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07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP0104
VP0106
VP0109
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 Die†
-40V 8.0Ω-0.5A VP0104N3 —
-60V 8.0Ω-0.5A VP0106N3 —
-90V 8.0Ω-0.5A VP0109N3 VP0109ND
TO-92
Ordering Information
S G D
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
2
90%
10%
90%
90%
10% 10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Switching Waveforms and Test Circuit
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 -0.25A -0.8A 1.0W 125 170 -0.25A -0.8A
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics VP0104/VP0106/VP0109
Symbol Parameter Min Typ Max Unit Conditions
VP0109 -90
VP0106 -60
VP0104 -40
VGS(th) Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA
∆VGS(th) Change in VGS(th) with Temperature 5.8 6.5 mV/°CI
D = -1.0mA, VGS = VDS
IGSS Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 µAV
GS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -0.15 -0.25 VGS = -5V, VDS = -25V
-0.50 -1.2 VGS = -10V, VDS = -25V
RDS(ON) 11 15 VGS = -5V, ID = -0.1A
6.0 8.0 VGS = -10V, ID = -0.5A
∆RDS(ON) Change in RDS(ON) with Temperature 0.55 1.0 %/°CV
GS = -10V, ID = -0.5A
GFS Forward Transconductance 150 190 m VDS = -25V, ID = -0.5A
CISS Input Capacitance 45 60
COSS Common Source Output Capacitance 22 30 pF
CRSS Reverse Transfer Capacitance 3 8
td(ON) Turn-ON Delay Time 4 6
trRise Time 3 10
td(OFF) Turn-OFF Delay Time 8 12
tfFall Time 4 10
VSD Diode Forward Voltage Drop -1.2 -2.0 V ISD = -1.0A, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = -1.0A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VI
D = -1.0mA, VGS = 0V
-1 mA
A
VGS = 0V, VDS = -25V
f = 1 MHz
Static Drain-to-Source
ON-State Resistance
BVDSS Drain-to-Source
Breakdown Voltage
VDD = -25V
ns ID = -0.5A
RGEN = 25Ω
Electrical Characteristics (@ 25°C unless otherwise specified)
Ω
Ω
3
Typical Performance Curves
VP0104/VP0106/VP0109
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
VDS (volts)
ID (amperes)
ID (amperes)
D
Saturation Characteristics
0-2-4-6 -10-8
VDS (volts)
Maximum Rated Safe Operating Area
-0.1 -100-10-1.0
-0.1
-1.0
-10
-0.01
VDS (volts)
ID (amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp (seconds)
Transconductance vs. Drain Current
250
200
150
100
50
00 -1.0-0.2 -0.4 -0.6 -0.8
GFS (millisiemens)
ID (amperes)
Power Dissipation vs. Case Temperature
0 15010050
2.0
1257525 TC (°C)
PD (watts)
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
VDS
= -25V
TO-92
0 -10 -20 -30 -50-40
VGS
= -10V
-6V
-8V
-4V
TO-92(DC)
TC = 25°C
-1.0
-0.8
-0.6
-0.4
-0.2
0
VGS
= -10V
-6V
-4V
-8V
0
TO-92
P
D
= 1W
T
C
= 25°C
1.0
0
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
07/08/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VP0104/VP0106/VP0109
Typical Performance Curves
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS (volts)
Tj (°C)
VGS(th) (normalized)
V(th) and RDS Variation with Temperature
On-Resistance vs. Drain Current
RDS(ON) (ohms)
DSS
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
0 -10 -20 -30 -40
0-2-4-6-8-10
-50 0 50 100 150
1.10
1.06
1.02
0.98
0.94
0.90
1.6
1.4
1.2
1.0
0.8
-50 0 50 100 150
-1.0
-0.8
-0.6
-0.4
-0.2
V
DS
= -25V
T
A
= -55
°C
T
A
= 25
°C
T
A
= 125
°C
f = 1MHz
CISS
COSS
CRSS
-10
-8
-6
-4
-2
0.2 0.4 0.6 0.8 1.00
70 pF
VDS
=
-40V
VDS
= -10V
45pF
50
40
30
20
10
0 -1.5-0.3 -0.6 -0.9 -1.2
V
GS
= -5V
V
GS
= -10V
0
0
0
V
(th)
@ -1.0mA
R
DS(ON)
@ -10V, -0.5A
R
DS(ON)
@ -5V, 0.1A
1.6
1.4
1.2
1.0
0.8
0.6
70 pF
RDS(ON) (normalized)
