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April 2008
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C www.fairchildsemi.com
1
FDS5351 N-Channel PowerTrench® MOSFET
FDS5351
N-Channel PowerTrench® MOSFET
60V, 6.1A, 35mΩ
Features
Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Inverter Switch
Synchronous Rectifier
Load Switch
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 60 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous 6.1 A
-Pulsed 30
EAS Single Pulse Avalanche Energy (Note 3) 73 mJ
PDPower Dissipation T A = 25°C (Note 1a) 5 W
Power Dissipation T A = 25°C (Note 1b) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDS5351 FDS5351 SO-8 13’’ 12mm 2500units
SO-8
D
D
D
D
S
SS
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
2
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, referenced to 25°C 55 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1µA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1.0 2.0 3.0 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250µA, referenced to 25°C -6.2 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6.1A 26.5 35.0 mΩVGS = 4.5V, ID = 5.5A 32.4 42.0
VGS = 10V, ID = 6.1A, TJ= 125°C 44.5 58.8
gFS Forward Transconductance VDD = 5V, ID = 6.1A 24 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 30V, VGS = 0V,
f = 1MHz
985 1310 pF
Coss Output Capacitance 90 120 pF
Crss Reverse Transfer Capacitance 50 75 pF
RgGate Resistance f = 1MHz 1.7 Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30V, ID = 6.1A,
VGS = 10V, RGEN = 6Ω
8 16 ns
trRise Time 3 10 ns
td(off) Turn-Off Delay Time 21 34 ns
tfFall Time 2 10 ns
QgTotal Gate Charge VGS = 0V to 10V VDD = 30V,
ID = 6.1A
19 27 nC
QgTotal Gate Charge VGS = 0V to 4.5V 913 nC
Qgs Gate to Source Charge 3 nC
Qgd Gate to Drain “Miller” Charge 3.5 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 6.1A (Note 2) 0.82 1.3 V
VGS = 0V, IS = 2.1A (Note 2) 0.76 1.2
trr Reverse Recovery Time IF = 6.1A, di/dt = 100A/µs 24 38 ns
Qrr Reverse Recovery Charge 15 27 nC
NOTES:
1. RθJA is determined with th e de vice moun ted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed b y design while R θCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 7A, VDD = 60V, VGS = 10V.
a) 50 °C/W when moun ted on a
1in2 pad of 2 oz copper. b) 125°C/W when mounted on a
minimum pad.
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
3
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0123
0
10
20
30
VGS = 3.5V
VGS = 4.5V
PULSE DUR ATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10V
VGS = 3V
VGS = 4V
ID, DRAIN CURRENT ( A )
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0102030
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
VGS = 4.5V
VGS = 4V
VGS = 3V
VGS = 10V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 6.1A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEM PER ATURE (oC)
vs Junction Te mperature Figure 4.
246810
0
20
40
60
80
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = 6.1A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
12345
0
10
20
30
VDS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 125oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOU RCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 125oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
4
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Figure 7.
048121620
0
2
4
6
8
10
ID = 6.1A
VDD = 30V
VDD = 20V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHAR GE(nC)
VDD = 40V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
10
100
1000
f = 1MHz
VGS = 0V
CAPACITA NCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
4000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10
2
4
6
8
1
TJ = 25oC
TJ = 125oC
tAV, TIME IN AV ALANCHE(ms)
IAS, AVALANCHE CURRENT(A)
30
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0
2
4
6
8
10
RθJA = 50oC/W
VGS = 10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
300
DC
10s
1s
100ms
10ms
1ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
1
10
100
1000
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.5
VGS = 10V
P(PK), PEAK TRANSIENT PO WER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25°C unless otherwise noted
FDS5351 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
5
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
Figure 13. Transient Thermal Response Cu rve
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 125oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
www.fairchildsemi.com
FDS5351 N-Channel PowerTrench® MOSFET
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C 6
Rev. I34
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