5962-8771002GA - Texas Instruments High-Performance Analog

LM158QML

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LM158QML Low Power Dual Operational Amplifiers

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ADVANTAGES

1FEATURES • Two Internally Compensated Op Amps

2• Available with Radiation Specification • Eliminates Need for Dual Supplies

– High Dose Rate 100 krad(Si) • Allows Direct Sensing Near Gnd and VOalso

– ELDRS Free 100 krad(Si) Goes to Gnd

• Internally Frequency Compensated for Unity • Compatible with all Forms of Logic

Gain • Power Drain Suitable for Battery Operation

• Large DC Voltage Gain: 100 dB

• Wide Bandwidth (Unity Gain): 1 MH DESCRIPTION

z(Temperature Compensated) The LM158 series consists of two independent, high

• Wide Power Supply Range: gain, internally frequency compensated operational

amplifiers which were designed specifically to operate

– Single Supply: 3V to 32V from a single power supply over a wide range of

– Or Dual Supplies: ±1.5V to ±16V voltages. Operation from split power supplies is also

• Very Low Supply Current Drain (500 μA) −possible and the low power supply current drain is

independent of the magnitude of the power supply

Essentially Independent of Supply Voltage voltage.

• Low Input Offset Voltage: 2 mV Application areas include transducer amplifiers, dc

• Input Common-mode Voltage Range Includes gain blocks and all the conventional op amp circuits

Ground which now can be more easily implemented in single

• Differential Input Voltage Range Equal to the power supply systems. For example, the LM158

Power Supply Voltage series can be directly operated off of the standard

• Large Output Voltage Swing: 0V to V+−1.5V +5V power supply voltage which is used in digital

systems and will easily provide the required interface

UNIQUE CHARACTERISTICS electronics without requiring the additional ±15V

power supplies.

• In the Linear Mode the Input Common-Mode

Voltage Range Includes Ground and the Output

Voltage can also Swing to Ground, even though

Operated from only a Single Power Supply

Voltage.

• The Unity Gain Cross Frequency is Temperature

Compensated.

• The Input Bias Current is also Temperature

Compensated.

1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

OUT A V+1 10

-IN A OUT B2 9

+IN A -IN B3 8

GND +IN B4 7

N/C N/C5 6

LM158QML

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Connection Diagrams

Figure 1. TO-99 Package

See Package Number LMC0008C

Top View Top View

Figure 2. CDIP Package Figure 3. 10 Lead CLGA Package

See Package Number NAB0008A See Package Number NAC0010A

Schematic Diagram

(Each Amplifier)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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Absolute Maximum Ratings(1)

Supply Voltage, V+32VDC

Differential Input Voltage 32VDC

Input Voltage −0.3VDC to +32VDC

Power Dissipation(2) 830 mW

Output Short-Circuit to GND(3) Continuous

(One Amplifier)

V+≤15VDC and TA= 25°C

Maximum Junction Temperature (TJmax) 150°C

Input Current (VI<−0.3V)(4) 50 mA

Operating Temperature Range −55°C ≤TA≤+125°C

Storage Temperature Range −65°C ≤TA≤+150°C

Lead Temperature (Soldering, 10 TO-99 300°C

seconds) CDIP 260°C

CLGA 260°C

Thermal θJA TO-99 (Still Air) 155°C/W

Resistance TO-99 (500LF/Min Air Flow) 80°C/W

CDIP (Still Air) 132°C/W

CDIP (500LF/Min Air Flow) 81°C/W

CLGA (Still Air) 195°C/W

CLGA (500LF/Min Air Flow) 131°C/W

θJC TO-99 42°C/W

CDIP 23°C/W

CLGA 33°C/W

Package Weight TO-99 1,000mg

CDIP 1,100mg

CLGA 220mg

ESD Tolerance(5) 250V

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the

Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may

degrade when the device is not operated under the listed test conditions.

(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),

θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any

temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.

(3) Short circuits from the output to V+can cause excessive heating and eventual destruction. When considering short circuits to ground,

the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,

continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result

from simultaneous shorts on all amplifiers.

(4) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of

the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is

also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to

the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and

normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3V (at 25°C).

(5) Human body model, 1.5 kΩin series with 100 pF.

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Quality Conformance Inspection

Mil-Std-883, Method 5005 - Group A

Subgroup Description Temp °C

1 Static tests at +25

2 Static tests at +125

3 Static tests at -55

4 Dynamic tests at +25

5 Dynamic tests at +125

6 Dynamic tests at -55

7 Functional tests at +25

8A Functional tests at +125

8B Functional tests at -55

9 Switching tests at +25

10 Switching tests at +125

11 Switching tests at -55

12 Settling time at +25

13 Settling time at +125

14 Settling time at -55

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LM158 Electrical Characteristics SMD 5962–8771001 DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Sub-

Parameter Test Conditions Notes Min Max Units groups

ICC Power Supply Current +VCC = 5V, RL= 100K, 1.2 mA 1, 2, 3

VO= 1.4V

+VCC = 30V, RL= 100K, 3.0 mA 1

VO= 1.4V 4.0 mA 2, 3

VOH Output Voltage High +VCC = 30V, RL= 2KΩ26 V 1, 2, 3

+VCC = 30V, RL= 10KΩ27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL= 10KΩ20 mV 1, 2, 3

+VCC = 30V, ISink = 1µA 20 mV 1, 2, 3

+VCC = 5V, RL= 10KΩ20 mV 1, 2, 3

ISink Output Sink Current +VCC = 15V, VO= 200mV, 12 µA 1

+VI= 0V, -VI= +65mV

+VCC = 15V, VO= 2V, 10 mA 1

+VI= 0V, -VI= +65mV 5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO= 2V, -20 mA 1

+VI= 0V, -VI= -65mV -10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO= 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -5.0 5.0 mV 1

RS= 50Ω, VO= 1.4V -7.0 7.0 mV 2, 3

+VCC = 30V, VCM = 28.5V, -5.0 5.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28V, -7.0 7.0 mV 2, 3

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, -5.0 5.0 mV 1

RS= 50Ω, VO= 1.4V -7.0 7.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS= 50Ω70 dB 1

VI= 0V to 28.5V,

±IIB Input BIas Current +VCC = 5V, VCM = 0V See(1) -150 -1.0 nA 1

See(1) -300 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -30 30 nA 1

-100 100 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V, 65 dB 1

VCM = 0V

VCM Common Mode Voltage Range +VCC = 30V See(2),(3) 28.5 V 1

See(2),(3) 28.0 V 2, 3

VDiff Differential Input Voltage See(4) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL= 2KΩ, 50 V/mV 4

VO= 1V to 11V 25 V/mV 5, 6

(1) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

(2) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The

upper end of the common-mode voltage range is V+−1.5V (at 25°C), but either or both inputs can go to +32V without damage,

independent of the magnitude of V+.

(3) Specified by input offset voltage.

(4) Specified parameter not tested.

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LM158A Electrical Characteristics SMD 5962–8771002, High Dose Rate DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Sub-

Parameter Test Conditions Notes Min Max Units groups

ICC Power Supply Current +VCC = 5V, RL= 100K, 1.2 mA 1, 2, 3

VO= 1.4V

+VCC = 30V, RL= 100K, 3.0 mA 1

VO= 1.4V 4.0 mA 2, 3

VOH Output Voltage High +VCC = 30V, RL= 2KΩ26 V 1, 2, 3

+VCC = 30V, RL= 10KΩ27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL= 10KΩ40 mV 1

100 mV 2, 3

+VCC = 30V, ISink = 1µA 40 mV 1

100 mV 2, 3

+VCC = 5V, RL= 10KΩ40 mV 1

100 mV 2, 3

ISink Output Sink Current +VCC = 15V, VO= 200mV, 12 µA 1

+VI= 0V, -VI= +65mV

+VCC = 15V, VO= 2V, 10 mA 1

+VI= 0V, -VI= +65mV 5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO= 2V, -20 mA 1

+VI= 0V, -VI= -65mV -10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO= 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V -4.0 4.0 mV 2, 3

+VCC = 30V, VCM = 28.5V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28V, -4.0 4.0 mV 2, 3

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V -4.0 4.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS= 50Ω70 dB 1

VI= 0V to 28.5V,

±IIB Input BIas Current +VCC = 5V, VCM = 0V See(1) -50 -1.0 nA 1

See(1) -100 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -10 10 nA 1

-30 30 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V, 65 dB 1

VCM = 0V

VCM Common Mode Voltage Range +VCC = 30V See(2) (3) 28.5 V 1

See(2) (3) 28.0 V 2, 3

VDiff Differential Input Voltage See (4) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL= 2KΩ, 50 V/mV 4

VO= 1V to 11V 25 V/mV 5, 6

(1) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

(2) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The

upper end of the common-mode voltage range is V+−1.5V (at 25°C), but either or both inputs can go to +32V without damage,

independent of the magnitude of V+.

(3) Specified by input offset voltage.

(4) Specified parameter not tested.

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SMD 5962–8771002, High Dose Rate

DC Drift Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Sub-

Parameter Test Conditions Notes Min Max Units groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28.5V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

±IIB Input Bias Current +VCC = 5V, VCM = 0V See(1) -10 10 nA 1

(1) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

SMD 5962–8771002, High Dose Rate SMD 5962–8771002, High Dose Rate

100K Post Radiation Limits @ +25°C(1)

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Parameter Test Conditions Notes Min Max Units Sub -

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28.5V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

±IIB Input Bias Current +VCC = 5V, VCM = 0V See(1)(2) -60 -1.0 nA 1

ICC Power Supply Current +VCC = 5V, RL= 100K, See(1) 1.5 mA 1

VO= 1.4V

(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post

Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate

sensitivity. Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, per

Test Method 1019, Condition A.

(2) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

LM158A Electrical Characteristics SMD 5962–8771003 ELDRS Free Only

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Sub-

Parameter Test Conditions Notes Min Max Units groups

ICC Power Supply Current +VCC = 5V, RL= 100K, 1.2 mA 1, 2, 3

VO= 1.4V

+VCC = 30V, RL= 100K, 3.0 mA 1,

VO= 1.4V 4.0 2, 3

VOH Output Voltage High +VCC = 30V, RL= 2KΩ26 V 1, 2, 3

+VCC = 30V, RL= 10KΩ27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL= 10KΩ40 mV 1

100 mV 2, 3

+VCC = 30V, ISink = 1µA 40 mV 1

100 mV 2, 3

+VCC = 5V, RL= 10KΩ40 mV 1

100 mV 2, 3

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LM158A Electrical Characteristics SMD 5962–8771003 ELDRS Free Only

DC Parameters (continued)

The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Sub-

Parameter Test Conditions Notes Min Max Units groups

ISink Output Sink Current +VCC = 15V, VO= 200mV, 12 µA 1

+VI= 0V, -VI= +65mV

+VCC = 15V, VO= 2V, 10 mA 1

+VI= 0V, -VI= +65mV 5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO= 2V, -20 mA 1

+VI= 0V, -VI= -65mV -10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO= 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V -4.0 4.0 mV 2, 3

+VCC = 30V, VCM = 28.5V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28V, -4.0 4.0 mV 2, 3

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, -2.0 2.0 mV 1

RS= 50Ω, VO= 1.4V -4.0 4.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS= 50Ω70 dB 1

VI= 0V to 28.5V,

±IIB Input BIas Current +VCC = 5V, VCM = 0V See(1) -50 -1.0 nA 1

See(1) -100 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -10 10 nA 1

-30 30 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V, 65 dB 1

VCM = 0V

VCM Common Mode Voltage Range +VCC = 30V See(2),(3) 28.5 V 1

See(2),(3) 28.0 V 2, 3

VDiff Differential Input Voltage See(4) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL= 2KΩ, 50 V/mV 4

VO= 1V to 11V 25 V/mV 5, 6

(1) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

(2) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The

upper end of the common-mode voltage range is V+−1.5V (at 25°C), but either or both inputs can go to +32V without damage,

independent of the magnitude of V+.

(3) Specified by input offset voltage.

(4) Specified parameter not tested.

SMD 5962–8771003 ELDRS Free Only

DC Drift Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Sub-

Parameter Test Conditions Notes Min Max Units groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28.5V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, -0.5 0.5 mV 1

RS= 50Ω, VO= 1.4V

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SMD 5962–8771003 ELDRS Free Only

DC Drift Parameters (continued)

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Sub-

Parameter Test Conditions Notes Min Max Units groups

±IIB Input Bias Current +VCC = 5V, VCM = 0V See(1) -10 10 nA 1

(1) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

SMD 5962–8771003 ELDRS Free Only

100K Post Radiation Limits @ +25°C(1)

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Parameter Test Conditions Notes Min Max Units Sub -

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 30V, VCM = 28.5V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

+VCC = 5V, VCM = 0V, See(1) -4.0 4.0 mV 1

RS= 50Ω, VO= 1.4V

±IIB Input Bias Current +VCC = 5V, VCM = 0V See(1)(2) -60 -1.0 nA 1

(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post

Radiation Limits Table. These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a

wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS).

(2) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the

state of the output so no loading change exists on the input lines.

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Typical Performance Characteristics

Input Voltage Range Input Current

Figure 4. Figure 5.

Supply Current Voltage Gain

Figure 6. Figure 7.

Open Loop Frequency Response Common-Mode Rejection Ratio

Figure 8. Figure 9.

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Typical Performance Characteristics (continued)

Voltage Follower Pulse Response Voltage Follower Pulse Response (Small Signal)

Figure 10. Figure 11.

Large Signal Frequency Response Output Characteristics Current Sourcing

Figure 12. Figure 13.

Output Characteristics Current Sinking Current Limiting

Figure 14. Figure 15.

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APPLICATION HINTS

The LM158 series are op amps which operate with only a single power supply voltage, have true-differential

inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These amplifiers operate

over a wide range of power supply voltage with little change in performance characteristics. At 25°C amplifier

operation is possible down to a minimum supply voltage of 2.3 VDC.

Precautions should be taken to insure that the power supply for the integrated circuit never becomes reversed in

polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited current surge

through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a

destroyed unit.

Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes

are not needed, no large input currents result from large differential input voltages. The differential input voltage

may be larger than V+without damaging the device. Protection should be provided to prevent the input voltages

from going negative more than −0.3 VDC (at 25°C). An input clamp diode with a resistor to the IC input terminal

can be used.

To reduce the power supply current drain, the amplifiers have a class A output stage for small signal levels which

converts to class B in a large signal mode. This allows the amplifiers to both source and sink large output

currents. Therefore both NPN and PNP external current boost transistors can be used to extend the power

capability of the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to

bias the on-chip vertical PNP transistor for output current sinking applications.

For ac applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be

used, from the output of the amplifier to ground to increase the class A bias current and prevent crossover

distortion. Where the load is directly coupled, as in dc applications, there is no crossover distortion.

Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values

of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop

gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier.

The bias network of the LM158 establishes a drain current which is independent of the magnitude of the power

supply voltage over the range of 3 VDC to 30 VDC.

Output short circuits either to ground or to the positive power supply should be of short time duration. Units can

be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase

in IC chip dissipation which will cause eventual failure due to excessive junction temperatures. Putting direct

short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive

levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the

amplifiers. The larger value of output source current which is available at 25°C provides a larger output current

capability at elevated temperatures (see Typical Performance Characteristics) than a standard IC op amp.

The circuits presented in the section on typical applications emphasize operation on only a single power supply

voltage. If complementary power supplies are available, all of the standard op amp circuits can be used. In

general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and below this

value in single power supply systems. Many application circuits are shown which take advantage of the wide

input common-mode voltage range which includes ground. In most cases, input biasing is not required and input

voltages which range to ground can easily be accommodated.

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Typical Single-Supply Applications

(V+= 5.0 VDC)

*R not needed due to temperature independent IIN

Figure 16. Non-Inverting DC Gain (0V Output)

VO= 0 VDC for VIN = 0 VDC

AV= 10

Where: VO= V1+ V2−V3−V4

(V1+ V2)≥(V3+ V4) to keep VO> 0 VDC

Figure 17. DC Summing Amplifier Figure 18. Power Amplifier

(VIN'S ≥0 VDC and VO≥0 VDC)

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fo= 1 kHz

Q = 50

Av= 100 (40 dB) Figure 19. “BI-QUAD” RC Active Bandpass Filter

Figure 20. Fixed Current Sources Figure 21. Lamp Driver

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*(Increase R1 for ILsmall)

VL≤V+−2V

Figure 22. LED Driver Figure 23. Current Monitor

VO= VIN

Figure 24. Driving TTL Figure 25. Voltage Follower

Figure 26. Pulse Generator

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Figure 27. Squarewave Oscillator Figure 28. Pulse Generator

HIGH ZIN

LOW ZOUT Figure 29. Low Drift Peak Detector

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SNOSAP3F –JULY 2005–REVISED MARCH 2013

IO= 1 amp/volt VIN

(Increase REfor IOsmall)

Figure 30. High Compliance Current Sink Figure 31. Comparator with Hysteresis

*WIDE CONTROL VOLTAGE RANGE: 0 VDC ≤VC≤2 (V+−1.5V DC)

Figure 32. Voltage Controlled Oscillator (VCO)

Figure 33. AC Coupled Inverting Amplifier

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SNOSAP3F –JULY 2005–REVISED MARCH 2013

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Figure 34. Ground Referencing a Differential Input Signal

Av= 11 (As Shown) Figure 35. AC Coupled Non-Inverting Amplifier

fo= 1 kHz

Q = 1

AV= 2 Figure 36. DC Coupled Low-Pass RC Active Filter

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