This product complies with the RoHS Directive (EU 2002/95/EC). DRA3144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3144T DRA9144T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SSSMini3-F2-B Pin Name 1: Base 2: Emitter 3: Collector Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) Marking Symbol: LP Absolute Maximum Ratings Ta = 25C Parameter Internal Connection Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -100 mA Total power dissipation PT 100 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C B C R1 E Resistance value R1 47 k Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 - 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 - 0.5 A Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 - 0.01 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 460 - 0.25 V Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = - 0.5 mA Input voltage (ON) VI(on) VCE = - 0.2 V, IC = -5 mA Input voltage (OFF) VI(off) VCE = -5 V, IC = -100 A Input resistance R1 160 -2.8 -30% V 47 - 0.4 V +30% k Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2010 Ver. CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DRA3144T DRA3144T_IC-VCE DRA3144T_PT-Ta PT Ta DRA3144T_hFE-IC IC VCE hFE IC -120 125 500 VCE = -10 V 50 25 -80 -500 A -400 A -60 -300 A -40 -200 A -20 40 80 120 160 0 200 Ambient temperature Ta (C) 0 -2 Output current IO (mA) Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 20 -30C 100 0 - 0.1 -12 -1 Ta = 85C -30C -10 DRA3144T_IO-VIN DRA3144T_VIN-IO -100 VIN IO -100 VO = -5 V VO = - 0.2 V Ta = 85C -1 25C -30C -10-1 -10-2 -10 -30C -1 25C Ta = 85C 25C -1 -10 Collector current IC (mA) 2 -10 25C 200 IO VIN -1 - 0.01 - 0.1 -8 Ta = 85C 300 Collector current IC (mA) VCE(sat) IC - 0.1 -6 400 Collector-emitter voltage VCE (V) DRA3144T_VCEsat-IC -10 -4 Input voltage VIN (V) 0 -100 A Forward current transfer ratio hFE 75 0 IB = -600 A -100 100 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25C -100 -10-3 0 - 0.5 -1.0 -1.5 Input voltage VIN (V) Ver. CED -2.0 - 0.1 - 0.1 -1 -10 Output current IO (mA) -100 This product complies with the RoHS Directive (EU 2002/95/EC). DRA3144T SSSMini3-F2-B Unit: mm 0.20 0.05 1.20 0.05 +0.05 0.30 -0.02 (5) 1.20 0.05 0.80 0.05 3 2 1 +0.05 0.20 -0.02 (0.4) +0.05 0.13 -0.02 (0.4) (0.27) 0.80 0.05 0 to 0.05 0.52 0.03 (5) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. 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Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. 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