NSVBCP53-16T3G - ON SEMICONDUCTOR

June, 2018 − Rev. 13 1Publication Order Number:

BCP53T1/D

BCP53 Series

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT−223 package

which is designed for medium power surface mount applications.

•High Current

•NPN Complement is BCP56

•The SOT−223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die

•Device Marking:

BCP53T1G = AH

BCP53−10T1G = AH−10

BCP53−16T1G = AH−16

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −80 Vdc

Collector−Base Voltage VCBO −100 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current IC1.5 Adc

Total Power Dissipation

@ TA = 25°C (Note 1)

Derate above 25°C

PD1.5

12 W

mW/°C

Operating and Storage

Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

(Surface Mounted) RqJA 83.3 °C/W

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

TL260

°C

Device Package Shipping†

ORDERING INFORMATION

SOT−223

CASE 318E

STYLE 1

MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

MARKING DIAGRAM

BCP53T1G SOT−223

(Pb−Free) 1000/Tape & Ree

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

www.onsemi.com

BCP53−16T1G SOT−223

(Pb−Free) 1000/Tape & Ree

BCP53−10T1G SOT−223

(Pb−Free) 1000/Tape & Ree

BCP53−16T3G SOT−223

(Pb−Free) 4000/Tape & Ree

A = Assembly Location

Y = Year

W = Work Week

XXXXX = Specific Device Code

G= Pb−Free Package

AYW

XXXXXG

(Note: Microdot may be in either location)

SBCP53−16T1G SOT−223

(Pb−Free) 1000/Tape & Ree

SBCP53−10T1G SOT−223

(Pb−Free) 1000/Tape & Ree

SBCP53−10T1G SOT−223

(Pb−Free) 1000/Tape & Ree

BASE

EMITTER 3

COLLECTOR 2, 4

NSVBCP53−16T3G SOT−223

(Pb−Free) 4000/Tape & Ree

BCP53 Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0) V(BR)CBO −100 − − Vdc

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0) V(BR)CEO −80 − − Vdc

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, RBE = 1.0 kW)V(BR)CER −100 − − Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc

Collector−Base Cutoff Current

(VCB = −30 Vdc, IE = 0) ICBO − − −100 nAdc

Emitter−Base Cutoff Current

(VEB = −5.0 Vdc, IC = 0) IEBO − − −100 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −5.0 mAdc, VCE = −2.0 Vdc)

All Part Types

(IC = −150 mAdc, VCE = −2.0 Vdc)

BCP53, SBCP53

BCP53−10, SBCP53−10

BCP53−16, SBCP53−16, NSVBCP53−16

(IC = −500 mAdc, VCE = −2.0 Vdc)

All Part Types

hFE

100

−

250

160

250

−

Collector−Emitter Saturation Voltage

(IC = −500 mAdc, IB = −50 mAdc) VCE(sat) − − −0.5 Vdc

Base−Emitter On Voltage

(IC = −500 mAdc, VCE = −2.0 Vdc) VBE(on) − − −1.0 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 35 MHz) fT− 50 − MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BCP53 Series

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current Figure 2. DC Current Gain vs. Collector

Current (BCP53)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.2

0.6

0.8

1.0

1.4

1.8

2.0

Figure 3. DC Current Gain vs. Collector

Current (BCP53−10) Figure 4. DC Current Gain vs. Collector

Current (BCP53−16)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 5. BCP53, −10 Base Emitter Saturation

Voltage vs. Collector Current Figure 6. BCP53−16 Base Emitter Saturation

Voltage vs. Collector Current

IC, COLLECTOR CURRENT (A)

Vce(sat), COLLECTOR EMITTER SAT-

URATION VOLTAGE (V)

hFE, DC CURRENT GAIN

Vbe(sat), BASE EMITTER SATURA-

TION VOLTAGE (V)

0.4

1.2

1.6

IC/IB = 10 BCP53, −10, −16

+150°C

+25°C

−55°C

1010.10.010.001

100

140

180

200

120

160

150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

−55°C, 5 V

−55°C, 2 V

1010.10.010.001

100

140

180

120

160 150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

−55°C, 5 V

−55°C, 2 V

1010.10.010.001

100

150

200

300

250

150°C, 5 V

150°C, 2 V

25°C, 5 V

25°C, 2 V

−55°C, 5 V

−55°C, 2 V

1010.10.010.001

0.4

0.6

0.7

0.8

0.9

1.1

1.2

0.5

1.0

IC/IB = 10 BCP53, −10

+150°C

+25°C

−55°C

IC, COLLECTOR CURRENT (A)

Vbe(sat), BASE EMITTER SATURA-

TION VOLTAGE (V)

1010.10.010.001

0.4

0.6

0.7

0.8

0.9

1.1

1.2

0.5

1.0

IC/IB = 10 BCP53 −16

+150°C

+25°C

−55°C

BCP53 Series

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. BCP53, −10 Base Emitter Turn−On

Voltage vs. Collector Current VBE(on)

Figure 8. BCP53−16 Base Emitter Turn−On

Voltage vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.3

0.4

0.5

0.6

0.7

0.9

1.1

1.2

1010.10.010.001

0.2

0.5

0.6

0.7

0.8

0.9

1.0

1.2

Figure 9. BCP53, −10, −16 Saturation Region Figure 10. Input Capacitance

Ib, BASE CURRENT (A) VOLTAGE (V)

10.10.010.001

0.1

0.2

0.3

0.4

0.5

0.6

1.0

543210

100

110

Figure 11. Output Capacitance Figure 12. Standard Operating Area

VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V)

20141086420

1001010.1

0.01

0.1

Vbe(on), BASE EMITTER TURN−ON

VOLTAGE (V)

Vbe(sat), BASE EMITTER SATURA-

TION VOLTAGE (V)

Vce, COLLECTOR−EMITTER VOLTAGE (V)

CAPACITANCE (pF)

Ic, COLLECTOR CURRENT (A)

0.8

1.0

1.1

Vce = 2 V BCP53, −10

+150°C

+25°C

−55°C

Vce = 2 V BCP53 −16

+150°C

+25°C

−55°C

0.7

0.8

0.9 BCP53, −10, −16

IC = 100 mA

IC = 500 mA

IC = 1.5 AIC = 1.0 A BCP53−10

BCP53

BCP53−16

12 16 18

BCP53−10

BCP53

BCP53−16

SINGLE PULSE TEST AT Tamb = 25°C

CONTINUOUS THERMAL LIMIT

100 ms 10 ms1 ms

1 s

0.4

0.3

BCP53 Series

www.onsemi.com

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

0.08 (0003)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,

1994.

2. CONTROLLING DIMENSION: INCH.

1.5

0.059 ǒmm

inchesǓ

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091 2.3

0.091

2.0

0.079

SOLDERING FOOTPRINT*

HEDIM

AMIN NOM MAX MIN

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

A1 0.02 0.06 0.10 0.001

b0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c0.24 0.29 0.35 0.009

D6.30 6.50 6.70 0.249

E3.30 3.50 3.70 0.130

e2.20 2.30 2.40 0.087

0.85 0.94 1.05 0.033

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

NOM MAX

L1 1.50 1.75 2.00 0.060

6.70 7.00 7.30 0.264 0.069 0.078

0.276 0.287

HE− −

e1 0°10°0°10°

L0.20 −−− −−− 0.008 −−− −−−

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

BCP53T1/D

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