base terminal interchanged) under the designation BFS 18R (mark "CY") and BFS 19R (mark "CZ). Type Mark | Ordering code 1200512005 TH od soos BFS 18 CA Q62702-F348 | 8 BFS 19 CB 062702-F349 ry 4 S 3 BFS 18R CY Q62702-F587 : 2 | Sea BFS 19R CZ 0Q62702-F588 St 5 042003 4,.0,25 bt 3-95 12-035 Approx. weight092g Oimensions in mm BFS 18 Maxinvum ratings BFS 19 Callector-emitter voltage VeEo 20 Vv Collector-base voltage Veso 30 Vv Emitter-base voltage Vero 5 Vv Collector current Ie 30 mA Junction temperature Tj 125 C Storage temperature range Tstg -65 to +125 c Total power dissipation (Tgg < 65C) Prot 150 mw Thermal resistance Junction to ambient air Rihua 520 K/W Junction to substrate back Risse 410 KAW 1) Ceramic substrate 0.7 mm; 2.5 em area Sieg BE eds eer 7 39 2070 A-07 tah atone the can wt eth AaB sc n mal a eSC D MM 8235605 OO04694 5 MESIEG oo 25C 04694 D2 3/-/5 BFS 18 BFS 18R - STENENS AKTIENGESELLSCHAF BFS 19 BFS 19R Static characteristics (Tanp = 25C) | BFS 18 | BFS 19 | Collector-emitter breakdown voltage . Uceo = 2 mA) Vipriceo >20 >20 Vv Collector cutoff current (Vcgo = 20 V) Teao <100 <100 nA (Vego = 20 V; Tj = 100C) Ieso <10 <10 HA Base-emitter voltage (Vce = 10 V; Ic = 1 mA) Vee 650 to 740 | 650 to 740 | mv DC current gain (Voge = 10 Vi Jo =1 mA) hg 35 to 125 65 to 225 - Dynamic characteristics (Tamp = 25C) Transition frequency , (Vce = 10 V; Ig = 1 mA; f = 100 MHz) fr 200 260 MHz Reverse transfer capacitance (Vee = 10 V; Ie = 1 mA; f = 1 MHz) Ci2e 0.85 0.85 pF Collector-base capacitance (Vcp = 10 V; f = 1 MHz) Ccso 1 1 pF Noise figure (Vce = 10 Vi fo = 1 mA; Rg = 100 Q; f = 100 MHz) NF 4 4 dB Tota! perm. power dissipation versus temperature mW Pro = 1(7) 0 50 100 150 C Tanne 740 seen TP ae O - 2071 A-08 11 an mee oy oe abt et bem et BE at DIC