TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ T A = 250C @ T C = 250C(1) Total Power Dissipation Operating & Storage Junction Temperature Range PT 2N6676 2N6691 300 450 450 2N6678 2N6693 400 650 650 8.0 5.0 15 2N6676 2N6678 6.0(2) 175 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6691 2N6693 3.0(3) 175 T op; T stg -65 to +200 Symbol Max. 2N6676, 2N6678 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) 2) 3) RJC Unit 2N6691, 2N6693 TO-61* 0 1.0 C/W Derate linearly 1.0 W/0C for T C > 250C Derate linearly 34.2 mW/0C for T A > 250C Derate linearly 17.1 mW/0C for T A > 250C * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6676, 2N6691 2N6678, 2N6693 V(BR)CEO 300 400 2N6676, 2N6691 2N6678, 2N6693 ICEX Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = 1.5 Vdc VCE = 650 Vdc, VBE = 1.5 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 0.1 0.1 mAdc 120101 Page 1 of 2 2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Cutoff Current VEB = 8.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc Symbol Min. IEBO 2N6676, 2N6691 2N6678, 2N6693 Max. 2.0 ICBO 1.0 1.0 Unit mAdc mAdc ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 1.0 Adc; VCE = 3.0 Vdc IC = 15 Adc; VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 15 Adc; IB = 3.0 Adc Base-Emitter Saturation Voltage IC = 15 Adc; IB = 3.0 Adc hFE 15 8.0 40 20 VCE(sat) 1.0 Vdc VBE(sat) 1.5 Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc; VCE = 10 Vdc, f = 5 MHz Output Capacitance VCB = 10 Vdc; IE = 0, 100 kHz f 1.0 MHz hfe 3.0 10 Cobo 150 500 pF 0.1 0.6 2.5 0.5 0.5 s s s s s SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cross-Over Time t d r t s t f t c t See Figure 3 of MIL-PRF-19500/538 SAFE OPERATING AREA DC Tests T C = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 11.7 Vdc, IC = 15 Adc All Types Test 2 VCE = 30 Vdc, IC = 5.9 Adc 2N6676, 2N6678 Test 3 VCE = 100 Vdc, IC = 0.25 Adc All Types Test 4 VCE = 25 Vdc, IC = 7.0 Adc 2N6691, 2N6693 Test 5 VCE = 300 Vdc, IC = 20 mAdc 2N6676, 2N6691 VCE = 400 Vdc, IC = 10 mAdc 2N6678, 2N6693 Clamped Switching TA = 250C; VCC = 15 Vdc IC = 15 Adc; Clamped Voltage = 350 Vdc 2N6676, 2N6691 IC = 15 Adc; Clamped Voltage = 450 Vdc 2N6678, 2N6693 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2