BT134-600E
4Q Triac
Rev.01 - 27 April 2018 Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT82 (SIP3) plastic package intended
for use in general purpose bidirectional switching and phase control applications.This "series E"
sensitive gate triac is intended to be interfaced directly to microcontrollers, logic integrated circuits
and other low power gate trigger circuits.
2. Features and benets
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate
• Triggering in all four quadrants
• Direct interfacing to logic level ICs
• Direct interfacing to low power gate drive circuits
• Low holding current for low current loads and lowest EMI at commutation
• Compact package
3. Applications
• General purpose low power motor control
• Home appliances
• Industrial process control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
VDRM repetitive peak o-state
voltage
600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
4 A
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
25 A
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 2.5 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 5 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 11 25 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA
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4Q Triac
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5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 T1 main terminal 1
sym051
T1
G
T2
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main terminal 2
Type number Package
Name Description Version
BT134-600E SIP3 plastic single-ended package; 3-leads (in-line) SOT82
Table 3. Ordering information
7. Marking
Type number Marking codes
BT134-600E BT134-600E
Table 4. Marking codes
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4Q Triac
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8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
VDRM repetitive peak o-state
voltage
600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig 1; Fig 2; Fig 3 4 A
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig 4; Fig 5
25 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms 27 A
I2t I2t for fusing tP = 10 ms; SIN 3.1 A2s
dIT/dt rate of rise of on-state
current
IG = 20 mA; T2+ G+ 50 A/μs
IG = 20 mA; T2+ G- 50 A/μs
IG = 20 mA; T2- G- 50 A/μs
IG = 50 mA; T2- G+ 10 A/μs
IGM peak gate current 2 A
PGM peak gate power 5 W
PG(AV) average gate power over any 20 ms period 0.5 W
Tstg storage temperature -40 to 150 °C
Tj junction temperature 125 °C
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f = 50 Hz; Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
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tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
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9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
half cycle; Fig 6 - - 3.7 K/W
full cycle; Fig 6 - - 3 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air - 100 - K/W
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
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10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- 2.5 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- 5 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
- 11 25 mA
IL latching current VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
- 3 15 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
- 10 20 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
- 2.5 15 mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
- 4 20 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA
VT on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
- 0.7 1 V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V
ID o-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of o-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
- 50 - V/μs
tgt gate-controlled turn-on
time
VD = 600 V; ITM = 6 A; IG = 0.1 A;
dIG/dt = 5 A/μs
- 2 - μs
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Fig. 9. Normalized holding current as a function of
junction temperature
Vo = 1.27 V; Rs = 0.091 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
Fig. 8. Normalized latching current as a function of
junction temperature
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
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Fig. 11. Normalized gate trigger voltage as a function of junction temperature
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11. Package outline
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4Q Triac
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12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
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[short] data
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Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
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preliminary specification.
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[short] data
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specification.
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]P
WeEn Semiconductors BT134-600E
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13. Contents
1. General description .......................................................1
2. Features and benets ...................................................1
3. Applications ...................................................................1
4. Quick reference data ..................................................... 1
5. Pinning information .......................................................2
6. Ordering information .....................................................2
7. Marking ...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics ................................................6
10. Characteristics.............................................................7
11. Package outline .........................................................10
12. Legal information ...................................................... 11
13. Contents ..................................................................... 13
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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Date of release: 27 April 2018
