BAT46W BAT46W Surface Mount Schottky Barrier Diodes Schottky-Barrier-Dioden fur die Oberflachenmontage Version 2012-07-31 1 .1 0 .1 Type Code 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 100 V Plastic case - Kunststoffgehause 3.80.2 1 .60 .1 0.6 0.1 0 .1 2 Power dissipation - Verlustleistung 2.70.1 Dimensions - Mae [mm] SOD-123 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BAT46W Power dissipation - Verlustleistung Ptot 200 mW 1) Max. average forward current - Dauergrenzstrom (dc) IFAV 150 mA 1) Repetitive peak forward current - Periodischer Spitzenstrom IFRM 350 mA 1) IFSM 750 mA VRRM 100 V Tj TS -55...+125C -55...+150C Non repetitive peak forward surge current Stostrom-Grenzwert tp 10 ms Repetitive peak reverse voltage - Periodische Spitzensperrspannung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Forward voltage Durchlass-Spannung IF = 0.1 mA IF = 10 mA IF = 250 mA VF VF VF < 0.25 V < 0.45 V <1V Leakage current - Sperrstrom 2) VR VR VR VR = = = = 1.5 V 10 V 50 V 75 V IR IR IR IR < 0.5 A < 0.8 A < 2 A < 5 A = = = = 1.5 V 10 V 50 V 75 V IR IR IR IR < 5 A < 7.5 A < 15 A < 20 A CT CT typ. 20 pF typ. 12 pF RthA < 420 K/W 1) Leakage current - Sperrstrom 2) Tj = 60C VR VR VR VR Total capacitance Gesamtkapazitat f = 1 Mhz VR = 0 V VR = 1 V Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BAT46W Marking - Stempelung BAT46W = XH 1 120 [%] [A] 100 10-1 80 Tj = 125C 60 10 -2 40 Tj = 25C 10-3 20 IF IFAV 0 0 TA 50 100 150 [C] 10-4 Rated forward current versus ambient temperature1) Zul. Richtstrom in Abh. von der Umgebungstemp.1) 2 http://www.diotec.com/ 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) (c) Diotec Semiconductor AG