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FDS5351 N-Channel PowerTrench(R) MOSFET 60V, 6.1A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.1A This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 42m at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant Application Inverter Switch Synchronous Rectifier Load Switch D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S G SO-8 S S Pin 1 S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 60 Units V VGS Gate to Source Voltage 20 V Drain Current -Continuous 6.1 ID Parameter -Pulsed 30 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 73 Power Dissipation TA = 25C (Note 1a) 5 Power Dissipation TA = 25C (Note 1b) 2.5 Operating and Storage Junction Temperature Range -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 25 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking FDS5351 (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C Device FDS5351 Package SO-8 1 Reel Size 13'' Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET April 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient 60 V ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 A IGSS Gate to Source Leakage Current VGS = 20V, VDS = 0V 100 nA 3.0 V 55 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C -6.2 VGS = 10V, ID = 6.1A 26.5 35.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 5.5A 32.4 42.0 VGS = 10V, ID = 6.1A, TJ= 125C 44.5 58.8 gFS Forward Transconductance 1.0 VDD = 5V, ID = 6.1A 2.0 mV/C 24 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 985 1310 pF 90 120 pF 50 75 pF 1.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 4.5V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 30V, ID = 6.1A, VGS = 10V, RGEN = 6 VDD = 30V, ID = 6.1A 8 16 ns 3 10 ns 21 34 ns 2 10 ns 19 27 nC 9 13 nC 3 nC 3.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 6.1A (Note 2) 0.82 1.3 VGS = 0V, IS = 2.1A (Note 2) 0.76 1.2 24 38 ns 15 27 nC IF = 6.1A, di/dt = 100A/s V NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25C, L = 3mH, IAS = 7A, VDD = 60V, VGS = 10V. (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C 2 www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 3.0 VGS = 10V VGS = 4V VGS = 4.5V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 VGS = 3.5V 10 VGS = 3V 0 0 1 2 VGS = 3V VGS = 3.5V 2.5 VGS = 4V 2.0 1.5 VGS = 4.5V 1.0 0.5 0 3 10 Figure 1. On-Region Characteristics 100 ID = 6.1A VGS = 10V 1.8 ID = 6.1A rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 60 TJ = 125oC 40 TJ = 25oC 20 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On- Resistance vs Junction Temperature 100 30 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) VDS = 5V 20 TJ = 125oC 10 TJ = 25oC TJ = -55oC 0 VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1 2 3 4 VGS = 0V 10 TJ = 125oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C 3 1.2 www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4000 ID = 6.1A Ciss 8 1000 VDD = 30V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 20V VDD = 40V 4 Coss 100 Crss 2 f = 1MHz VGS = 0V 0 0 4 8 12 16 10 0.1 20 1 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 8 6 TJ = 25oC 4 TJ = 125oC 8 VGS = 10V 6 VGS = 4.5V 4 2 2 o RJA = 50 C/W 1 0.01 0.1 1 10 0 25 30 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 10 1ms 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 0.1 SINGLE PULSE TJ = MAX RATED 1s RJA = 125oC/W 10s DC TA = 25oC 0.01 0.01 0.1 1 10 100 300 SINGLE PULSE RJA = 125oC/W 100 TA = 25oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C VGS = 10V 4 www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C 5 www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * (R) PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM tm * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 (c)2008 Fairchild Semiconductor Corporation FDS5351 Rev.C 6 www.fairchildsemi.com FDS5351 N-Channel PowerTrench(R) MOSFET TRADEMARKS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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