COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of
a N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
The ALD1115 offers high input impedance and negative current
temperature coefficient. The transistor pair is designed for precision
signal switching and amplifying applications in +1V to +12V systems
where low input bias current, low input capacitance and fast switching
speed are desired. Since these are MOSFET devices, they feature very
large (almost infinite) current gain in a low frequency, or near DC,
operating environment. When connected in parallel with sources, drains
and gates connected together, a CMOS analog switch can be constructed.
In addition, the ALD1115 is intended as a building block for CMOS
inverters, differential amplifier input stages, transmission gates, and
multiplexer applications.
The ALD1115 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which
is specified at 30pA at room temperature. V+ is connected to the
substrate, which is the most positive voltage potential of the ALD1115,
usually SP(5). Similarly, V- is connected to the most negative voltage
potential of the ALD1115, usually SN (1).
FEATURES
• Thermal tracking between N-channel and P-channel
• Low threshold voltage of 0.7V for both N-channel
and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-channel MOSFET and single P-channel
MOSFET in one package
ALD1115
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
PIN CONFIGURATION
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers
BLOCK DIAGRAM
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C0°C to +70°C
8-Pin 8-Pin 8-Pin 8-Pin
CERDIP MSOP Plastic Dip SOIC
Package Package Package Package
ALD1115 DA ALD1115 PA ALD1115 SA
ALD1115 MAL ALD1115PAL ALD1115 SAL
* Contact factory for industrial temperature range.
ORDERING INFORMATION ("L"suffix for lead free version)
© 2006 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 T el: (408) 747-1 155 Fax: (408) 747-1286 http://www .aldinc.com
GP
SP
GN
SN 1
2
3
4
DA, MA, PA, SA PACKAGE
5
DN
V
+
V
-
DP
6
7
8
N SOURCE 1 (1)
V- (4)
N DRAIN 1 (3)
N GATE 1 (2)
P SOURCE 1 (5)
V+ (8)
P DRAIN 1 (7)
P GATE 1 (6)
ALD1115 Advanced Linear Devices 2
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS 13.2V
Gate-source voltage, VGS 13.2V
Power dissipation 500 mW
Operating temperature range PA, SA package 0°C to +70°C
DA package -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
Gate Threshold VT0.4 0.7 1.0 V IDS = 1µA VGS = VDS -0.4 -0.7 -1.0 V IDS = -1µA VGS = VDS
Voltage
Gate Threshold
Temperature TCVT -1.2 mV/°C -1.3 mV/°C
Drift
On Drain IDS (ON) 3 4.8 mA VGS = VDS = 5V -1.3 -2 mA VGS = VDS = -5V
Current
Trans-. Gfs 1 1.8 mmho VDS = 5V IDS= 10mA 0.25 0.67 mmho VDS = -5V IDS= -10mA
conductance
Output GOS 200 µmho VDS = 5V IDS = 10mA 40 µmho VDS = -5V IDS = -10mA
Conductance
Drain Source RDS(ON) 350 500 ΩVDS = 0.1V VGS = 5V 1200 1800 ΩVDS = -0.1V VGS = -5V
ON Resistance
Drain Source BV DSS 12 V IDS = 1µA VGS =0V -12 V IDS = -1µA VGS =0V
Breakdown
Voltage
Off Drain IDS(OFF) 10 400 pA VDS =12V IGS = 0V 10 400 pA VDS = -12V VGS = 0V
Current 4 nA TA = 125°C4nAT
A
= 125°C
Gate Leakage IGSS 0.1 30 pA VDS = 0V VGS =12V 1 30 pA VDS = 0V VGS =-12V
Current 1 nA TA = 125°C1nAT
A
= 125°C
Input CISS 1 3 pF 1 3 pF
Capacitance
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
N - Channel Test P - Channel Test
Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions
ALD1115 Advanced Linear Devices 3
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE CURRENT
(mA)
-10
-7.5
-5.0
-2.5
0
V
BS
= 0V
T
A
= 25°C
-10V
-8V
-6V
-4V
-2V
0-8-2 -6-4 -10 -12
V
GS
= -12V
LOW VOLTAGE OUTPUT 
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT
(µA)
-320 -160 0 160 320
-500
500
250
0
-250
-4V
V
GS
= -12V
-6V
V
BS
= 0V
T
A
= 25°C
-2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
0-8-2 -6-4 -10
FORWARD TRANSCONDUCTANCE
(mmho)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
T
A
= +125°C
T
A
= +25°C
I
DS
= -1mA
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE SOURCE VOLTAGE (V)
0 -0.8 -1.6 -2.4 -3.2 -4.0
-20
-15
-10
-5
0
DRAIN SOURCE CURRENT
(µA)
V
BS
= 0V
4V
6V
8V
10V
12V
V
GS
= V
DS
T
A
= 25°C
2V
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE 
(KΩ)
100
10
1
0.1 -20 -4 -6 -8 -10 -12
V
DS
= 0.4V
V
BS
= 0V
T
A
= +125°C
T
A
= +25°C
OFF DRAIN CURRENT vs. 
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
OFF DRAIN SOURCE CURRENT
(pA)
-50 -25 +25 +50 +75 +125+1000
V
DS
= -12V
V
GS
= V
BS
= 0V
1
10
100
1000
ALD1115 Advanced Linear Devices 4
N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT 
(mA)
20
15
10
0
5
V
BS
= 0V
T
A
= 25°C
V
GS
= 12V
10V
8V
6V
4V
2V
DRAIN SOURCE VOLTAGE (V)
024 681012
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT
(µA)
-160 -80 0 80 160
-1000
1000
500
0
-500
4V
V
GS
= 12V
6V
V
BS
= 0V
T
A
= 25°C
2V
FORWARD TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE 
vs. DRAIN SOURCE VOLTAGE 
DRAIN SOURCE VOLTAGE (V)
20
10
2
1
0.5
5
0.2
024681012
I
DS
= 1mA
T
A
= +25°C
I
DS
= 10mA
T
A
= +125°C
V
BS
= 0V
f = 1KHz
GATE SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT
(µA)
20
15
10
5
00 0.8 1.6 2.4 3.2 4.0

V
BS
= 0V -2V -4V-6V -8V
-10V
-12V
V
GS
= V
DS
T
A
= 25°C
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE 
(KΩ)
100
10
1
0.1 20 4 6 8 10 12
V
DS
= 0.2V
V
BS
= 0V
T
A
= +25°C
T
A
= +125°C
OFF DRAIN CURRENT vs. 
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
OFF DRAIN SOURCE CURRENT
(pA)
-50 -25 +25 +50 +75 +125+1000
V
DS
= +12V
V
GS
= V
BS
= 0V
1
10
100
1000
ALD1115 Advanced Linear Devices 5
CMOS INVERTER CMOS ANALOG SWITCH
CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL
TYPICAL APPLICATIONS
I
SET
R
SET
Q
3
V+ = +5V
I
SOURCE
Q
1
, Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
I
SOURCE
= I
SET
= V+ -Vt
R
SET
= 4
R
SET
~
Q
1
Q
2
V+ = +5V
Q
4
V+ = +5V
Q
4
I
SOURCE
R
SET
Q
1
Q
3
I
SET
ON
OFF
Digital Logic Control
of Current Source
Q
1
: N - Channel MOSFET
Q
3,
Q
4
: P - Channel MOSFET
V+
IN OUT
CONTROL
CONTROL
V+
IN OUT
ALD1115 Advanced Linear Devices 6
CASCODE CURRENT SOURCES
SOURCE FOLLOWER
DIODE-CONNECTED CONFIGURATION
TYPICAL APPLICATIONS
I
SET
V+ = +5V
Q
2
I
SOURCE
R
SET
Q
3
Q
1
Q
1
, Q
2
, Q
3
, Q
4
: N - Channel MOSFET
Q
4
I
SET
V+ = +5V
Q
1
Q
3
Q
2
Q
4
I
SOURCE
Q1, Q2, Q3, Q4: P - Channel MOSFET
I
SOURCE
= I
SET
= V+ - 2Vt
R
SET
= 3
R
SET
~
R
SET
OUT
IN
RARB
V+
V
+
V
OUT =
V
+ -
V
DS
R
V
OUT =
V
DS
R
V
+