BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient (Surface Mounted) RqJA 83.3 C/W Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath TL C s 260 10 www.onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 AYW XXXXXG G 2 3 SOT-223 CASE 318E STYLE 1 A Y W XXXXX G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Shipping Device Package BCP53T1G SOT-223 (Pb-Free) 1000/Tape & Reel SBCP53-10T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-10T1G SOT-223 (Pb-Free) 1000/Tape & Reel SBCP53-10T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-16T1G SOT-223 (Pb-Free) 1000/Tape & Reel SBCP53-16T1G SOT-223 (Pb-Free) 1000/Tape & Reel BCP53-16T3G SOT-223 (Pb-Free) 4000/Tape & Reel NSVBCP53-16T3G SOT-223 (Pb-Free) 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2015 June, 2018 - Rev. 13 1 Publication Order Number: BCP53T1/D BCP53 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max -100 - - -80 - - -100 - - -5.0 - - - - -100 - - -100 Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = -100 mAdc, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC = -100 mAdc, RBE = 1.0 kW) V(BR)CER Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO Collector-Base Cutoff Current (VCB = - 30 Vdc, IE = 0) ICBO Emitter-Base Cutoff Current (VEB = - 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = - 5.0 mAdc, VCE = - 2.0 Vdc) All Part Types (IC = -150 mAdc, VCE = - 2.0 Vdc) BCP53, SBCP53 BCP53-10, SBCP53-10 BCP53-16, SBCP53-16, NSVBCP53-16 (IC = - 500 mAdc, VCE = - 2.0 Vdc) All Part Types hFE Collector-Emitter Saturation Voltage (IC = - 500 mAdc, IB = - 50 mAdc) VCE(sat) Base-Emitter On Voltage (IC = - 500 mAdc, VCE = - 2.0 Vdc) VBE(on) - 25 - - 40 63 100 - - - 250 160 250 25 - - - - -0.5 - - -1.0 - 50 - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -10 mAdc, VCE = - 5.0 Vdc, f = 35 MHz) fT MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BCP53 Series 2.0 IC/IB = 10 200 BCP53, -10, -16 +150C 1.6 150C, 5 V 180 1.8 1.4 hFE, DC CURRENT GAIN Vce(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS -55C 1.2 1.0 +25C 0.8 0.6 0.4 150C, 2 V 160 140 25C, 5 V 120 25C, 2 V 100 80 -55C, 5 V 60 -55C, 2 V 40 20 0 0.2 0 0.001 0.01 0.1 1 0.001 10 0.01 IC, COLLECTOR CURRENT (A) 300 150C, 5 V 150C, 5 V 150C, 2 V 100 25C, 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 160 25C, 5 V 80 60 -55C, 5 V 40 -55C, 2 V 10 Figure 2. DC Current Gain vs. Collector Current (BCP53) 180 120 1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 140 0.1 250 150C, 2 V 200 25C, 5 V 150 25C, 2 V 100 -55C, 5 V -55C, 2 V 50 20 0 0 0.001 0.1 1 0.001 10 1 Figure 3. DC Current Gain vs. Collector Current (BCP53-10) Figure 4. DC Current Gain vs. Collector Current (BCP53-16) IC/IB = 10 0.9 -55C 0.8 0.7 +25C 0.5 +150C 0.001 IC/IB = 10 0.1 1 10 BCP53 -16 1.1 1.0 0.9 -55C 0.8 0.7 +25C 0.6 0.5 +150C 0.4 0.01 10 1.2 BCP53, -10 1.0 0.4 0.1 IC, COLLECTOR CURRENT (A) 1.1 0.6 0.01 IC, COLLECTOR CURRENT (A) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. BCP53, -10 Base Emitter Saturation Voltage vs. Collector Current Figure 6. BCP53-16 Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 10 BCP53 Series TYPICAL CHARACTERISTICS 1.2 1.1 1.0 0.9 0.8 -55C 0.7 0.6 +25C 0.5 0.4 0.3 +150C 0.001 1.0 0.01 0.1 1.0 0.9 -55C 0.8 0.7 +25C 0.6 0.5 +150C 0.4 0.3 0.2 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. BCP53, -10 Base Emitter Turn-On Voltage vs. Collector Current VBE(on) Figure 8. BCP53-16 Base Emitter Turn-On Voltage vs. Collector Current IC = 1.0 A 110 IC = 1.5 A BCP53-10 100 0.8 IC = 500 mA 0.7 0.6 IC = 100 mA 0.5 0.4 0.3 90 BCP53 80 70 60 BCP53-16 0.2 50 0.1 0 40 0.001 0.01 0.1 0 1 1 2 4 VOLTAGE (V) Figure 9. BCP53, -10, -16 Saturation Region Figure 10. Input Capacitance 10 Ic, COLLECTOR CURRENT (A) 20 BCP53-10 15 BCP53 10 BCP53-16 5 3 Ib, BASE CURRENT (A) 25 CAPACITANCE (pF) BCP53 -16 Vce = 2 V 1.1 IC, COLLECTOR CURRENT (A) BCP53, -10, -16 0.9 1 CAPACITANCE (pF) Vce, COLLECTOR-EMITTER VOLTAGE (V) BCP53, -10 Vce = 2 V Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.2 0 5 100 ms 10 ms 1 ms 1s 1 CONTINUOUS THERMAL LIMIT 0.1 SINGLE PULSE TEST AT Tamb = 25C 0.01 0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Output Capacitance Figure 12. Standard Operating Area www.onsemi.com 4 100 BCP53 Series PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A q L MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 0 1.50 6.70 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 10 1.75 2.00 7.00 7.30 - STYLE 1: PIN 1. 2. 3. 4. L1 SOLDERING FOOTPRINT* MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0 0.060 0.264 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 10 0.078 0.287 BASE COLLECTOR EMITTER COLLECTOR 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BCP53T1/D