MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM 190 171 57 0.25 57 0.25 Dimensions in mm 6 - M8 NUTS 57 0.25 C C C E E E C 20 G E C CM E C E E 124 0.25 140 C 40 C E CIRCUIT DIAGRAM G 20.25 8 - 7MOUNTING HOLES 41.25 79.4 15 61.5 61.5 40 13 28 5 38 5.2 LABEL 29.5 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1200HB-50H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions Ratings Unit -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 2500 20 1200 2400 1200 2400 15600 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 V V A A A A W C C V N*m N*m N*m kg VGE = 0V VCE = 0V DC, TC = 110C Pulse (Note 1) Pulse TC = 25C, IGBT part (Note 1) ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance ICES Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min -- Limits Typ -- Max 15 IC = 120mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 1200A, VGE = 15V Tj = 125C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.80 3.15 180 19.8 6.0 8.1 -- -- -- -- 2.50 -- 350 -- -- 0.006 0.5 3.64 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.25 1.20 -- 0.008 0.016 -- A Item Conditions (Note 4) VCE = 10V VGE = 0V VCC = 1250V, IC = 1200A, VGE = 15V VCC = 1250V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 1) Unit mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE=10V VGE=20V VGE=9V 800 400 VGE=8V 1600 1200 VGE=7V 0 2 4 6 8 VCE=10V 2000 800 400 0 10 Tj = 25C Tj = 125C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=15V VGE=11V 1200 0 VGE=15V 4 3 2 1 Tj = 25C Tj = 125C 0 EMITTER-COLLECTOR VOLTAGE VEC (V) VGE=12V 2000 VGE=14V 1600 2400 VGE=13V Tj=25C 0 400 800 1200 1600 2000 2400 8 IC = 2400A 6 IC = 1200A 4 2 IC = 480A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 4 3 2 1 Tj = 25C Tj = 125C 0 Tj = 25C COLLECTOR CURRENT IC (A) 5 0 10 0 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 2400 400 800 1200 1600 2000 2400 103 7 5 3 2 Cies 102 7 5 3 2 Coes 101 7 5 Cres VGE = 0V, Tj = 25C 3 2 Cies, Coes : f = 100kHz : f = 1MHz Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1200HB-50H SWITCHING ENERGY (J/P) td(off) 100 7 5 td(on) tr tf 3 2 10-1 7 5 REVERSE RECOVERY TIME trr (s) 3 2 VCC = 1250V, VGE = 15V RG = 1.6, Tj = 125C Inductive load 5 7 102 2 3 5 7 103 2 3 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 1.6 2 103 7 5 3 2 100 7 5 5 3 2 trr 5 7 102 2 3 5 7 103 2 3 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1250V, VGE = 15V, RG = 1.6, Tj = 125C, 2.5 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.0 Eon Eoff 1.5 1.0 Erec 0.5 0 0 400 800 2.5 2.0 1.5 1.0 0.5 0 1200 1600 2000 2400 5 10 15 20 25 GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 1250V IC = 1200A 16 12 8 4 0 0 CURRENT (A) 101 7 5 3 2 20 GATE-EMITTER VOLTAGE VGE (V) Irr 101 7 5 SWITCHING ENERGY (J/P) SWITCHING TIMES (s) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 0 5000 10000 15000 20000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 30 Single Pulse TC = 25C Rth(j - c)Q = 0.008K/ W Rth(j - c)R = 0.016K/ W 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 GATE CHARGE QG (nC) TIME (s) Mar. 2003 http://store.iiic.cc/